H.E. Maes
About
In The Last Decade
H.E. Maes
282 papers receiving 8.1k citations
Hit Papers
Peers
Comparison fields: 5 of 85
- Electrical and Electronic Engineering 7.8k
- Materials Chemistry 1.6k
- Atomic and Molecular Physics, and Optics 1.1k
- Biomedical Engineering 969
- Electronic, Optical and Magnetic Materials 400
Countries citing papers authored by H.E. Maes
This map shows the geographic impact of H.E. Maes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.E. Maes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.E. Maes more than expected).
Fields of papers citing papers by H.E. Maes
This network shows the impact of papers produced by H.E. Maes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.E. Maes. The network helps show where H.E. Maes may publish in the future.
Co-authorship network of co-authors of H.E. Maes
This figure shows the co-authorship network connecting the top 25 collaborators of H.E. Maes. A scholar is included among the top collaborators of H.E. Maes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.E. Maes. H.E. Maes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 16 | |
| 2 | Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes | 46 |
| 3 | Co-design methodology to provide high ESD protection levels in the advanced RF circuits | 8 |
| 4 | A 6mW, 1.5dB NF CMOS LNA for GPS with 3kV HBM ESD-protection | 5 |
| 5 | Modelling and extraction of RF performance parameters of CMOS Electrostatic Discharge protection devices | 8 |
| 6 | Reliability of Ultra-thin Oxides for the Giga-bit generations | 5 |
| 7 | A Compact MOSFET Breakdown Model for Optimization of Gate Coupled ESD Protection Circuits | 8 |
| 8 | Back-bias Enhanced Source-Side Injection in 0.25um Embedded Flash Memories | 3 |
| 9 | Study of DC Stress Induced Leakage Current (SILC) and its Dependence on Oxide Nitridation | 9 |
| 10 | Comparison Of The Suitability Of Various Programming Mechanisms Used For Multilevel Non-Volatile Information Storage | 5 |
| 11 | On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate | 5 |
| 12 | Mechanical Stress in and Surrounding CoSi 2 and TiSi 2 Lines | 1 |
| 13 | Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides | 5 |
| 14 | Investigation and Suppression of the Gate Disturb Effect in Source-Side Injection Flash EEPROM Arrays | 1 |
| 15 | Charge Pumping of Single Interface Traps in Submicron MOSFET's | 2 |
| 16 | Optimization of a submicron HIMOS Flash E 2 PROM cell for implementation in a virtual ground array configuration | 1 |
| 17 | Solid state device research 92 : proceedings of the 22nd European Solid State Device Research Conference, ESSDERC '92, 14-17 September 1992, Leuven, Belgium | 1 |
| 18 | Degradation phenomena of tunnel oxide floating gate EEPROM devices | 2 |
| 19 | Characterization and analysis of hot-carrier degradation in p-channel transistors using constant current stress experiments | 3 |
| 20 | Recent Developments in Non-Volatile Semiconductor Memories | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.