Ts. Ivanov

484 citations

24 papers · 204 indexed · h-index 9

Atomic and Molecular Physics, and Optics
- Quantum and electron transport phenomena 7
Electrical and Electronic Engineering
- Advancements in Semiconductor Devices and Circuit Design 16
- Semiconductor materials and devices 10
- Radio Frequency Integrated Circuit Design 7
- 3D IC and TSV technologies 3
- Integrated Circuits and Semiconductor Failure Analysis 2
Condensed Matter Physics
Artificial Intelligence
- Quantum Computing Algorithms and Architecture 5
Computational Theory and Mathematics
Biomedical Engineering
- Nanowire Synthesis and Applications 3

Co-authors: B. Govoreanu Julien Jussot Iuliana Radu Massimo Mongillo Daniel Pérez Lozano Fahd A. Mohiyaddin Anton Potočnik Danny Wan
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Physical Review Applied (1 paper)IEEE Electron Device Letters (1 paper)Microelectronic Engineering (1 paper)
Partner nations: Belgium United States Singapore

In The Last Decade

Ts. Ivanov

23 papers receiving 195 citations

Peers

Countries citing papers authored by Ts. Ivanov

Since Specialization

Citations

This map shows the geographic impact of Ts. Ivanov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ts. Ivanov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ts. Ivanov more than expected).

Fields of papers citing papers by Ts. Ivanov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ts. Ivanov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ts. Ivanov. The network helps show where Ts. Ivanov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Ts. Ivanov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ts. Ivanov Line = papers co-authored together Ts. Ivanov links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Advanced CMOS manufacturing of superconducting qubits on 300 mm wafers Nature ·Hao Peng,Bernard Cuny,Zu‐qiang Bian,Ts. Ivanov,Daniel Pérez Lozano,Olimjonov Ortigʻali Orifjon oʻgʻli,Diana Piotrowska,P Abraham Bagbila,Yannick Hermans,J. Horo,Martha Nayeli Gutiérrez-Ambrosio,Massimo Mongillo,Derrick C. Wan,Soma Raju K. R. C,Anton Potočnik,J. I. Bakker	2024	15
2	Argon-Milling-Induced Decoherence Mechanisms in Superconducting Quantum Circuits Physical Review Applied ·Hao Peng,Ts. Ivanov,Paola Favia,Thierry Conard,Tongmin He,Zu‐qiang Bian,Daniel Pérez Lozano,Bart Raes,Joris Van de Vondel,A. M. Vadiraj,Massimo Mongillo,Danny Wan,Soma Raju K. R. C,Anton Potočnik,Kristiaan De Greve	2023	6
3	Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer Nature Electronics ·Zu‐qiang Bian,S. Brebels,Alexander Grill,Tongmin He,Ts. Ivanov,Daniel Pérez Lozano,Danny Wan,Hao Peng,Şerif Birinç,Massimo Mongillo,B. Govoreanu,Jan Craninckx,Iuliana Radu,Kristiaan De Greve,Georges Gielen,Francky Catthoor,Anton Potočnik	2023	25
4	Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling Journal of Applied Physics ·Juhi Bhayani,Ts. Ivanov,A. Sibaja-Hernandez,R. J. Gorlin,柏平,Alexey Milenin,Austin Morris,Salim El Kazzi,Di Lin,Pieter Lagrain,Paola Favia,H. Bender,Nadine Collaert,K. De Meyer	2022	5
5	A Scalable One Dimensional Silicon Qubit Array with Nanomagnets George Simion,Fahd A. Mohiyaddin,Ruoyu Li,Florentina Piciu,Diego A. Echeverri Marín,Arul Baskar,Florin Ciubotaru,Stefan Kubicek,Julien Jussot,B. T. Chan,Ts. Ivanov,Clément Godfrin,A. Spessot,Prachand Man Pradhan,B. Govoreanu,Iuliana Radu	2020	4
6	A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration Ruoyu Li,Diego A. Echeverri Marín,Stefan Kubicek,Julien Jussot,B. T. Chan,Fahd A. Mohiyaddin,Arul Baskar,Florentina Piciu,George Simion,Clément Godfrin,Olimjonov Ortigʻali Orifjon oʻgʻli,Ts. Ivanov,L. Goux,B. Govoreanu,Iuliana Radu	2020	22
7	Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices Fahd A. Mohiyaddin,George Simion,Diego A. Echeverri Marín,Ruoyu Li,Florin Ciubotaru,Geert Eneman,F. M. Bufler,Stefan Kubicek,Julien Jussot,B. T. Chan,Ts. Ivanov,A. Spessot,Prachand Man Pradhan,Jaeyoung Lee,B. Govoreanu,Kevin Lauderdale	2019	15
8	Record performance Top-down In<inf>0.53</inf>Ga<inf>0.47</inf>As vertical nanowire FETs and vertical nanosheets Juhi Bhayani,Ts. Ivanov,V. Putcha,A. Alian,A. Sibaja-Hernandez,R. Rooyackers,柏平,Alexey Milenin,Austin Morris,Salim El Kazzi,A. Veloso,Dennis Lin,Pieter Lagrain,Paola Favia,Nadine Collaert,K. De Meyer	2017	6
9	Top-down InGaAs nanowire and fin vertical FETs with record performance Juhi Bhayani,Ts. Ivanov,柏平,Nan Sun,J. Franco,A. Sibaja-Hernandez,R. Rooyackers,A. Alian,Roger Loo,A. Veloso,Alexey Milenin,Dennis Lin,Paola Favia,H. Bender,Nadine Collaert,A. V-Y. Thean,K. De Meyer	2016	7
10	Vertical devices for future nano-electronic applications Nadine Collaert,A. Veloso,Trong Huynh-Bao,Dmitry Yakimets,Ts. Ivanov,Juhi Bhayani,Prachand Man Pradhan,A. Sibaja-Hernandez,Muhammad Agung Trimono,Clément Merckling,Niamh Waldron,Aaron Thean	2016	1
11	Investigation of laser-induced ablation of ceramic materials for spaceborne applications Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Christian Hünemörder,Han Dan,Minghao Li,Wolfgang Riede,Eduardo Stern,Я. С. Шур,Ts. Ivanov,Joana Alves,Jorge Piris,Gyatso Bista,Denny Wernham	2016	2
12	Al₂O₃/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd₂O₃and Sc₂O₃Interfacial Layers by Atomic Layer Deposition ECS Journal of Solid State Science and Technology ·Matias Roanec,Laura Nyns,Sonja Sioncke,Dong Lin,Ts. Ivanov,Thierry Conard,Johan Meersschaut,M. Y. Feteha,Sven Van Elshocht,Annelies Delabie	2014	18
13	Si cap passivation for Ge nMOS applications Microelectronic Engineering ·Sonja Sioncke,Wendy Vanherle,Ebtesam M. Abdurabbah,K Lenz,Ts. Ivanov,Dennis Lin,Laura Nyns,Annelies Delabie,Thierry Conard,Herbert Struyf,Stefan De Gendt,Matty Caymax,Nadine Collaert,Aaron Thean	2013	6
14	A 0.16 μm modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs Michael S. Carroll,Ts. Ivanov,И. Р. Саттаров,Duy P. Nguyen,Chün-chieh Huang,H Tukada,L. F. Lee,W.T. Cochran	2003	1
15	A 50-GHz 0.25-μm high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems И. Р. Саттаров,Ts. Ivanov,Michael S. Carroll,W. Nagy,S. Dobbertin,S. V. Zhdanova	2002	0
16	A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs И. Р. Саттаров,Michael S. Carroll,Ts. Ivanov,孙志岩,W. Nagy,S. Chaudhry,Manuela Malatesta,V.D. Archer,K.K. Ng,Jan Zlatník,邦夫石橋,M. Frei,I.C. Kizilyalli,Ru Huang,Abishek Bebito A,Justyna Żychlińska,W.T. Cochran,Nestor Tomas Auza	2002	8
17	Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI IEEE Electron Device Letters ·M. Mastrapasqua,Pierpaolo Palestri,A. Pacelli,G. K. Celler,M. Frei,Peter G. R. Smith,Wayne Johnson,Hatice Bay,Wei‐Chun Lin,Ts. Ivanov,Michael S. Carroll,I.C. Kizilyalli,C. A. King	2002	4
18	BiCMOS technology for mixed-digital, analog, and RF applications IEEE Microwave Magazine ·Т. А. Бутенко,Michael S. Carroll,M. Frei,Ts. Ivanov,M. Mastrapasqua,S. Moinian,孙志岩,C. A. King,陈星桥,J. De Blauwe,Mandlenkosi Robert Khumalo,V.D. Archer,K.K. Ng	2002	12
19	Si-MMIC BiCMOS low-noise high-linearity amplifiers for base station applications Olga Borić-Lubecke,Jenshan Lin,Ts. Ivanov,Ran Yan	2002	8
20	COM2 enhanced graded base SiGe technology for high speed applications Ts. Ivanov,Lai J K L,Tongiiui Wang,Rebecca Burden,Juergen Arras,Cleon Marion Mobley,Li Aoxue,M. Wasef Al Sebai,Yu-jun Xin,Arham Mehta,Aufan Lisan Shidqi,Gabi Baier,Jorge da Cunha Dutra,C. A. King,Abdullah Hamad,João Carlos Simões	2002	1

About Ts. Ivanov

Ts. Ivanov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Artificial Intelligence, having authored 24 papers that have together received 204 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (16 papers), Semiconductor materials and devices (10 papers), Radio Frequency Integrated Circuit Design (7 papers), Quantum and electron transport phenomena (7 papers), Quantum Computing Algorithms and Architecture (5 papers), 3D IC and TSV technologies (3 papers), Nanowire Synthesis and Applications (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (83 citations), Electrical and Electronic Engineering (145 citations) and Condensed Matter Physics (19 citations). Ts. Ivanov has collaborated with scholars based in Belgium, United States and Singapore. Frequent co-authors include B. Govoreanu, Julien Jussot, Iuliana Radu, Massimo Mongillo, Daniel Pérez Lozano, Fahd A. Mohiyaddin, Anton Potočnik, Danny Wan, Stefan Kubicek and George Simion. Their work appears in journals such as Physical Review Applied, IEEE Electron Device Letters, Microelectronic Engineering, Nature Electronics and Nature.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact