S. Deleonibus

5.0k total citations
217 papers, 2.9k citations indexed

About

S. Deleonibus is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Deleonibus has authored 217 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 210 papers in Electrical and Electronic Engineering, 36 papers in Biomedical Engineering and 35 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Deleonibus's work include Semiconductor materials and devices (199 papers), Advancements in Semiconductor Devices and Circuit Design (169 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). S. Deleonibus is often cited by papers focused on Semiconductor materials and devices (199 papers), Advancements in Semiconductor Devices and Circuit Design (169 papers) and Integrated Circuits and Semiconductor Failure Analysis (64 papers). S. Deleonibus collaborates with scholars based in France, Italy and Switzerland. S. Deleonibus's co-authors include M. Vinet, B. Prévitali, T. Poiroux, C. Le Royer, T. Ernst, O. Faynot, J. Widiez, F. Andrieu, C. Tabone and L. Clavelier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Deleonibus

203 papers receiving 2.8k citations

Peers

Countries citing papers authored by S. Deleonibus

Since Specialization

Citations

This map shows the geographic impact of S. Deleonibus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Deleonibus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Deleonibus more than expected).

Fields of papers citing papers by S. Deleonibus

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Deleonibus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Deleonibus. The network helps show where S. Deleonibus may publish in the future.

Co-authorship network of co-authors of S. Deleonibus

This figure shows the co-authorship network connecting the top 25 collaborators of S. Deleonibus. A scholar is included among the top collaborators of S. Deleonibus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Deleonibus. S. Deleonibus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	3D monolithic integration 2011 ·P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	18
2	Ultra-thin films and multigate devices architectures for future CMOS scaling 2011 ·Science China Information Sciences ·S. Deleonibus	2
3	Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain 2009 ·IEEE Electron Device Letters ·M. Vinet, T. Poiroux, Christophe Licitra, J. Widiez, (unknown), B. Prévitali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, S. Deleonibus	10
4	Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories 2008 ·Microelectronic Engineering ·G. Molas, M. Bocquet, Julien Buckley, H. Grampeix, M. Gély, (unknown), F. Martín, P. Brianceau, (unknown), (unknown), S. Lombardo, G. Pananakakis, G. Ghibaudo, B. De Salvo, S. Deleonibus	8
5	Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues 2008 ·IEEE Transactions on Electron Devices ·F. Mayer, C. Le Royer, D. Blachier, L. Clavelier, S. Deleonibus	6
6	First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage 2008 ·A. Pouydebasque, C. Le Royer, C. Tabone, K. Romanjek, E. Augendre, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, (unknown), R. Truche, L. Clavelier, S. Deleonibus	8
7	High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers 2007 ·L. Clavelier, (unknown), C. Le Royer, Benjamin Vincent, Y. Morand, Y. Campidelli, Jean‐Michel Hartmann, E. Martínez, (unknown), S. Cristoloveanu, S. Deleonibus, D. Bensahel	3
8	Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory 2007 ·S. Jacob, (unknown), S. Bodnar, R. Coppard, (unknown), (unknown), (unknown), B. De Salvo, L. Perniola, E. Jalaguier, F. Boulanger, S. Deleonibus	4
9	Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique 2007 ·Solid-State Electronics ·(unknown), M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, M. Vinet, S. Deleonibus	12
10	3D stacked channels: how series resistances can limit 3D devices performance 2007 ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, V. Maffini-Alvaro, F. Andrieu, (unknown), P. Rivallin, C. Vizioz, Y. Campidelli, (unknown), Jean‐Michel Hartmann, S. Borel, V. Delaye, A. Pouydebasque, (unknown), P. Coronel, T. Skotnicki, S. Deleonibus	7
11	Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit 2006 ·IEEE Transactions on Electron Devices ·F. Mayer, C. Le Royer, G. Le Carval, L. Clavelier, S. Deleonibus	42
12	Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy 2005 ·ePrints Soton (University of Southampton) ·A.M. Waite, (unknown), Karen L. Osman, Weiqun Zhang, T. Ernst, (unknown), (unknown), S. Deleonibus, P.L.F. Hemment, Darren M. Bagnall, A G R Evans, P. Ashburn	0
13	Single Electron EffectsandStructuralEffects in Ultrascaled Silicon Nanocrystal Floating-Gate Memories 2004 ·IEEE Transactions on Nanotechnology ·G. Molas, (unknown), G. Ghibaudo, D. Mariolle, A. Toffoli, N. Buffet, Rosaria A. Puglisi, S. Lombardo, S. Deleonibus	39
14	SiGe channel p-MOSFETs scaling-down 2004 ·F. Andrieu, T. Ernst, K. Romanjek, O. Weber, Charles Renard, Jean‐Michel Hartmann, A. Toffoli, (unknown), R. Truche, P. Holliger, L. Brévard, G. Ghibaudo, S. Deleonibus	12
15	Electrical properties of Si1−yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs 2003 ·Applied Surface Science ·F. Ducroquet, T. Ernst, O. Weber, Jean‐Michel Hartmann, V. Loup, P. Besson, L. Brévard, (unknown), S. Deleonibus	2
16	A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets 2000 ·IEEE Electron Device Letters ·S. Deleonibus, C. Caillat, G. Guégan, M. Heitzmann, (unknown), S. Tedesco, B. Dal’zotto, F. Martín, P. Mur, A.M. Papon, (unknown), (unknown), (unknown)	24
17	Coulomb blockade in low-mobility nanometer size Si MOSFET’s 2000 ·Physical review. B, Condensed matter ·M. Sanquer, Michael Specht, (unknown), S. Deleonibus, G. Guégan	36
18	The decananometer CMOS era - Is there CMOS after CMOS? 1999 ·European Solid-State Device Research Conference ·S. Deleonibus, C. Caillat, J. Gautier, (unknown), M. Heitzmann, F. Martín, S. Tedesco	1
19	65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation 1999 ·C. Caillat, S. Deleonibus, G. Guégan, S. Tedesco, B. Dal’zotto, M. Heitzmann, F. Martín, P. Mur, (unknown), F. Balestra	16
20	New Lifetime Prediction Method Based on the Control of the Secondary Impact Ionization with the Substrate Bias 1998 ·European Solid-State Device Research Conference ·(unknown), G. Ghibaudo, F. Balestra, (unknown), S. Deleonibus	4

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