Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies
if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the
same subfield and year (this is the minimum needed to enter the top 1%, not the average
within it), or reaches the top citation threshold in at least one of its specific research
topics.
A reliable approach to charge-pumping measurements in MOS transistors
19841.0k citationsG. Groeseneken, H.E. Maes et al.profile →
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
1998513 citationsR. Degraeve, G. Groeseneken et al.profile →
Author Peers
Peers are selected by citation overlap in the author's most active subfields.
citations ·
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This map shows the geographic impact of H.E. Maes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.E. Maes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.E. Maes more than expected).
This network shows the impact of papers produced by H.E. Maes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.E. Maes. The network helps show where H.E. Maes may publish in the future.
Co-authorship network of co-authors of H.E. Maes
This figure shows the co-authorship network connecting the top 25 collaborators of H.E. Maes.
A scholar is included among the top collaborators of H.E. Maes based on the total number of
citations received by their joint publications. Widths of edges
represent the number of papers authors have co-authored together.
Node borders
signify the number of papers an author published with H.E. Maes. H.E. Maes is excluded from
the visualization to improve readability, since they are connected to all nodes in the network.
All Works
20 of 20 papers shown
1.
Vassilev, V., S. Thijs, Paul Leroux, et al.. (2003). Co-design methodology to provide high ESD protection levels in the advanced RF circuits. Electrical Overstress/Electrostatic Discharge Symposium. 1–9.8 indexed citations
2.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269.46 indexed citations
3.
Vassilev, V., G. Groeseneken, S. Jenei, et al.. (2002). Modelling and extraction of RF performance parameters of CMOS Electrostatic Discharge protection devices. Electrical Overstress/Electrostatic Discharge Symposium. 111–118.8 indexed citations
4.
Leroux, Paul, Vesselin Vassilev, Michiel Steyaert, & H.E. Maes. (2002). A 6mW, 1.5dB NF CMOS LNA for GPS with 3kV HBM ESD-protection. Electrical Overstress/Electrostatic Discharge Symposium. 18–25.5 indexed citations
5.
Groeseneken, G., R. Degraeve, T. Nigam, B. Kaczer, & H.E. Maes. (1999). Reliability of Ultra-thin Oxides for the Giga-bit generations. European Solid-State Device Research Conference. 1. 72–80.5 indexed citations
6.
Vassilev, V., G. Groeseneken, Karlheinz Bock, & H.E. Maes. (1999). A Compact MOSFET Breakdown Model for Optimization of Gate Coupled ESD Protection Circuits. European Solid-State Device Research Conference. 1. 600–603.8 indexed citations
7.
Houdt, Jan Van, et al.. (1999). Back-bias Enhanced Source-Side Injection in 0.25um Embedded Flash Memories. European Solid-State Device Research Conference. 1. 608–611.3 indexed citations
8.
Houdt, Jan Van, et al.. (1996). Comparison Of The Suitability Of Various Programming Mechanisms Used For Multilevel Non-Volatile Information Storage. European Solid-State Device Research Conference. 139–142.5 indexed citations
9.
Ogier, J.-L., R. Degraeve, G. Groeseneken, & H.E. Maes. (1996). On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate. European Solid-State Device Research Conference. 763–766.5 indexed citations
10.
Blauwe, J. De, R. Degraeve, R. Bellens, et al.. (1996). Study of DC Stress Induced Leakage Current (SILC) and its Dependence on Oxide Nitridation. European Solid-State Device Research Conference. 361–364.9 indexed citations
11.
Ogier, J.-L., R. Degraeve, Ph. Roussel, G. Groeseneken, & H.E. Maes. (1995). Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides. European Solid-State Device Research Conference. 299–302.5 indexed citations
12.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (1995). Investigation and Suppression of the Gate Disturb Effect in Source-Side Injection Flash EEPROM Arrays. European Solid-State Device Research Conference. 553–556.1 indexed citations
13.
Groeseneken, G., Ingrid De Wolf, R. Bellens, & H.E. Maes. (1994). Charge Pumping of Single Interface Traps in Submicron MOSFET's. European Solid-State Device Research Conference. 609–612.2 indexed citations
14.
Bellens, R., et al.. (1993). Comparative study of hot-carrier degradation in p + and n + poly p-MOSFET's of a 0.5 μm CMOS technology. European Solid-State Device Research Conference. 829–832.2 indexed citations
15.
Houdt, Jan Van, D. Wellekens, L. Haspeslagh, et al.. (1993). Optimization of a submicron HIMOS Flash E 2 PROM cell for implementation in a virtual ground array configuration. European Solid-State Device Research Conference. 381–384.1 indexed citations
16.
Wolf, Ingrid De, H.E. Maes, & Y. Kevin. (1993). Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate. European Solid-State Device Research Conference. 565–568.1 indexed citations
17.
Maes, H.E., R. Mertens, & R. Van Overstraeten. (1992). Solid state device research 92 : proceedings of the 22nd European Solid State Device Research Conference, ESSDERC '92, 14-17 September 1992, Leuven, Belgium. Elsevier eBooks.1 indexed citations
18.
Witters, J., G. Groeseneken, & H.E. Maes. (1987). Degradation phenomena of tunnel oxide floating gate EEPROM devices. European Solid-State Device Research Conference. 167–170.2 indexed citations
19.
Bellens, R., Paul Heremans, G. Groeseneken, & H.E. Maes. (1987). Characterization and analysis of hot-carrier degradation in p-channel transistors using constant current stress experiments. European Solid-State Device Research Conference. 159–162.3 indexed citations
20.
Maes, H.E.. (1983). Recent Developments in Non-Volatile Semiconductor Memories. European Solid-State Circuits Conference. 1–6.1 indexed citations
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive
bibliographic database. While OpenAlex provides broad and valuable coverage of the global
research landscape, it—like all bibliographic datasets—has inherent limitations. These include
incomplete records, variations in author disambiguation, differences in journal indexing, and
delays in data updates. As a result, some metrics and network relationships displayed in
Rankless may not fully capture the entirety of a scholar's output or impact.