B. Sklénard

1.2k citations

48 papers · 388 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- 3D IC and TSV technologies
- Silicon and Solar Cell Technologies
Structural Biology

Papers in

Structural Biology 1
Electrical and Electronic Engineering 38
- Semiconductor materials and devices 22
- Silicon and Solar Cell Technologies 11
- Advanced Memory and Neural Computing 10
- Ferroelectric and Negative Capacitance Devices 9
- Thin-Film Transistor Technologies 6
- Chalcogenide Semiconductor Thin Films 5

Co-authors: P. Blaise Boubacar TraoréJing LiValério Olevano Ignacio Martin‐Bragado P. Batude Elisa Vianello Yoshio Nishi
Journals: Physical review. B. (5 papers)Applied Physics Letters (4 papers)Solid-State Electronics (4 papers)Materials Science in Semiconductor Processing (2 papers)Journal of Applied Physics (2 papers)
Partner nations: France Spain United States

In The Last Decade

B. Sklénard

45 papers receiving 385 citations

Peers

Countries citing papers authored by B. Sklénard

Since Specialization

Citations

This map shows the geographic impact of B. Sklénard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Sklénard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Sklénard more than expected).

Fields of papers citing papers by B. Sklénard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Sklénard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Sklénard. The network helps show where B. Sklénard may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Sklénard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Sklénard Line = papers co-authored together B. Sklénard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	2D material fab-scale transfer of 200 mm wafer using molecular direct bonding 2D Materials ·Paul Brunet, S. Kitt, B. Sklénard, Elmi Joy, Frank Fournel, GUO Haoqian, Stéphane Cadot, A. Dyotte, Nicolas Gauthier, Safi Ullah Nasir, D. Mariolle, Carme Urgellès Bello	2025	1
2	Revisiting the extraction of coupling strengths for polaron hopping from an ab initio approach Physical review. B. ·B Tehan, B. Sklénard, А.А. Саметова, François Triozon, Jing Li	2025	0
3	Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing Materials Science in Semiconductor Processing ·S. Kerdilès, 胡健女, 黄开国, Charnai Sherry, B. Sklénard, E.S. Buss, Paweł Piotr Michałowski	2024	0
4	Electronic polarization effects in core-level spectroscopy Physical review. B. ·Enrique Martínez Lozano, Gabriele D’Avino, B. Sklénard, Valério Olevano, Jing Li	2024	1
5	Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian Applied Physics Letters ·Matteo Giusto, B. Sklénard, Wolfgang Goes, P. Blaise, François Triozon, Jing Li	2024	1
6	A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys SPIRE - Sciences Po Institutional REpository ·R. Miquel, Nadia Nourin, Н Жаргалсайхан, B. Sklénard, Mathis Plapp	2023	1
7	Variability in Si/SiGe and Si/SiO₂ Spin Qubits due to Interfacial Disorder SPIRE - Sciences Po Institutional REpository ·H. Bahrasemani, B. Sklénard, Andrei Cristian Spataru, Jing Li, Yuliya Likhosherst, Zitny Milan, Yann‐Michel Niquet, Tibor Grasser	2023	1
8	Oxygen vacancy and hydrogen in amorphous HfO₂ Journal of Physics D Applied Physics ·B. Sklénard, H. Bahrasemani, Dominic Waldhoer, Jing Li	2023	3
9	XPS Core-Level Chemical Shift by Ab Initio Many-Body Theory The Journal of Physical Chemistry A ·孝一片岡, 久徳坂井, B. Sklénard, Valério Olevano, Jing Li	2023	14
10	Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits Physical review. B. ·Е. С. Смышляева, J. C. Abadillo-Uriel, Zitny Milan, Shreyas Pardeshi, Jing Li, B. Sklénard, Yann‐Michel Niquet	2023	12
11	Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate SPIRE - Sciences Po Institutional REpository ·G. Navarro, C. Sabbione, 黄邦杰, Sergei I. Shchekoldin, M. Frei, 姜志英, Nagahashi Taiji, F. Fillot, Nicolas Bernier, Francisco Edilberto Rodrigues de Farias, B. Sklénard, Linda Eklöf, Sébastien Martin, N. Castellani, G. Bourgeois, Yu-Chang Lee, F. Andrieu	2022	3
12	Ab initio study of electron mobility in V2O5 via polaron hopping Solid-State Electronics ·Hengkun Yu, B. Sklénard, M. Guillaumont, Jing Li, Michel Freyss	2022	8
13	Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·幸雄薮内, X. Garros, P. Batude, E.S. Buss, J. Lacord, B. Sklénard, V. Lapras, C. Fenouillet-Béranger, Charnai Sherry, Ruey-Ji Wu, 信夫渡辺, R. Kies, Fu DengWei, R. M. Litaker, Beatrice Nordlöf, F. Cavallari, Keerthana Santhosh, 宗彦森下	2022	1
14	Collective dipole effects in ionic transport under electric fields Nature Communications ·Shenguo Xu, Layla Martin‐Samos, Stefano de Gironcoli, Luigi Giacomazzi, Matjaž Valant, Anne Hémeryck, Patrick Blaise, B. Sklénard, N. Richard	2020	8
15	Quantitative Mapping of the Charge Density in a Monolayer of MoS₂ at Atomic Resolution by Off-Axis Electron Holography ACS Nano ·Victor Boureau, B. Sklénard, Robert R. McLeod, Dmitry Ovchinnikov, Dumitru Dumcenco, András Kis, David Cooper	2019	11
16	RF Performance of a Fully Integrated 3D Sequential Technology SPIRE - Sciences Po Institutional REpository ·X. Garros, J. Lacord, A A Svavitskaya, F. Andrieu, G. Ghibaudo, F. Gaillard, F. Cavallari, Laurent Brunet, 王成阔, P. Batude, C. Fenouillet-Béranger, M. Cassé, B. Sklénard, P. Scheiblin	2019	3
17	Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain Physical Review Letters ·Koos Spreen Brouwer, Paolo Conti, Zaiping Zeng, J. Jarryd, Patrice Bertet, Michael W. Swift, Chris G. Van de Walle, M. L. W. Thewalt, B. Sklénard, Yann‐Michel Niquet, Wendell Albuquerque	2018	32
18	The coupled atom transistor Journal of Physics Condensed Matter ·X. Jehl, B. Voisin, B. Roche, Eva Dupont-Ferrier, S. De Franceschi, M. Sanquer, Manuel Cobián, Yann‐Michel Niquet, B. Sklénard, O. Cueto, R. Wacquez, M. Vinet	2015	4
19	Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Solid-State Electronics ·B. Sklénard, P. Batude, Quentin Rafhay, Ignacio Martin‐Bragado, 于文霖, B. Prévitali, B. Colombeau, Fatemeh Naderi Safa, S. Cristoloveanu, P. Rivallin, C. Tavernier, T. Poiroux	2013	1
20	Atomistic investigation of the impact of stress during solid phase epitaxial regrowth Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·B. Sklénard, N. Čiukšiené, P. Batude, P. Rivallin, C. Tavernier, S. Cristoloveanu, Ignacio Martin‐Bragado	2013	2

About B. Sklénard

B. Sklénard is a scholar working on Structural Biology, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Condensed Matter Physics, having authored 48 papers that have together received 388 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Silicon and Solar Cell Technologies (11 papers), Advanced Memory and Neural Computing (10 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Quantum and electron transport phenomena (6 papers), Phase-change materials and chalcogenides (6 papers), Thin-Film Transistor Technologies (6 papers) and Chalcogenide Semiconductor Thin Films (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (314 citations), Structural Biology (7 citations), Atomic and Molecular Physics, and Optics (87 citations), Materials Chemistry (121 citations) and Polymers and Plastics (27 citations). B. Sklénard has collaborated with scholars based in France, Spain and United States. Frequent co-authors include P. Blaise, Boubacar Traoré, Jing Li, Valério Olevano, Ignacio Martin‐Bragado, P. Batude, Elisa Vianello, Yoshio Nishi, G. Molas and François Triozon. Their work appears in journals such as Physical review. B., Applied Physics Letters, Solid-State Electronics, Materials Science in Semiconductor Processing and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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