V. Huard

3.9k total citations · 1 hit paper
124 papers, 2.2k citations indexed

About

V. Huard is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. Huard has authored 124 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 113 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. Huard's work include Semiconductor materials and devices (99 papers), Advancements in Semiconductor Devices and Circuit Design (83 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). V. Huard is often cited by papers focused on Semiconductor materials and devices (99 papers), Advancements in Semiconductor Devices and Circuit Design (83 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). V. Huard collaborates with scholars based in France, India and Switzerland. V. Huard's co-authors include M. Denais, C. Parthasarathy, A. Bravaix, C. Guérin, G. Ribes, X. Federspiel, F. Perrier, F. Cacho, Emmanuel Vincent and S. Tatarenko and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. Huard

121 papers receiving 2.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

NBTI degradation: From physical mechanisms to modelling

2005 393 citations V. Huard, M. Denais et al. Microelectronics Reliability profile →

Peers

Countries citing papers authored by V. Huard

Since Specialization

Citations

This map shows the geographic impact of V. Huard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Huard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Huard more than expected).

Fields of papers citing papers by V. Huard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Huard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Huard. The network helps show where V. Huard may publish in the future.

Co-authorship network of co-authors of V. Huard

This figure shows the co-authorship network connecting the top 25 collaborators of V. Huard. A scholar is included among the top collaborators of V. Huard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Huard. V. Huard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Industrial best practice: cases of study by automotive chip- makers 2021 ·(unknown), (unknown), (unknown), (unknown), (unknown), V. Huard, (unknown), Riccardo Cantoro, (unknown), (unknown), (unknown), Paolo Bernardi	1
2	Modeling self-heating effects in advanced CMOS nodes 2018 ·(unknown), A. Cros, X. Federspiel, Cheikh Ndiaye, V. Huard, M. Rafik	9
3	Enhanced design performance thanks to adaptative body biasing technique in FDSOI technolologies 2017 ·F. Arnaud, Sylvain Clerc, S. Haendler, (unknown), Philippe Flatresse, V. Huard, T. Poiroux	10
4	Enabling robust automotive electronic components in advanced CMOS nodes 2017 ·Microelectronics Reliability ·V. Huard, (unknown), F. Cacho, A. Bravaix	1
5	Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes 2016 ·Cheikh Ndiaye, V. Huard, (unknown), M. Rafik, X. Federspiel, A. Bravaix	12
6	Advances in industrial practices for optimal performance/reliability/power trade-off in commercial high-performance microprocessors for wireless applications 2013 ·V. Huard, F. Cacho, (unknown), (unknown), (unknown), (unknown), Steve Lecomte, (unknown), (unknown), (unknown), (unknown)	1
7	Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs 2011 ·A. Bravaix, V. Huard, D. Goguenheim, Emmanuel Vincent	30
8	Insights about reliability of Heterojunction Bipolar Transistor under DC stress 2010 ·F. Cacho, (unknown), (unknown), D. Roy, V. Huard	1
9	dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65nm technology 2009 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown), F. Mart́ınez, (unknown), M. Valenza, Emmanuel Vincent, V. Huard, (unknown)	1
10	Process Architecture for Spatial and Temporal Variability Improvement of SRAM Circuits at the 45nm Node 2008 ·N. Planes, V. Huard, C. Laviron, (unknown), (unknown), (unknown), S. Haendler, M. Haond, F. Bœuf	3
11	Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterization 2007 ·M. Rafik, X. Garros, G. Ribes, G. Ghibaudo, C. Hobbs, A. Zauner, Markus Müller, V. Huard, (unknown)	15
12	Single-Hole Detrapping Events in PMOSFETS NBTI Degradation 2006 ·V. Huard, C. Parthasarathy, M. Denais	13
13	New perspectives on NBTI in advanced technologies: modelling & characterization 2005 ·M. Denais, V. Huard, (unknown), G. Ribes, F. Perrier, D. Roy, A. Bravaix	15
14	New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing 2005 ·M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, M. Bidaud, G. Ribes, D. Barge, (unknown), B. Tavel, (unknown), F. Perrier, N. Revil, F. Arnaud, P.A. Stolk	7
15	Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study 2004 ·Microelectronic Engineering ·G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo	4
16	Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide 2004 ·M. Denais, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, N. Revil, A. Bravaix	9
17	New insights into the change of voltage acceleration and temperature activation of oxide breakdown 2003 ·Microelectronics Reliability ·G. Ribes, S. Bruyère, F. Monsieur, (unknown), V. Huard	8
18	Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides 2003 ·F. Monsieur, Emmanuel Vincent, G. Ribes, V. Huard, S. Bruyère, D. Roy, G. Pananakakis, G. Ghibaudo	1
19	Properties of a Fe/GaAs(001) hybrid structure grown by molecular-beam epitaxy 2002 ·Applied Physics Letters ·(unknown), V. Huard, Mark E. White, P. M. Petroff	36
20	Magneto-Optical Absorption Studies of Modulation-Doped CdTe and dMnTe Quantum Wells 2000 ·physica status solidi (a) ·V. Huard, R.T. Cox, K. Saminadayar, C. Bourgognon, Alexandre Arnoult, J. Cibért, S. Tatarenko, M. Potemski	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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