H.I. Hanafi

937 citations

20 papers · 676 indexed · h-index 8

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 20
- Semiconductor materials and devices 18
- Advancements in Semiconductor Devices and Circuit Design 13
- Low-power high-performance VLSI design 4
- Silicon Carbide Semiconductor Technologies 4
- Ferroelectric and Negative Capacitance Devices 3
- Advanced Memory and Neural Computing 3
- Integrated Circuits and Semiconductor Failure Analysis 2
Materials Chemistry 4
- Electronic and Structural Properties of Oxides 3

Co-authors: S. Tiwari Imran Ullah Khan Farhan Rana K. Chan D. A. Buchanan Wei Liat Chan Y. T. Lii Kody Varahramyan
Journals: IEEE Journal of Solid-State Circuits (3 papers)IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Applied Physics Letters (1 paper)European Solid-State Circuits Conference (1 paper)
Partner nations: United States Hungary France

In The Last Decade

H.I. Hanafi

19 papers receiving 651 citations

Peers

Countries citing papers authored by H.I. Hanafi

Since Specialization

Citations

This map shows the geographic impact of H.I. Hanafi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.I. Hanafi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.I. Hanafi more than expected).

Fields of papers citing papers by H.I. Hanafi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.I. Hanafi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.I. Hanafi. The network helps show where H.I. Hanafi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H.I. Hanafi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H.I. Hanafi Line = papers co-authored together H.I. Hanafi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Off-State Current and Performance Analysis for Double-Gate CMOS With Non-Self-Aligned Back Gate IEEE Transactions on Electron Devices ·Xu Liu, H.I. Hanafi, J. Cai, C.T. Chuang	2005	2
2	Novel capacitor-less high density low power vertical memory S. Tiwari, H.I. Hanafi, A. Hartstein, E.F. Crabbé, Adrian R. Powell, Shankar S. Iyer, E. Tierney	2005	1
3	A low power 77 K nano-memory with single electron nano-crystal storage S. Tiwari, Farhan Rana, Wei Chen, K. Chan, H.I. Hanafi	2002	2
4	Volatile and non-volatile memories in silicon with nano-crystal storage S. Tiwari, Farhan Rana, K. Chan, H.I. Hanafi, Wei Liat Chan, D. A. Buchanan	2002	134
5	A scalable low power vertical memory H.I. Hanafi, S. Tiwari, C A EDEM, K Zheng, Anthony Thomas, 旧雨, Ray Scott Basham	2002	2
6	Floating-body concerns for SOI dynamic random access memory (DRAM) J. Mandelman, J. Barth, J. DeBrosse, R.H. Dennard, E Lotterer, J. Gautier, H.I. Hanafi	2002	5
7	New polysilicon disposable sidewall process for sub-50 nm CMOS Chen Huang, D. Boyd, Devi Nuraini Santi, J. J. Bucchignano, Jian Cai, K. Chan, H.I. Hanafi, P. Kozlowski, B Kells, R. Roy, Linqi Shi, E. Sikorski, M. Surendra, Shalom J. Wind, WATILA SANTOS BRAGA, Junghyo Yoon, Miguel Pereira de Oliveira, Sandy Johnstone, Yuan Taur	2001	1
8	Data Retention in SOI-DRAM with Trench Capacitor Cell European Solid-State Device Research Conference ·H.I. Hanafi, T. Kanarsky, S. Schmitz, O O Joel	1998	2
9	Fast and long retention-time nano-crystal memory IEEE Transactions on Electron Devices ·H.I. Hanafi, S. Tiwari, Imran Ullah Khan	1996	401
10	The Design, Fabrication and Characterization of 0.15 μm MOS Devices European Solid-State Device Research Conference ·H.I. Hanafi, P. Coane, Kadek Suarjuna Batubulan, G.P. Coleman, Masato Fuji	1993	1
11	A model for anomalous short-channel behavior in submicron MOSFETs IEEE Electron Device Letters ·H.I. Hanafi, W. Noble, Yseliam Tovar, Kody Varahramyan, Y. T. Lii, Kadek Suarjuna Batubulan	1993	28
12	Design and characterization of a CMOS off-chip driver/receiver with reduced power-supply disturbance IEEE Journal of Solid-State Circuits ·H.I. Hanafi, R.H. Dennard, Simoni Silva, Ryan Weiss, D.S. Zicherman	1992	13
13	Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors Applied Physics Letters ·D. K. Sadana, A. Acovic, B. Davari, Detlev Grützmacher, H.I. Hanafi, F. Cardone	1992	14
14	A CMOS Off-Chip Driver/Receiver with Reduced Signal Swing and Reduced Power-Supply Disturbance European Solid-State Circuits Conference ·H.I. Hanafi, R.H. Dennard, Christine Gommenginger, H. Jariwala, D.S. Zicherman	1991	1
15	Sidewall oxidation of polycrystalline-silicon gate IEEE Electron Device Letters ·C. Y. Wong, 唐道银, Jeyson Ferney Penagos Cañón, Yuan Taur, H.I. Hanafi	1989	12
16	A 20-ns 128-kbit4 high speed DRAM with 330-Mbit/s data rate IEEE Journal of Solid-State Circuits* ·Nicky Lu, H.H. Chao, Wei Hwang, W.H. Henkels, Adrienne M. Williams, H.I. Hanafi, Lewis M. Terman, R. Franch	1988	19
17	A HIGH PERFORMANCE LIQUID-NITROGEN CMOS SRAM TECHNOLOGY Le Journal de Physique Colloques ·J.Y.-C. Sun, S. P. Klepner, Yuan Taur, H.I. Hanafi, P.J. Restle, T. Bucelot, Karen Petrillo, R.H. Dennard, S.E. Schuster, T.I. Chappell, B.A. Chappell, David F. Heidel	1988	2
18	0.5 μm CMOS Device Design and Characterization European Solid-State Device Research Conference ·H.I. Hanafi, M.R. Wordeman, Shanborlang Bynnud, Yuan Taur, J.Y.-C. Sun, R.H. Dennard, D.S. Zicherman, Alyssa N. Montalbine, N. Haddad, 武志下野, Seyyed Ali Mozaffarpur	1987	1
19	Characterization of As-P double diffused drain structure 熊谷正彦, M. Hargrove, H.I. Hanafi, В.Г. Сурдин, D. Hoyniak, John C. LaRue, Daniel Thomas	1984	7
20	An accurate and simple MOSFET model for computer-aided design IEEE Journal of Solid-State Circuits ·H.I. Hanafi, T. Schultz, Kadek Suarjuna Batubulan	1982	28

About H.I. Hanafi

H.I. Hanafi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Infectious Diseases and Organic Chemistry, having authored 20 papers that have together received 676 indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Low-power high-performance VLSI design (4 papers), Silicon Carbide Semiconductor Technologies (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Electronic and Structural Properties of Oxides (3 papers), Advanced Memory and Neural Computing (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (644 citations), Materials Chemistry (331 citations), Atomic and Molecular Physics, and Optics (120 citations), Biomedical Engineering (104 citations) and Bioengineering (8 citations). H.I. Hanafi has collaborated with scholars based in United States, Hungary and France. Frequent co-authors include S. Tiwari, Imran Ullah Khan, Farhan Rana, K. Chan, D. A. Buchanan, Wei Liat Chan, Y. T. Lii, Kody Varahramyan, W. Noble and R.H. Dennard. Their work appears in journals such as IEEE Journal of Solid-State Circuits, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters and European Solid-State Circuits Conference.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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