A.M. Waite

465 total citations
27 papers, 230 citations indexed

About

A.M. Waite is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Ecology. According to data from OpenAlex, A.M. Waite has authored 27 papers receiving a total of 230 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Ecology. Recurrent topics in A.M. Waite's work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). A.M. Waite is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). A.M. Waite collaborates with scholars based in United Kingdom, United States and Canada. A.M. Waite's co-authors include A G R Evans, Gardner C. Bent, A.G. O’Neill, Sarah H. Olsen, K.S.K. Kwa, Sanatan Chattopadhyay, David J. Norris, A.G. Cullis, T. E. Whall and Douglas J. Paul and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

A.M. Waite

24 papers receiving 199 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.M. Waite United Kingdom	8	191	31	31	26	15	27	230
Zeyu Cui China	7	61 0.3×	13 0.4×	52 1.7×	21 0.8×	58 3.9×	17	167
Ashutosh Pandey India	7	109 0.6×	10 0.3×	6 0.2×	47 1.8×	42 2.8×	24	183
Sang Wan Kim South Korea	9	489 2.6×	2 0.1×	103 3.3×	18 0.7×	8 0.5×	31	518
Tao Hu China	11	198 1.0×	4 0.1×	5 0.2×	37 1.4×	75 5.0×	30	304
G. Jin China	7	38 0.2×	8 0.3×	35 1.1×	9 0.3×	1 0.1×	18	171
Francesco Bausi United Kingdom	10	258 1.4×	3 0.1×	11 0.4×	23 0.9×	23 1.5×	16	294
M. Tomášek Czechia	6	32 0.2×	4 0.1×	14 0.5×	6 0.2×	34 2.3×	13	89
J.F. Cadiou France	8	72 0.4×	9 0.3×	3 0.1×	44 1.7×	18 1.2×	19	232
Shanshan Zhuo China	9	113 0.6×	2 0.1×	204 6.6×	68 2.6×	3 0.2×	10	349
Anika Krause United Kingdom	7	60 0.3×	5 0.2×	25 0.8×	46 1.8×	16 1.1×	10	204

Countries citing papers authored by A.M. Waite

Since Specialization

Citations

This map shows the geographic impact of A.M. Waite's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.M. Waite with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.M. Waite more than expected).

Fields of papers citing papers by A.M. Waite

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.M. Waite. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.M. Waite. The network helps show where A.M. Waite may publish in the future.

Co-authorship network of co-authors of A.M. Waite

This figure shows the co-authorship network connecting the top 25 collaborators of A.M. Waite. A scholar is included among the top collaborators of A.M. Waite based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.M. Waite. A.M. Waite is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bent, Gardner C., Peter A. Steeves, & A.M. Waite. (2014). Equations for estimating selected streamflow statistics in Rhode Island. Scientific investigations report. 8 indexed citations

Bent, Gardner C. & A.M. Waite. (2013). Equations for estimating bankfull channel geometry and discharge for streams in Massachusetts. Scientific investigations report. 16 indexed citations

Krueger, C., Thomas Feudel, A.M. Waite, et al.. (2011). Achieving Uniform Device Performance by Using Advanced Process Control and SuperScan™. AIP conference proceedings. 123–126. 2 indexed citations

Yang, Bin, Min Yang, David Fried, et al.. (2007). CMOS Fabricated by Hybrid-Orientation Technology (HOT). 8–13. 1 indexed citations

Waite, A.M., Karen L. Osman, Weiqun Zhang, et al.. (2005). Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy. ePrints Soton (University of Southampton).

Waite, A.M., A G R Evans, T. J. Grasby, et al.. (2005). Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect. Semiconductor Science and Technology. 20(8). 673–676. 3 indexed citations

Paul, Douglas J., A.M. Waite, A G R Evans, et al.. (2005). Enhanced p-MOSFET performance using strained-Si on SiGe virtual substrates grown by low energy plasma enhanced chemical vapor deposition. ePrints Soton (University of Southampton). 1 indexed citations

Waite, A.M., Karen L. Osman, Weiqun Zhang, et al.. (2005). Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy. Solid-State Electronics. 49(4). 529–534. 4 indexed citations

Olsen, Sarah H., A.G. O’Neill, David J. Norris, et al.. (2004). Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices. Materials Science and Engineering B. 109(1-3). 78–84. 8 indexed citations

10.

Paul, Douglas J., A.M. Waite, A G R Evans, et al.. (2004). Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process. ePrints Soton (University of Southampton).

11.

Paul, Douglas J., et al.. (2004). The relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengths. 51–52. 2 indexed citations

12.

Waite, A.M., P. Ashburn, A G R Evans, et al.. (2004). Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects. View. 223–226. 3 indexed citations

13.

Paul, Douglas J., Sarah H. Olsen, A.G. O’Neill, et al.. (2004). Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25μm heterostructure CMOS process. Materials Science in Semiconductor Processing. 8(1-3). 343–346. 1 indexed citations

14.

Palmer, Michael J., T. J. Grasby, P. J. Phillips, et al.. (2002). Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B. 89(1-3). 444–448. 3 indexed citations

15.

Waite, A.M.. (2002). A Practical Guide to Call Center Technology. 3 indexed citations

16.

Palmer, Michael J., G. Braithwaite, T. J. Grasby, et al.. (2001). Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise. 179–182. 9 indexed citations

17.

Palmer, Michael J., G. Braithwaite, E. H. C. Parker, et al.. (2001). Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices. 3. 199–202. 6 indexed citations

18.

Sidek, Roslina Mohd, A.M. Waite, A G R Evans, et al.. (2000). SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide. Semiconductor Science and Technology. 15(4). 423–423. 1 indexed citations

19.

Sidek, Roslina Mohd, A.M. Waite, A G R Evans, et al.. (2000). SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide. Semiconductor Science and Technology. 15(2). 135–138. 6 indexed citations

20.

Waite, A.M., et al.. (1998). A Novel Deep Submicron Elevated Source/Drain MOSFET. ePrints Soton (University of Southampton). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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