P. Besson

1.8k total citations
74 papers, 793 citations indexed

About

P. Besson is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, P. Besson has authored 74 papers receiving a total of 793 indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 14 papers in Biomedical Engineering. Recurrent topics in P. Besson's work include Semiconductor materials and devices (53 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). P. Besson is often cited by papers focused on Semiconductor materials and devices (53 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). P. Besson collaborates with scholars based in France, Czechia and India. P. Besson's co-authors include O. Renault, F. Martín, N. Barrett, J.-F. Damlencourt, D. Blin, S. Marthon, Jean‐Michel Hartmann, V. Loup, S. Deleonibus and N. Rochat and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

P. Besson

69 papers receiving 765 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Besson France 14 722 228 141 119 82 74 793
G. Pavia Italy 12 495 0.7× 358 1.6× 127 0.9× 63 0.5× 89 1.1× 46 658
Howard R. Huff United States 19 1.1k 1.6× 347 1.5× 201 1.4× 109 0.9× 80 1.0× 92 1.2k
C. Hobbs United States 15 781 1.1× 287 1.3× 118 0.8× 62 0.5× 71 0.9× 46 826
J.-F. Damlencourt France 16 1.0k 1.4× 414 1.8× 198 1.4× 198 1.7× 57 0.7× 33 1.1k
M. A. Blauw Netherlands 14 597 0.8× 181 0.8× 98 0.7× 171 1.4× 113 1.4× 32 678
Steven Consiglio United States 15 729 1.0× 419 1.8× 98 0.7× 61 0.5× 138 1.7× 78 824
Valdas Jokubavičius Sweden 15 535 0.7× 405 1.8× 114 0.8× 70 0.6× 210 2.6× 61 747
Katsunori Makihara Japan 12 496 0.7× 338 1.5× 219 1.6× 124 1.0× 75 0.9× 130 615
Shun-ichiro Ohmi Japan 16 1.1k 1.6× 411 1.8× 420 3.0× 119 1.0× 92 1.1× 145 1.3k
Saime Şebnem Çetin Türkiye 13 309 0.4× 231 1.0× 163 1.2× 77 0.6× 87 1.1× 30 462

Countries citing papers authored by P. Besson

Since Specialization
Citations

This map shows the geographic impact of P. Besson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Besson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Besson more than expected).

Fields of papers citing papers by P. Besson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Besson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Besson. The network helps show where P. Besson may publish in the future.

Co-authorship network of co-authors of P. Besson

This figure shows the co-authorship network connecting the top 25 collaborators of P. Besson. A scholar is included among the top collaborators of P. Besson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Besson. P. Besson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Loup, V., et al.. (2020). Wet and Siconi® Surface Preparation Sequences for SiGe Epitaxial Regrowth. ECS Meeting Abstracts. MA2020-02(24). 1729–1729.
2.
3.
Loup, V., L. Vallier, M. Martin, et al.. (2017). Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels. Microelectronic Engineering. 187-188. 84–89. 10 indexed citations
4.
5.
Schwarzenbach, W., D. Delprat, J. Widiez, et al.. (2015). High Mobility Materials on Insulator for Advanced Technology Nodes. ECS Transactions. 66(4). 31–37. 1 indexed citations
6.
Besson, P., et al.. (2014). Backside and Bevel Contamination Removal. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 219. 272–275.
7.
Loup, V., et al.. (2013). Si and Sige Alloys Wet Etching Using Tmah Chemistry. ECS Meeting Abstracts. MA2013-02(30). 2101–2101. 2 indexed citations
8.
Vinet, M., T. Poiroux, Christophe Licitra, et al.. (2009). Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain. IEEE Electron Device Letters. 30(7). 748–750. 10 indexed citations
9.
Batude, P., X. Garros, L. Clavelier, et al.. (2007). Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks. Journal of Applied Physics. 102(3). 38 indexed citations
10.
Barrett, N., O. Renault, P. Besson, Y. Le Tiec, & F. Martín. (2006). Band offsets of nitrided ultrathin hafnium silicate films. Applied Physics Letters. 88(16). 10 indexed citations
11.
Broussous, Lucile, et al.. (2005). Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 249–254. 1 indexed citations
12.
Rochat, N., et al.. (2003). Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2961–2965. 14 indexed citations
13.
Ducroquet, F., T. Ernst, O. Weber, et al.. (2003). Electrical properties of Si1−yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs. Applied Surface Science. 224(1-4). 274–277. 2 indexed citations
14.
Broussous, Lucile, et al.. (2003). Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 92. 263–266. 7 indexed citations
15.
Gentile, P., et al.. (2003). STM study of ultra-thin (<2 nm) silicon oxide. Journal of Non-Crystalline Solids. 322(1-3). 174–178. 4 indexed citations
16.
Rouchon, D., et al.. (2002). Study of ultrathin silicon oxide films by FTIR‐ATR and ARXPS after wet chemical cleaning processes. Surface and Interface Analysis. 34(1). 445–450. 28 indexed citations
17.
Sotta, D., E. Hadji, N. Magnéa, et al.. (2002). Resonant optical microcavity based on crystalline silicon active layer. Journal of Applied Physics. 92(4). 2207–2209. 11 indexed citations
18.
Quesnel, Etienne, et al.. (2002). Reduction of defect density on blanks: application to the extreme ultraviolet lithography. Microelectronic Engineering. 61-62. 203–211. 1 indexed citations
19.
Besson, P., et al.. (2001). Low Consumption Front End of the Line Cleaning: LC-FEOL. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 76-77. 199–202. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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