G.O. Workman

750 total citations
24 papers, 323 citations indexed

About

G.O. Workman is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Information Systems. According to data from OpenAlex, G.O. Workman has authored 24 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 1 paper in Computer Networks and Communications and 1 paper in Information Systems. Recurrent topics in G.O. Workman's work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (22 papers) and Silicon Carbide Semiconductor Technologies (12 papers). G.O. Workman is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (22 papers) and Silicon Carbide Semiconductor Technologies (12 papers). G.O. Workman collaborates with scholars based in United States, Netherlands and India. G.O. Workman's co-authors include J.G. Fossum, S. Veeraraghavan, Lixin Ge, G. Gildenblat, Meng‐Hsueh Chiang, L. Mathew, Bich-Yen Nguyen, M.M. Chowdhury, Vishal Trivedi and M.M. Pelella and has published in prestigious journals such as IEEE Transactions on Electron Devices, Solid-State Electronics and Engineering Applications of Artificial Intelligence.

In The Last Decade

G.O. Workman

22 papers receiving 298 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G.O. Workman United States	11	311	22	19	10	10	24	323
P. O'Sullivan Ireland	8	256 0.8×	35 1.6×	13 0.7×	7 0.7×	25 2.5×	42	276
M.M. Pelella United States	11	380 1.2×	15 0.7×	33 1.7×	23 2.3×	18 1.8×	45	395
John Ellis-Monaghan United States	9	230 0.7×	34 1.5×	30 1.6×	7 0.7×	11 1.1×	19	234
Samuel Tang United States	8	286 0.9×	15 0.7×	43 2.3×	17 1.7×	7 0.7×	10	306
A. Bajolet France	10	280 0.9×	19 0.9×	21 1.1×	23 2.3×	23 2.3×	19	288
M.M. Chowdhury United States	8	467 1.5×	17 0.8×	48 2.5×	7 0.7×	15 1.5×	12	477
A. Villaret France	7	175 0.6×	20 0.9×	36 1.9×	5 0.5×	11 1.1×	24	180
Amit Jha United States	5	360 1.2×	19 0.9×	51 2.7×	18 1.8×	12 1.2×	12	372
James Victory United States	11	315 1.0×	12 0.5×	31 1.6×	10 1.0×	6 0.6×	31	327
Rainer Minixhofer Austria	10	302 1.0×	15 0.7×	15 0.8×	26 2.6×	5 0.5×	44	319

Countries citing papers authored by G.O. Workman

Since Specialization

Citations

This map shows the geographic impact of G.O. Workman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.O. Workman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.O. Workman more than expected).

Fields of papers citing papers by G.O. Workman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.O. Workman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.O. Workman. The network helps show where G.O. Workman may publish in the future.

Co-authorship network of co-authors of G.O. Workman

This figure shows the co-authorship network connecting the top 25 collaborators of G.O. Workman. A scholar is included among the top collaborators of G.O. Workman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.O. Workman. G.O. Workman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Subramanian, V., et al.. (2025). Scientific machine learning for generic compact model parameter extraction of nanoscale transistors. Engineering Applications of Artificial Intelligence. 162. 112392–112392.

Gaidhane, Amol D., et al.. (2023). Graph-Based Compact Model (GCM) for Efficient Transistor Parameter Extraction: A Machine Learning Approach on 12 nm FinFETs. IEEE Transactions on Electron Devices. 71(1). 254–262. 7 indexed citations

Agarwal, Harshit, Pragya Kushwaha, Avirup Dasgupta, et al.. (2020). BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion. 1–4. 12 indexed citations

Goo, Jung-Suk, R. Williams, G.O. Workman, et al.. (2008). Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges. 265–272. 1 indexed citations

Wu, Weimin, G. Gildenblat, G.O. Workman, et al.. (2007). PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs. 41–48. 14 indexed citations

Wu, Weimin, G. Gildenblat, G.O. Workman, et al.. (2007). PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs (Invited Paper). 3 indexed citations

Wu, Weimin, Xin Li, G. Gildenblat, et al.. (2007). A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 54(2). 316–322. 8 indexed citations

Ge, Lixin, F. Gámiz, G.O. Workman, & S. Veeraraghavan. (2006). On the gate capacitance limits of nanoscale DG and FD SOI MOSFETs. IEEE Transactions on Electron Devices. 53(4). 753–758. 18 indexed citations

Wu, Weimin, Xiaoyue Li, Hai Wang, et al.. (2006). SP-SOI: a third generation surface potential based compact SOI MOSFET model. 293. 814–817. 14 indexed citations

10.

Trivedi, Vishal, et al.. (2005). Physics-based compact modeling for nonclassical CMOS. International Conference on Computer Aided Design. 211–216. 1 indexed citations

11.

Mathew, L., Yang Du, Aaron Thean, et al.. (2004). Multi gated device architectures advances, advantages and challenges. 97–98.

12.

Fossum, J.G., Lixin Ge, Meng‐Hsueh Chiang, et al.. (2004). A process/physics-based compact model for nonclassical CMOS device and circuit design. Solid-State Electronics. 48(6). 919–926. 80 indexed citations

13.

Gu, Xin, G. Gildenblat, G.O. Workman, et al.. (2004). A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current. IEEE Transactions on Electron Devices. 51(1). 127–135. 41 indexed citations

14.

Gildenblat, G., Xiaoxiong Gu, Shachar Shapira, et al.. (2003). A Surface-Potential-Based Extrinsic Compact MOSFET Model. TechConnect Briefs. 2(2003). 364–367. 2 indexed citations

15.

Gildenblat, G., Xi Gu, Shachar Shapira, et al.. (2003). A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current. TechConnect Briefs. 2(2003). 318–321. 3 indexed citations

16.

Yang, Ji‐Woon, J.G. Fossum, G.O. Workman, & Cheng‐Liang Huang. (2003). A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits. Solid-State Electronics. 48(2). 259–270. 15 indexed citations

17.

Pelella, M.M., et al.. (2003). Analysis and control of hysteresis in PD/SOI CMOS. 831–834. 6 indexed citations

18.

Workman, G.O. & J.G. Fossum. (2002). Dynamic effects in BTG/SOI MOSFETs and circuits due to distributed body resistance. 28–29. 1 indexed citations

19.

Workman, G.O. & J.G. Fossum. (2000). Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum. IEEE Transactions on Electron Devices. 47(6). 1192–1201. 30 indexed citations

20.

Workman, G.O., J.G. Fossum, S. Krishnan, & M.M. Pelella. (1998). Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating. IEEE Transactions on Electron Devices. 45(1). 125–133. 31 indexed citations

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