G. Reimbold

3.7k total citations
214 papers, 2.2k citations indexed

About

G. Reimbold is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, G. Reimbold has authored 214 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 213 papers in Electrical and Electronic Engineering, 30 papers in Electronic, Optical and Magnetic Materials and 26 papers in Materials Chemistry. Recurrent topics in G. Reimbold's work include Semiconductor materials and devices (188 papers), Advancements in Semiconductor Devices and Circuit Design (148 papers) and Integrated Circuits and Semiconductor Failure Analysis (73 papers). G. Reimbold is often cited by papers focused on Semiconductor materials and devices (188 papers), Advancements in Semiconductor Devices and Circuit Design (148 papers) and Integrated Circuits and Semiconductor Failure Analysis (73 papers). G. Reimbold collaborates with scholars based in France, Switzerland and Brazil. G. Reimbold's co-authors include G. Ghibaudo, X. Garros, B. Guillaumot, M. Cassé, F. Martín, B. De Salvo, F. Boulanger, C. Leroux, Jérôme Mitard and L. Arnaud and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

G. Reimbold

205 papers receiving 2.1k citations

Peers

Countries citing papers authored by G. Reimbold

Since Specialization

Citations

This map shows the geographic impact of G. Reimbold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Reimbold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Reimbold more than expected).

Fields of papers citing papers by G. Reimbold

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Reimbold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Reimbold. The network helps show where G. Reimbold may publish in the future.

Co-authorship network of co-authors of G. Reimbold

This figure shows the co-authorship network connecting the top 25 collaborators of G. Reimbold. A scholar is included among the top collaborators of G. Reimbold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Reimbold. G. Reimbold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy 2017 ·Japanese Journal of Applied Physics ·(unknown), Matthew Charles, Yannick Baines, Julien Buckley, (unknown), C. Gillot, G. Reimbold	13
2	From double to triple gate: Modeling junctionless nanowire transistors 2015 ·Bruna Cardoso Paz, Marcelo Antonio Pavanello, M. Cassé, Sylvain Barraud, G. Reimbold, Olivier Faynot, (unknown), A. Cerdeira	5
3	(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors 2014 ·ECS Transactions ·(unknown), M. Cassé, G. Reimbold, (unknown), F. Andrieu, D. Rideau, (unknown), M. Juhel, (unknown), G. Ghibaudo, C. Tavernier	1
4	Sheet resistance measurement on AlGaN/GaN wafers and dispersion study 2013 ·Microelectronic Engineering ·(unknown), C. Leroux, Matthew Charles, A. Torres, E. Morvan, D. Blachier, G. Ghibaudo, Edwige Bano, G. Reimbold	5
5	(Invited) Strain-Enhanced Performance of Si-Nanowire FETs 2013 ·ECS Transactions ·M. Cassé, Sylvain Barraud, R. Coquand, Masahiro Koyama, David Cooper, C. Vizioz, C. Comboroure, P. Perreau, V. Maffini-Alvaro, C. Tabone, L. Tosti, S. Barnola, V. Delaye, F. Aussenac, G. Ghibaudo, Hiroshi Iwai, G. Reimbold	4
6	Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs 2012 ·Masahiro Koyama, M. Cassé, R. Coquand, Sylvain Barraud, Hiroshi Iwai, G. Ghibaudo, G. Reimbold	7
7	Analysis of resistivity in nano-interconnect: full range (4.2-300 K) temperature characterization 2004 ·(unknown), L. Arnaud, Thierry Mourier, M. Fayolle, (unknown), G. Reimbold	7
8	A new physical model for NVM data-retention time-to-failure 2003 ·B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, P. Candelier, G. Reimbold	2
9	Gate oxide integrity testing on SOI wafers without test structure fabrication 2002 ·(unknown), (unknown), G. Reimbold, H. Moriceau, T. Barge, A.J. Auberton‐Hervé	0
10	Investigation of HfO2 Dielectric Stacks Deposited by ALD with a Mercury Probe 2002 ·X. Garros, C. Leroux, D. Blin, J.-F. Damlencourt, (unknown), G. Reimbold	7
11	Analysis of oxide breakdown mechanism occurring during ESD pulses 2002 ·Cédric Leroux, Philippe Andreucci, G. Reimbold	14
12	Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects 2002 ·Journal of Applied Physics ·L. Arnaud, (unknown), G. Reimbold	61
13	Investigation of Dynamic Memory Effects in Si-dot Devices 2000 ·B. De Salvo, A.J.S. Fernandes, (unknown), B. Guillaumot, T. Baron, G. Reimbold	6
14	Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling 2000 ·Microelectronics Reliability ·R. Clerc, (unknown), G. Ghibaudo, C. Caillat, G. Guégan, G. Reimbold, G. Pananakakis	8
15	Study of stress induced leakage current by using high resolution measurements 1999 ·Microelectronics Reliability ·B. De Salvo, G. Ghibaudo, (unknown), (unknown), G. Reimbold	4
16	A new extrapolation law for data-retention time-to-failure of nonvolatile memories 1999 ·IEEE Electron Device Letters ·B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, P. Candelier, G. Reimbold	16
17	Experimental and theoretical investigation of nonvolatile memory data-retention 1999 ·IEEE Transactions on Electron Devices ·B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, (unknown), B. Guillaumot, P. Candelier	55
18	Doping Measurements in Thin Silicon‐On‐Insulator Films 1999 ·Journal of The Electrochemical Society ·(unknown), (unknown), (unknown), (unknown), G. Reimbold	1
19	Thinning Oxide-Nitride-Oxide Interpoly Dielectric (11-13nm) for 0.25 um Flash Cell Memories 1997 ·European Solid-State Device Research Conference ·P. Candelier, B. De Salvo, F. Martín, B. Guillaumot, (unknown), G. Reimbold	4
20	Building in reliability with latch-up, ESD and hot carrier effects on a 0.25 um CMOS technology 1997 ·European Solid-State Device Research Conference ·(unknown), (unknown), G. Reimbold, D. Blachier, G. Guégan, M. Bonis	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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