M. Foisy

735 total citations
31 papers, 458 citations indexed

About

M. Foisy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Foisy has authored 31 papers receiving a total of 458 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in M. Foisy's work include Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). M. Foisy is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). M. Foisy collaborates with scholars based in United States, Taiwan and Netherlands. M. Foisy's co-authors include L.F. Eastman, P.J. Tasker, Colin C. McAndrew, J.A. Seitchik, S. Moinian, L.D. Nguyen, Derek F. Bowers, Martin L. Dunn, L. Wagner and James R. Parker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

M. Foisy

27 papers receiving 424 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Foisy United States 9 443 172 63 34 27 31 458
D.C. D’Avanzo United States 12 355 0.8× 126 0.7× 41 0.7× 45 1.3× 13 0.5× 24 374
Y. Yamane Japan 14 452 1.0× 157 0.9× 29 0.5× 45 1.3× 23 0.9× 62 472
Jun-Yao Yang United States 8 277 0.6× 82 0.5× 61 1.0× 49 1.4× 19 0.7× 32 315
John J. Pekarik United States 15 812 1.8× 179 1.0× 92 1.5× 32 0.9× 40 1.5× 53 853
Ernesto Perea United States 9 290 0.7× 138 0.8× 37 0.6× 22 0.6× 33 1.2× 15 337
R.B. Nubling United States 9 284 0.6× 89 0.5× 75 1.2× 26 0.8× 15 0.6× 34 297
A. Higashisaka Japan 9 299 0.7× 94 0.5× 60 1.0× 48 1.4× 11 0.4× 39 321
J. Gering United States 11 287 0.6× 163 0.9× 35 0.6× 47 1.4× 12 0.4× 26 311
M. Versleijen Netherlands 5 450 1.0× 55 0.3× 42 0.7× 54 1.6× 30 1.1× 12 463
I. Post United Kingdom 9 354 0.8× 89 0.5× 30 0.5× 7 0.2× 33 1.2× 20 360

Countries citing papers authored by M. Foisy

Since Specialization
Citations

This map shows the geographic impact of M. Foisy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Foisy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Foisy more than expected).

Fields of papers citing papers by M. Foisy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Foisy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Foisy. The network helps show where M. Foisy may publish in the future.

Co-authorship network of co-authors of M. Foisy

This figure shows the co-authorship network connecting the top 25 collaborators of M. Foisy. A scholar is included among the top collaborators of M. Foisy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Foisy. M. Foisy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Fan, Xiaofeng, et al.. (2007). Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa. IEEE Transactions on Electron Devices. 54(2). 291–296. 14 indexed citations
3.
4.
Grudowski, Piotr, V. Dhandapani, Stefan Zollner, et al.. (2007). An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing. 17–18. 4 indexed citations
5.
Tekleab, D., et al.. (2006). Stress Sensitivity of PMOSFET Under High Mechanical Stress. 26. 119–122. 1 indexed citations
6.
Tekleab, D., B. Winstead, Piotr Grudowski, et al.. (2006). Multi-Layer Model for Stressor Film Deposition. 123–126. 7 indexed citations
7.
8.
Lyumkis, E., et al.. (2002). SOI related simulation challenges with moment based BTE solvers. 241–244. 4 indexed citations
9.
10.
Connelly, Daniel & M. Foisy. (2002). Improved device technology evaluation and optimization. 155–158. 5 indexed citations
11.
Jiang, Z. X., et al.. (2001). Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1133–1137. 1 indexed citations
12.
Mahaffy, Rachel, et al.. (2000). Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 560–565. 4 indexed citations
13.
Das, Arindam, et al.. (1998). Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFETs. 189–193. 3 indexed citations
14.
Zurek, Stan, Robert B. Darling, Kelin J. Kuhn, & M. Foisy. (1998). Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFETs. IEEE Transactions on Electron Devices. 45(1). 2–8. 6 indexed citations
15.
Foisy, M., et al.. (1991). Modeling of short-pulse threshold voltage shifts due to DX centers in Al/sub x/Ga/sub 1-x/As/GaAs and Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFET's. IEEE Transactions on Electron Devices. 38(6). 1238–1245. 1 indexed citations
16.
Nguyen, L.D., D.C. Radulescu, M. Foisy, P.J. Tasker, & L.F. Eastman. (1989). Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs. IEEE Transactions on Electron Devices. 36(5). 833–838. 53 indexed citations
17.
Nguyen, L.D., et al.. (1988). Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor. IEEE Transactions on Electron Devices. 35(2). 139–144. 36 indexed citations
18.
Foisy, M., P.J. Tasker, B. Hughes, & L.F. Eastman. (1988). The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET. IEEE Transactions on Electron Devices. 35(7). 871–878. 54 indexed citations
19.
Schaff, W. J., et al.. (1987). IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's. IEEE Transactions on Electron Devices. 34(11). 2357–2357. 2 indexed citations
20.
Radulescu, D.C., et al.. (1987). IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers. IEEE Transactions on Electron Devices. 34(11). 2356–2357. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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