Toshiro Hiramoto
- Electrical and Electronic Engineering top 0.5%
- Atomic and Molecular Physics, and Optics top 2%
- Materials Chemistry top 5%
- Biomedical Engineering top 5%
- Hardware and Architecture top 5%
- Co-authors
- Masaharu KobayashiTakuya SarayaHiroki IshikuroMasumi SaitohAkio NishidaTakaaki TsunomuraFei MoGen Tsutsui
- Topics
- Semiconductor materials and devices (323 papers)Advancements in Semiconductor Devices and Circuit Design (293 papers)Ferroelectric and Negative Capacitance Devices (82 papers)
- Cited by
- Electrical and Electronic EngineeringAtomic and Molecular Physics, and OpticsHardware and Architecture
- Partner nations
- JapanUnited StatesSouth Korea
In The Last Decade
Toshiro Hiramoto
383 papers receiving 5.0k citations
Peers
Comparison fields: 5 of 74
- Electrical and Electronic Engineering 5.0k
- Atomic and Molecular Physics, and Optics 1.2k
- Materials Chemistry 1.1k
- Biomedical Engineering 837
- Hardware and Architecture 174
Countries citing papers authored by Toshiro Hiramoto
This map shows the geographic impact of Toshiro Hiramoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshiro Hiramoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshiro Hiramoto more than expected).
Fields of papers citing papers by Toshiro Hiramoto
This network shows the impact of papers produced by Toshiro Hiramoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshiro Hiramoto. The network helps show where Toshiro Hiramoto may publish in the future.
Co-authorship network of co-authors of Toshiro Hiramoto
This figure shows the co-authorship network connecting the top 25 collaborators of Toshiro Hiramoto. A scholar is included among the top collaborators of Toshiro Hiramoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshiro Hiramoto. Toshiro Hiramoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 28 | |
| 4 | Mobility-enhanced FET and Wakeup-free Ferroelectric Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application | 1 |
| 5 | 1 | |
| 6 | 15 | |
| 7 | 106 | |
| 8 | 19 | |
| 9 | 1 | |
| 10 | 27 | |
| 11 | Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential | 0 |
| 12 | Ion/Ioff Ratio Enhancement and Scalability of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO2 | 1 |
| 13 | On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO 2 for Energy-Efficient Sub-0.2V Operation | 3 |
| 14 | Negative Capacitance as a Performance Booster for Tunnel FET | 4 |
| 15 | 3 | |
| 16 | High hole mobility in multiple silicon nanowire gate-all-around pMOSFETs on (110) SOI | 2 |
| 17 | A new methodology for evaluating V T variability considering dopant depth profile | 2 |
| 18 | Post-Fabrication self-convergence scheme for suppressing variability in SRAM cells and logic transistors | 4 |
| 19 | 20 | |
| 20 | A Bipolar-Based 0.5μm BiCMOS Technology on Bonded SOI for High-Speed LSIs (Special Section on High Speed and High Density Multi Functional LSI Memories) | 0 |
About Toshiro Hiramoto
Toshiro Hiramoto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 416 papers that have together received 5.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (323 papers), Advancements in Semiconductor Devices and Circuit Design (293 papers) and Ferroelectric and Negative Capacitance Devices (82 papers). The work is most often cited by research in Electrical and Electronic Engineering (5.0k citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Hardware and Architecture (174 citations). Toshiro Hiramoto has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Masaharu Kobayashi, Takuya Saraya, Hiroki Ishikuro, Masumi Saitoh, Akio Nishida, Takaaki Tsunomura, Fei Mo, Gen Tsutsui, Yi Shi and M. Saitoh. Their work appears in journals such as Nano Letters, ACS Nano and Applied Physics Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.