A. V-Y. Thean

959 total citations · 1 hit paper
17 papers, 388 citations indexed

About

A. V-Y. Thean is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Polymers and Plastics. According to data from OpenAlex, A. V-Y. Thean has authored 17 papers receiving a total of 388 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 2 papers in Polymers and Plastics. Recurrent topics in A. V-Y. Thean's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Advanced Memory and Neural Computing (5 papers). A. V-Y. Thean is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Advanced Memory and Neural Computing (5 papers). A. V-Y. Thean collaborates with scholars based in Belgium, Singapore and United States. A. V-Y. Thean's co-authors include Jin Feng Leong, Maheswari Sivan, Baoshan Tang, Evgeny Zamburg, Yida Li, Moaz Waqar, John Wang, Hasita Veluri, Yong‐Wei Zhang and Zhi Gen Yu and has published in prestigious journals such as Nature Communications, Advanced Functional Materials and npj 2D Materials and Applications.

In The Last Decade

A. V-Y. Thean

16 papers receiving 374 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

2022 170 citations Baoshan Tang, Hasita Veluri et al. Nature Communications profile →

Peers

A. V-Y. Thean

EEE

MC

BE

CMN

PP

Lingfei Wang China

Jong-Ho Lee South Korea

Tanmay Chavan United States

Eunpyo Park South Korea

Md. Hasan Raza Ansari Saudi Arabia

Geon‐Beom Lee South Korea

Sadegh Kamaei Switzerland

Byeong Hyeon Lee South Korea

Hasita Veluri Singapore

Yutuo Guo China

Lingfei Wang China

A. V-Y. Thean

263 ×0.7

EEE

107 ×1.1

MC

42 ×0.6

BE

50 ×1.1

CMN

42 ×1.9

PP

Citations per year, relative to A. V-Y. Thean A. V-Y. Thean (= 1×) peers Lingfei Wang

Countries citing papers authored by A. V-Y. Thean

Since Specialization

Citations

This map shows the geographic impact of A. V-Y. Thean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V-Y. Thean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V-Y. Thean more than expected).

Fields of papers citing papers by A. V-Y. Thean

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V-Y. Thean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V-Y. Thean. The network helps show where A. V-Y. Thean may publish in the future.

Co-authorship network of co-authors of A. V-Y. Thean

This figure shows the co-authorship network connecting the top 25 collaborators of A. V-Y. Thean. A scholar is included among the top collaborators of A. V-Y. Thean based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V-Y. Thean. A. V-Y. Thean is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

1.

Tang, Baoshan, Maheswari Sivan, Jin Feng Leong, et al.. (2024). Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges. npj 2D Materials and Applications. 8(1). 12 indexed citations

2.

Tang, Baoshan, Renzhuo Wan, Sonu Hooda, et al.. (2024). 1T1R and 2T0C1R IGZO-MoS₂ All-BEOL 3D Memory Cells. 1–4.

3.

Leong, Jin Feng, Maheswari Sivan, Jieming Pan, et al.. (2023). N‐P Reconfigurable Dual‐Mode Memtransistors for Compact Bio‐Inspired Feature Extractor with Inhibitory‐Excitatory Spiking Capability. Advanced Functional Materials. 33(45). 17 indexed citations

4.

Tang, Baoshan, Hasita Veluri, Yida Li, et al.. (2022). Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nature Communications. 13(1). 3037–3037. 170 indexed citations breakdown →

5.

Li, Yida, A. Alian, Li Huang, et al.. (2018). A Near- & Short-Wave IR Tunable InGaAs Nanomembrane PhotoFET on Flexible Substrate for Lightweight and Wide-Angle Imaging Applications. 51. 159–160. 1 indexed citations

6.

Ivanov, Ts., Nan Sun, J. Franco, et al.. (2016). Top-down InGaAs nanowire and fin vertical FETs with record performance. 1–2. 7 indexed citations

7.

Chiarella, T., Stefan Kubicek, Erik Rosseel, et al.. (2016). Towards high performance sub-10nm finW bulk FinFET technology. 131–134. 15 indexed citations

8.

Eyben, Pierre, Philippe Matagne, T. Chiarella, et al.. (2016). Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations. 287–290. 1 indexed citations

9.

Raghavan, Prasanth, M. Garcia Bardon, Peter Debacker, et al.. (2016). 5nm: Has the time for a device change come?. 275–277. 5 indexed citations

10.

Thean, A. V-Y., Dmitry Yakimets, Trong Huynh-Bao, et al.. (2015). Vertical device architecture for 5nm and beyond: Device & circuit implications. T26–T27. 40 indexed citations

11.

Eyben, Pierre, T. Chiarella, Stefan Kubicek, et al.. (2015). Scalpel soft retrace scanning spreading resistance microscopy for 3D-carrier profiling in sub-10nm WFIN FinFET. 14.1.1–14.1.4. 3 indexed citations

12.

Ritzenthaler, R., A. De Keersgieter, T. Chiarella, et al.. (2015). A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions. T30–T31. 9 indexed citations

13.

Ritzenthaler, R., David De Roest, Xiusong Shi, et al.. (2015). Novel junction design for NMOS Si Bulk-FinFETs with extension doping by PEALD phosphorus doped silicate glass. 21.8.1–21.8.4. 11 indexed citations

14.

Huynh-Bao, Trong, Dmitry Yakimets, Julien Ryckaert, et al.. (2014). Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. VUBIR (Vrije Universiteit Brussel). 33 indexed citations

15.

Verhulst, Anne S., Devin Verreck, Quentin Smets, et al.. (2014). Perspective of tunnel-FET for future low-power technology nodes. 30.2.1–30.2.4. 23 indexed citations

16.

Mitard, Jérôme, Hiroaki Arimura, Alexey Milenin, et al.. (2014). First demonstration of 15nm-W<inf>FIN</inf> inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain. 16.5.1–16.5.4. 13 indexed citations

17.

Thean, A. V-Y., L. Mathew, C. Parker, et al.. (2006). Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors. 1–4. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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