T. Poiroux

3.7k total citations
125 papers, 2.1k citations indexed

About

T. Poiroux is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Poiroux has authored 125 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 123 papers in Electrical and Electronic Engineering, 21 papers in Biomedical Engineering and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Poiroux's work include Semiconductor materials and devices (117 papers), Advancements in Semiconductor Devices and Circuit Design (108 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). T. Poiroux is often cited by papers focused on Semiconductor materials and devices (117 papers), Advancements in Semiconductor Devices and Circuit Design (108 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). T. Poiroux collaborates with scholars based in France, Switzerland and United States. T. Poiroux's co-authors include S. Deleonibus, O. Faynot, M. Vinet, M. Cassé, Sylvain Barraud, O. Rozeau, B. Prévitali, R. Coquand, J. Widiez and T. Ernst and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

T. Poiroux

115 papers receiving 2.0k citations

Peers

Countries citing papers authored by T. Poiroux

Since Specialization

Citations

This map shows the geographic impact of T. Poiroux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Poiroux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Poiroux more than expected).

Fields of papers citing papers by T. Poiroux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Poiroux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Poiroux. The network helps show where T. Poiroux may publish in the future.

Co-authorship network of co-authors of T. Poiroux

This figure shows the co-authorship network connecting the top 25 collaborators of T. Poiroux. A scholar is included among the top collaborators of T. Poiroux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Poiroux. T. Poiroux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K 2020 ·Applied Physics Letters ·M. Cassé, Bruna Cardoso Paz, G. Ghibaudo, T. Poiroux, Emmanuel Vincent, Philippe Galy, A. Juge, F. Gaillard, S. De Franceschi, Tristan Meunier, Maud Vinet	13
2	On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature 2020 ·Solid-State Electronics ·(unknown), (unknown), M. Cassé, S. Martinie, T. Poiroux, F. Balestra	49
3	Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance 2020 ·IEEE Transactions on Electron Devices ·M. Cassé, Bruna Cardoso Paz, G. Ghibaudo, T. Poiroux, Sylvain Barraud, M. Vinet, S. De Franceschi, (unknown), F. Gaillard	12
4	Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application 2020 ·SPIRE - Sciences Po Institutional REpository ·(unknown), S. Martinie, François Triozon, T. Poiroux, M. Vinet, G. Ghibaudo	6
5	Total Ionizing Dose Effects in FDSOI Compact Model for IC Design 2019 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), Marc Gaillardin, C. Marcandella, O. Rozeau, J. Lacord, J. C. Barbé, T. Poiroux, G. Hubert	7
6	Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability 2018 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), T. Poiroux, P. Scheer, A. Juge, (unknown), (unknown)	3
7	Enhanced design performance thanks to adaptative body biasing technique in FDSOI technolologies 2017 ·F. Arnaud, Sylvain Clerc, S. Haendler, (unknown), Philippe Flatresse, V. Huard, T. Poiroux	10
8	Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs 2013 ·Solid-State Electronics ·B. Sklénard, P. Batude, Quentin Rafhay, Ignacio Martin‐Bragado, (unknown), B. Prévitali, B. Colombeau, (unknown), S. Cristoloveanu, P. Rivallin, C. Tavernier, T. Poiroux	1
9	Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor 2013 ·Solid-State Electronics ·Veeresh Deshpande, Sylvain Barraud, X. Jehl, R. Wacquez, M. Vinet, R. Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, B. Prévitali, P. Perreau, T. Poiroux, M. Sanquer, O. Faynot	22
10	Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities 2012 ·Veeresh Deshpande, Sylvain Barraud, X. Jehl, R. Wacquez, M. Vinet, R. Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, B. Prévitali, P. Perreau, T. Poiroux, M. Sanquer, O. Faynot	10
11	Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires 2012 ·M. Cassé, Sylvain Barraud, C. Le Royer, Masahiro Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold	9
12	Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs 2012 ·IEEE Electron Device Letters ·Nuo Xu, Byron Ho, F. Andrieu, Lee Smith, Bich-Yen Nguyen, O. Weber, T. Poiroux, Olivier Faynot, Tsu‐Jae King Liu	22
13	Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length 2011 ·Symposium on VLSI Technology ·P. Batude, M. Vinet, Chuan Xu, B. Prévitali, C. Tabone, C. Le Royer, L. Sanchez, L. Baud, Laurent Brunet, A. Toffoli, F. Allain, D. Lafond, F. Aussenac, Ο. Thomas, T. Poiroux, O. Faynot	13
14	Drain current variability and MOSFET parameters correlations in planar FDSOI technology 2011 ·(unknown), O. Weber, F. Andrieu, F. Allain, L. Tosti, L. Brévard, O. Rozeau, M.-A. Jaud, P. Perreau, C. Fenouillet-Béranger, (unknown), B. Colombeau, (unknown), G. Ghibaudo, Marie‐Pierre Belleville, O. Faynot, T. Poiroux	21
15	Stress-induced performance enhancement in Si ultra-thin body FD-SOI MOSFETs: Impacts of scaling 2011 ·Nuo Xu, F. Andrieu, Jaeseok Jeon, Xin Sun, O. Weber, T. Poiroux, Bich-Yen Nguyen, Olivier Faynot, Tsu‐Jae King Liu	2
16	Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain 2009 ·IEEE Electron Device Letters ·M. Vinet, T. Poiroux, Christophe Licitra, J. Widiez, (unknown), B. Prévitali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, S. Deleonibus	10
17	Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology 2009 ·IEEE Transactions on Electron Devices ·V. Barral, T. Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean‐Luc Autran, S. Deleonibus	33
18	Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET 2006 ·TechConnect Briefs ·J. Jomaah, P. Martin, T. Poiroux, Marina Reyboz, O. Rozeau	6
19	Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric 2006 ·J. Widiez, M. Vinet, B. Guillaumot, T. Poiroux, D. Lafond, P. Holliger, O. Weber, V. Barral, B. Prévitali, F. Martín, M. Mouis, S. Deleonibus	2
20	New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides 2002 ·J. Pretet, Takuma Matsumoto, T. Poiroux, S. Cristoloveanu, R. Gwoziecki, (unknown), (unknown), H. Brut	55

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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