Tianchun Ye

3.9k total citations
377 papers, 2.7k citations indexed

About

Tianchun Ye is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tianchun Ye has authored 377 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 324 papers in Electrical and Electronic Engineering, 90 papers in Biomedical Engineering and 78 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tianchun Ye's work include Semiconductor materials and devices (167 papers), Advancements in Semiconductor Devices and Circuit Design (103 papers) and Integrated Circuits and Semiconductor Failure Analysis (55 papers). Tianchun Ye is often cited by papers focused on Semiconductor materials and devices (167 papers), Advancements in Semiconductor Devices and Circuit Design (103 papers) and Integrated Circuits and Semiconductor Failure Analysis (55 papers). Tianchun Ye collaborates with scholars based in China, Singapore and Sweden. Tianchun Ye's co-authors include Chao Zhao, Wenwu Wang, Dapeng Chen, Jinjuan Xiang, Jun Luo, Changqing Xie, Junfeng Li, Huaxiang Yin, Guilei Wang and Huilong Zhu and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Tianchun Ye

323 papers receiving 2.6k citations

Peers

Tianchun Ye
Harish Subbaraman United States
David R. Allee United States
Umberto Celano Belgium
You-Chia Chang Taiwan
Jia‐Min Shieh Taiwan
Ofer Shapira United States
Eiji Higurashi Japan
Christopher A. Bower United States
Chi On Chui United States
Massood Tabib‐Azar United States
Harish Subbaraman United States
Tianchun Ye
Citations per year, relative to Tianchun Ye Tianchun Ye (= 1×) peers Harish Subbaraman

Countries citing papers authored by Tianchun Ye

Since Specialization
Citations

This map shows the geographic impact of Tianchun Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tianchun Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tianchun Ye more than expected).

Fields of papers citing papers by Tianchun Ye

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tianchun Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tianchun Ye. The network helps show where Tianchun Ye may publish in the future.

Co-authorship network of co-authors of Tianchun Ye

This figure shows the co-authorship network connecting the top 25 collaborators of Tianchun Ye. A scholar is included among the top collaborators of Tianchun Ye based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tianchun Ye. Tianchun Ye is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ma, Haiqiang, et al.. (2025). Constructing lithiophilic coating layer on the natural graphite for high-rate lithium-ion batteries. Electrochimica Acta. 527. 146275–146275. 1 indexed citations
2.
Li, Binhong, et al.. (2025). Low-phase-noise wideband dual-core quad-mode VCO using a mode-switching transformer. Microelectronics Journal. 164. 106815–106815.
3.
Lin, Hongxiao, Yuanhao Miao, Yongkui Zhang, et al.. (2025). Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET. Journal of Materials Science Materials in Electronics. 36(15).
4.
Yu, Yanguang, Xuan Zhang, Xing Zhao, et al.. (2025). The Planar Core–Shell Junctionless MOSFET. Micromachines. 16(4). 418–418. 1 indexed citations
5.
Liu, Fanyu, Siyuan Chen, Lei Shu, et al.. (2024). Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology. IEEE Transactions on Electron Devices. 71(10). 5867–5873. 1 indexed citations
6.
Ye, Tianchun, et al.. (2023). The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures. Microelectronics Reliability. 147. 115041–115041. 3 indexed citations
7.
Zhang, Zhaohao, Shujuan Mao, Gaobo Xu, et al.. (2023). An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors. IEEE Transactions on Electron Devices. 70(3). 1029–1033. 10 indexed citations
8.
Huang, Weixing, Huilong Zhu, Junjie Li, et al.. (2022). A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture. IEEE Electron Device Letters. 43(11). 1874–1877. 7 indexed citations
9.
Luo, Jun, Jing Xu, Jianfeng Gao, et al.. (2022). A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity. IEEE Transactions on Electron Devices. 70(1). 209–214. 5 indexed citations
10.
Chen, Chao, Hui Zeng, Libin Zhang, et al.. (2022). Analysis of diffraction-based wafer alignment rejection for thick aluminum process. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 40(2). 3 indexed citations
11.
Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al.. (2021). Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. Nanomaterials. 11(2). 309–309. 19 indexed citations
12.
Zhao, Chao, Jing Xu, Jianfeng Gao, et al.. (2021). A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation. IEEE Electron Device Letters. 42(7). 958–961. 5 indexed citations
13.
Wan, Weikang, Mei Xue, Liqiang Cao, Tianchun Ye, & Qidong Wang. (2020). Low-Profile Broadband Patch-Driven Metasurface Antenna. IEEE Antennas and Wireless Propagation Letters. 19(7). 1251–1255. 29 indexed citations
14.
Gu, Jie, Zhenhua Wu, Qingzhu Zhang, et al.. (2020). Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate. IEEE Transactions on Electron Devices. 68(1). 405–410. 5 indexed citations
15.
Liu, Fei, Jianhui Bu, Kun Luo, et al.. (2020). Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model. IEEE Transactions on Electron Devices. 67(6). 2243–2248. 24 indexed citations
16.
Du, Anyan, Chao Zhao, Jianfeng Gao, et al.. (2020). Investigation of Barrier Property of Amorphous Co–Ti Layer as Single Barrier/Liner in Local Co Interconnects. IEEE Transactions on Electron Devices. 67(5). 2076–2081. 7 indexed citations
17.
Mao, Shujuan, Guilei Wang, Jing Xu, et al.. (2019). Exploration of the impact of interface states density on the specific contact resistivity in TiSi x /n + -Si Ohmic contacts through high-low frequency method. Japanese Journal of Applied Physics. 58(SH). SHHD01–SHHD01. 1 indexed citations
18.
Ma, Xueli, Jinjuan Xiang, Xiaolei Wang, et al.. (2019). Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation. ECS Journal of Solid State Science and Technology. 8(6). N100–N105. 4 indexed citations
19.
Han, Kai, Xiaolei Wang, Jinjuan Xiang, et al.. (2019). Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs. Semiconductor Science and Technology. 34(7). 75009–75009. 3 indexed citations
20.
Pan, Yu, Tianchun Ye, Huaxiang Yin, et al.. (2019). Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate. IEEE Journal of the Electron Devices Society. 7. 483–488. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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