M. Ieong

5.7k total citations · 1 hit paper
72 papers, 3.7k citations indexed

About

M. Ieong is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Ieong has authored 72 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 11 papers in Biomedical Engineering. Recurrent topics in M. Ieong's work include Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (60 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). M. Ieong is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (60 papers), Semiconductor materials and devices (60 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). M. Ieong collaborates with scholars based in United States, Italy and United Kingdom. M. Ieong's co-authors include J. Kedzierski, H.‐S. Philip Wong, Min Yang, K. Rim, B. Doris, D.J. Frank, K.W. Guarini, D. Boyd, Anna W. Topol and T. Kanarsky and has published in prestigious journals such as Science, Journal of Applied Physics and Materials Today.

In The Last Decade

M. Ieong

68 papers receiving 3.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Three-dimensional integrated circuits

2006 501 citations Anna W. Topol, D.J. Frank et al. IBM Journal of Research and Development profile →

Peers

Countries citing papers authored by M. Ieong

Since Specialization

Citations

This map shows the geographic impact of M. Ieong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ieong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ieong more than expected).

Fields of papers citing papers by M. Ieong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ieong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ieong. The network helps show where M. Ieong may publish in the future.

Co-authorship network of co-authors of M. Ieong

This figure shows the co-authorship network connecting the top 25 collaborators of M. Ieong. A scholar is included among the top collaborators of M. Ieong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Ieong. M. Ieong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates 2006 ·(unknown), Zhibin Ren, K. L. Saenger, H.J. Hovel, (unknown), (unknown), (unknown), Stephen W. Bedell, G. Pfeiffer, (unknown), Victor Chan, D. K. Sadana, C.Y. Sung, Mukesh Khare, M. Ieong, G. Shahidi	1
2	Germanium channel MOSFETs: Opportunities and challenges 2006 ·IBM Journal of Research and Development ·Huiling Shang, Martin M. Frank, E. P. Gusev, J. O. Chu, Stephen W. Bedell, K.W. Guarini, M. Ieong	146
3	Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths 2006 ·(unknown), J.W. Sleight, J. M. Hergenrother, (unknown), K.A. Jenkins, O. Dokumaci, (unknown), Josephine Chang, Hiroki Nakayama, D. Chidambarrao, (unknown), (unknown), W. Natzle, (unknown), (unknown), J. A. Ott, M. Ieong, Wilfried Haensch	11
4	Transistor scaling with novel materials 2006 ·Materials Today ·M. Ieong, Vijay Narayanan, (unknown), Anna W. Topol, V. Chan, Zhibin Ren	39
5	Characteristics of high performance PFETs with embedded SiGe source/drain and >100< channels on 45° rotated wafers 2005 ·(unknown), M. Ieong, Massimo V. Fischetti, Siddhartha Panda, D. Boyd, K. Rim, J. A. Ott	3
6	Silicon Device Scaling to the Sub-10-nm Regime 2005 ·ChemInform ·M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang	6
7	Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs 2004 ·K. Rim, K. Chan, L. Shi, D. Boyd, J. A. Ott, N. Klymko, F. Cardone, (unknown), Steven J. Koester, (unknown), D. Canaperi, B. To, Elizabeth A. Duch, I. Babich, R. Carruthers, P. Saunders, George Walker, (unknown), M. Steen, M. Ieong	103
8	Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate 2004 ·IEEE Electron Device Letters ·Huiling Shang, (unknown), P. Kozlowski, C. D’Emic, I. Babich, E. Sikorski, M. Ieong, H.‐S. Philip Wong, K.W. Guarini, Wilfried Haensch	136
9	Silicon Device Scaling to the Sub-10-nm Regime 2004 ·Science ·M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang	459
10	Three dimensional CMOS devices and integrated circuits 2004 ·M. Ieong, K.W. Guarini, V. Chan, K. Bernstein, (unknown), J. Kedzierski, Wilfried Haensch	19
11	Soft error rate scaling for emerging SOI technology options 2003 ·P. Oldiges, K. Bernstein, David F. Heidel, (unknown), Ethan H. Cannon, R.H. Dennard, Haotian Tang, M. Ieong, H.‐S. Philip Wong	22
12	Extension and source/drain design for high-performance finFET devices 2003 ·IEEE Transactions on Electron Devices ·J. Kedzierski, M. Ieong, E. Nowak, T. Kanarsky, Ying Zhang, R. Roy, D. Boyd, David Fried, H.‐S. Philip Wong	198
13	Technology modeling for emerging SOI devices 2003 ·M. Ieong, P. Oldiges	4
14	Monte Carlo modeling of threshold variation due to dopant fluctuations 2003 ·D.J. Frank, Yuan Taur, M. Ieong, H.‐S. Philip Wong	31
15	Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model 2002 ·M. Ieong, P. M. Solomon, S.E. Laux, Hong Wong, D. Chidambarrao	154
16	Modeling line edge roughness effects in sub 100 nanometer gate length devices 2002 ·P. Oldiges, (unknown), Karen Petrillo, M. Sanchez, M. Ieong, M. Hargrove	94
17	Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon 2000 ·IEEE Transactions on Nuclear Science ·P. Oldiges, R.H. Dennard, David F. Heidel, (unknown), F. Assaderaghi, M. Ieong	25
18	Monte Carlo modeling of threshold variation due to dopant fluctuations 1999 ·D.J. Frank, Yuan Taur, M. Ieong, H.‐S. Philip Wong	139
19	Discretization of flux densities in device simulations using optimum artificial diffusivity 1995 ·IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ·(unknown), M. Ieong	13
20	Construction of higher-moment terms in the hydrodynamic electron-transport model 1993 ·Journal of Applied Physics ·Dwight Woolard, Huajun Tian, M. A. Littlejohn, K. W. Kim, R.J. Trew, M. Ieong, Ting-wei Tang	13

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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