A. V-Y. Thean

959 citations

17 papers · 388 indexed · 1 hit paper · h-index 10

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 10
- Advanced Memory and Neural Computing 5
- Integrated Circuits and Semiconductor Failure Analysis 4
- Ferroelectric and Negative Capacitance Devices 4
- Thin-Film Transistor Technologies 2
Cellular and Molecular Neuroscience
Materials Chemistry
Polymers and Plastics
Biomedical Engineering
- Nanowire Synthesis and Applications 2
- Advanced Sensor and Energy Harvesting Materials 2

Co-authors: Jin Feng Leong Maheswari Sivan Baoshan Tang Evgeny Zamburg Yida Li Moaz Waqar John Wang Hasita Veluri
Cited by: Electrical and Electronic Engineering Cellular and Molecular Neuroscience Materials Chemistry
Journals: Nature Communications (1 paper)Advanced Functional Materials (1 paper)npj 2D Materials and Applications (1 paper)
Partner nations: Belgium Singapore United States

In The Last Decade

A. V-Y. Thean

16 papers receiving 374 citations

Hit Papers

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Peers

Countries citing papers authored by A. V-Y. Thean

Since Specialization

Citations

This map shows the geographic impact of A. V-Y. Thean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V-Y. Thean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V-Y. Thean more than expected).

Fields of papers citing papers by A. V-Y. Thean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V-Y. Thean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V-Y. Thean. The network helps show where A. V-Y. Thean may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. V-Y. Thean, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. V-Y. Thean Line = papers co-authored together A. V-Y. Thean links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges npj 2D Materials and Applications ·Baoshan Tang,Maheswari Sivan,Jin Feng Leong,Zefeng Xu,Yu Zhang,Jianan Li,Renzhuo Wan,Quanzhen Wan,Evgeny Zamburg,A. V-Y. Thean	2024	12
2	1T1R and 2T0C1R IGZO-MoS₂ All-BEOL 3D Memory Cells Baoshan Tang,Zihang Fang,Renzhuo Wan,Sonu Hooda,Jin Feng Leong,Quanzhen Wan,Chun-Kuei Chen,Evgeny Zamburg,Joong-sik Kim,A. V-Y. Thean	2024	0
3	N‐P Reconfigurable Dual‐Mode Memtransistors for Compact Bio‐Inspired Feature Extractor with Inhibitory‐Excitatory Spiking Capability Advanced Functional Materials ·Jin Feng Leong,Zihang Fang,Maheswari Sivan,Jieming Pan,Baoshan Tang,Evgeny Zamburg,A. V-Y. Thean	2023	17
4	Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computingbreakdown → Nature Communications ·Baoshan Tang,Hasita Veluri,Yida Li,Zhi Gen Yu,Moaz Waqar,Jin Feng Leong,Maheswari Sivan,Evgeny Zamburg,Yong‐Wei Zhang,John Wang,A. V-Y. Thean	2022	170
5	A Near- & Short-Wave IR Tunable InGaAs Nanomembrane PhotoFET on Flexible Substrate for Lightweight and Wide-Angle Imaging Applications Yida Li,A. Alian,Li Huang,Kah‐Wee Ang,Dennis Lin,D. Mocuta,Nadine Collaert,A. V-Y. Thean	2018	1
6	Top-down InGaAs nanowire and fin vertical FETs with record performance S. Ramesh,Ts. Ivanov,Elisabeth Camerotto,Nan Sun,J. Franco,A. Sibaja-Hernandez,R. Rooyackers,A. Alian,Roger Loo,A. Veloso,Alexey Milenin,Dennis Lin,Paola Favia,H. Bender,Nadine Collaert,A. V-Y. Thean,K. De Meyer	2016	7
7	Towards high performance sub-10nm finW bulk FinFET technology T. Chiarella,Stefan Kubicek,Erik Rosseel,R. Ritzenthaler,Andriy Hikavyy,Pierre Eyben,A. De Keersgieter,L.-Å. Ragnarsson,M.-S Kim,Soon Aik Chew,T. Schram,S. Demuynck,M. Cupak,L. Rijnders,M. Dehan,Naoto Horiguchi,Jérôme Mitard,D. Mocuta,A. Mocuta,A. V-Y. Thean	2016	15
8	Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations Pierre Eyben,Philippe Matagne,T. Chiarella,A. De Keersgieter,Stefan Kubicek,Jérôme Mitard,A. Mocuta,Naoto Horiguchi,A. V-Y. Thean,D. Mocuta	2016	1
9	5nm: Has the time for a device change come? Prasanth Raghavan,M. Garcia Bardon,Peter Debacker,P. Schuddinck,Doyoung Jang,Rogier Baert,Diederik Verkest,A. V-Y. Thean	2016	5
10	Vertical device architecture for 5nm and beyond: Device & circuit implications A. V-Y. Thean,Dmitry Yakimets,Trong Huynh-Bao,P. Schuddinck,Sushil Sakhare,M. Garcia Bardon,A. Sibaja-Hernandez,Ivan Ciofi,Geert Eneman,A. Veloso,Julien Ryckaert,Prasanth Raghavan,A. Mercha,A. Mocuta,Zs. Tôkei,Diederik Verkest,Piet Wambacq,K. De Meyer,Nadine Collaert	2015	40
11	Scalpel soft retrace scanning spreading resistance microscopy for 3D-carrier profiling in sub-10nm WFIN FinFET Pierre Eyben,T. Chiarella,Stefan Kubicek,H. Bender,Olivier Richard,Jérôme Mitard,A. Mocuta,Naoto Horiguchi,A. V-Y. Thean	2015	3
12	A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions Y. Sasaki,R. Ritzenthaler,A. De Keersgieter,T. Chiarella,Stefan Kubicek,Erik Rosseel,A. Waite,J. del Agua Borniquel,B. Colombeau,Soon Aik Chew,M. S. Kim,T. Schram,S. Demuynck,Wilfried Vandervorst,Naoto Horiguchi,D. Mocuta,A. Mocuta,A. V-Y. Thean	2015	9
13	Novel junction design for NMOS Si Bulk-FinFETs with extension doping by PEALD phosphorus doped silicate glass Y. Sasaki,R. Ritzenthaler,Yasutaka Kimura,David De Roest,Xiusong Shi,A. De Keersgieter,M. S. Kim,Soon Aik Chew,S. Kubicek,T. Schram,Yoshiaki Kikuchi,S. Demuynck,A. Veloso,Wilfried Vandervorst,Naoto Horiguchi,D. Mocuta,A. Mocuta,A. V-Y. Thean	2015	11
14	Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies VUBIR (Vrije Universiteit Brussel) ·Trong Huynh-Bao,Dmitry Yakimets,Julien Ryckaert,Ivan Ciofi,Rogier Baert,A. Veloso,Juergen Boemmels,Nadine Collaert,Ph. Roussel,S. Demuynck,Prasanth Raghavan,A. Mercha,Zs. Tôkei,Diederik Verkest,A. V-Y. Thean,Piet Wambacq	2014	33
15	Perspective of tunnel-FET for future low-power technology nodes Anne S. Verhulst,Devin Verreck,Quentin Smets,Kuo-Hsing Kao,Maarten L. Van de Put,R. Rooyackers,Bart Sorée,A. Vandooren,K. De Meyer,G. Groeseneken,Marc Heyns,A. Mocuta,Nadine Collaert,A. V-Y. Thean	2014	23
16	First demonstration of 15nm-W<inf>FIN</inf> inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain Jérôme Mitard,L. Witters,Hiroaki Arimura,Y. Sasaki,Alexey Milenin,Roger Loo,Andriy Hikavyy,Geert Eneman,Pieter Lagrain,Hans Mertens,Sonja Sioncke,C. Vrancken,H. Bender,K. Barla,Naoto Horiguchi,A. Mocuta,Nadine Collaert,A. V-Y. Thean	2014	13
17	Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors A. V-Y. Thean,Z-H Shi,L. Mathew,T. Stephens,H. Desjardin,C. Parker,T. White,M. W. Stoker,L. Prabhu,R. Garcia,B.-Y. Nguyen,Sharon Murphy,R. Rai,J. Conner,B. E. White,S. Venkatesan	2006	28

About A. V-Y. Thean

A. V-Y. Thean is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Biomedical Engineering, having authored 17 papers that have together received 388 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Advanced Memory and Neural Computing (5 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Thin-Film Transistor Technologies (2 papers), Nanowire Synthesis and Applications (2 papers) and Advanced Sensor and Energy Harvesting Materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (356 citations), Cellular and Molecular Neuroscience (45 citations) and Materials Chemistry (100 citations). A. V-Y. Thean has collaborated with scholars based in Belgium, Singapore and United States. Frequent co-authors include Jin Feng Leong, Maheswari Sivan, Baoshan Tang, Evgeny Zamburg, Yida Li, Moaz Waqar, John Wang, Hasita Veluri, Yong‐Wei Zhang and Zhi Gen Yu. Their work appears in journals such as Nature Communications, Advanced Functional Materials and npj 2D Materials and Applications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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