Y. Morand

1.4k total citations
72 papers, 741 citations indexed

About

Y. Morand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Y. Morand has authored 72 papers receiving a total of 741 indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Y. Morand's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). Y. Morand is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). Y. Morand collaborates with scholars based in France, Czechia and Switzerland. Y. Morand's co-authors include L. Clavelier, Benjamin Vincent, C. Vizioz, J.-F. Damlencourt, S. Deleonibus, T. Poiroux, T. Skotnicki, S. Monfray, R. Pantel and S. Cristoloveanu and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

Y. Morand

67 papers receiving 702 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Morand France 16 690 191 106 102 95 72 741
Y. Arimoto Japan 12 876 1.3× 247 1.3× 96 0.9× 318 3.1× 77 0.8× 67 1.1k
Daisuke Kosemura Japan 14 522 0.8× 268 1.4× 110 1.0× 168 1.6× 38 0.4× 72 602
R. Dettmer United States 11 445 0.6× 101 0.5× 99 0.9× 142 1.4× 179 1.9× 41 567
N. Owada Japan 9 214 0.3× 126 0.7× 60 0.6× 77 0.8× 140 1.5× 24 306
B. Ebersberger Germany 11 436 0.6× 122 0.6× 256 2.4× 118 1.2× 56 0.6× 26 540
P. Ronsheim United States 11 353 0.5× 87 0.5× 130 1.2× 108 1.1× 24 0.3× 33 446
C. Deguet France 14 494 0.7× 197 1.0× 142 1.3× 144 1.4× 37 0.4× 34 565
D. Chidambarrao United States 12 398 0.6× 94 0.5× 132 1.2× 114 1.1× 35 0.4× 43 514
Matthew Lueck United States 15 566 0.8× 131 0.7× 179 1.7× 27 0.3× 56 0.6× 52 604
Marek E. Schmidt Japan 12 256 0.4× 146 0.8× 116 1.1× 194 1.9× 35 0.4× 40 415

Countries citing papers authored by Y. Morand

Since Specialization
Citations

This map shows the geographic impact of Y. Morand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Morand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Morand more than expected).

Fields of papers citing papers by Y. Morand

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Morand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Morand. The network helps show where Y. Morand may publish in the future.

Co-authorship network of co-authors of Y. Morand

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Morand. A scholar is included among the top collaborators of Y. Morand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Morand. Y. Morand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rack, Martin, Y. Morand, J. Lacord, et al.. (2022). High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications. Solid-State Electronics. 194. 108301–108301. 6 indexed citations
2.
Rack, Martin, Y. Morand, J. Lacord, et al.. (2021). High performance silicon-based substrate using buried PN junctions towards RF applications. SPIRE - Sciences Po Institutional REpository. 1–4. 4 indexed citations
3.
Coignus, J., L. Grenouillet, Nicolas Vaxelaire, et al.. (2018). Evaluation of Ferroelectricity in Si-implanted HfO<sub>2</sub> along Cycling.
4.
Reboh, S., C. Le Royer, Y. Morand, et al.. (2016). On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(10-12). 740–745. 2 indexed citations
5.
Nemouchi, F., V. Carron, Y. Morand, et al.. (2013). Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain. ECS Transactions. 50(9). 197–204. 3 indexed citations
6.
Carron, V., et al.. (2013). Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering. ECS Transactions. 58(9). 239–248. 3 indexed citations
7.
Vinet, M., T. Poiroux, Christophe Licitra, et al.. (2009). Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain. IEEE Electron Device Letters. 30(7). 748–750. 10 indexed citations
8.
Poiroux, T., M. Vinet, F. Nemouchi, et al.. (2009). Highly performant FDSOI pMOSFETs with metallic source/drain. 87. 88–89. 3 indexed citations
9.
Clavelier, L., C. Le Royer, Benjamin Vincent, et al.. (2007). High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers. 83. 19–20. 3 indexed citations
10.
11.
Carron, V., János L. Lábár, Magali Putero, et al.. (2007). Dopant Effect On NiGe Texture During Nickel Germanide Growth. ECS Transactions. 6(16). 49–59. 3 indexed citations
12.
13.
Mazoyer, P., S. Blonkowski, A. Farcy, et al.. (2004). MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels. 117–119. 2 indexed citations
14.
Morand, Y., M. Assous, M. Fayolle, et al.. (2002). Copper dual damascene integration using organic low k material: construction architecture comparison. 225–227. 1 indexed citations
15.
Arnaud, L., et al.. (2000). Electromigration characterization of damascene copper interconnects using normally and highly accelerated tests. Microelectronics Reliability. 40(8-10). 1311–1316. 6 indexed citations
16.
Bermond, C., et al.. (2000). Performance Characterization of Advanced Interconnects on High Speed VLSI Circuits. 216–219. 1 indexed citations
17.
Morand, Y., et al.. (1998). Advanced interconnect scheme analysis: real impact of technological improvements. 837–840. 2 indexed citations
18.
Morand, Y., et al.. (1997). Copper Integration In Self Aligned Dual Damascene Architecture. Symposium on VLSI Technology. 31–32. 6 indexed citations
19.
Bauza, D., et al.. (1989). Effect of sputter-etching conditions on the barrier characteristics and the process-induced defects in (Ti-W)/Si Schottky diodes. Materials Science and Engineering B. 4(1-4). 387–391. 3 indexed citations
20.
Morand, Y., et al.. (1989). Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology. Journal of The Electrochemical Society. 136(1). 238–241. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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