P. Holliger

2.2k citations

67 papers · 1.8k indexed · h-index 23

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Inorganic Chemistry top 5%
- Radioactive element chemistry and processing

Papers in

Electrical and Electronic Engineering 50
- Semiconductor materials and devices 34
- Integrated Circuits and Semiconductor Failure Analysis 19
- Advancements in Semiconductor Devices and Circuit Design 16
- Thin-Film Transistor Technologies 9
- Silicon and Solar Cell Technologies 8
Computational Mechanics 17
- Ion-surface interactions and analysis 17

Co-authors: Jean‐Michel Hartmann G. Rolland F. Gauthier-Lafaye T. Billon P.-L. Blanc F. Laugier M.N. Séméria Anne‐Marie Papon
Journals: Journal of Crystal Growth (9 papers)Applied Surface Science (8 papers)Journal of Applied Physics (6 papers)Semiconductor Science and Technology (4 papers)Thin Solid Films (3 papers)
Partner nations: France United Kingdom United States

In The Last Decade

P. Holliger

67 papers receiving 1.7k citations

Peers

Countries citing papers authored by P. Holliger

Since Specialization

Citations

This map shows the geographic impact of P. Holliger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Holliger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Holliger more than expected).

Fields of papers citing papers by P. Holliger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Holliger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Holliger. The network helps show where P. Holliger may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Holliger, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Holliger Line = papers co-authored together P. Holliger links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®) Journal of Crystal Growth ·Kay F. Kiesler, Mónica Alonso Miño, A. Halimaoui, Y. Campidelli, D. Rouchon, Vladimir Gorev, P. Holliger, D. Bensahel	2009	28
2	Determination of strain within Si_1-yC_y layers grown by CVD on a Si Substrate MRS Proceedings ·N. Cherkashin, Kay F. Kiesler, F. Hüe, Florent Houdellier, Martin Hÿtch, E. Snoeck, Vincent Paillard, Mónica Alonso Miño, D. Rouchon, Vladimir Gorev, P. Holliger, A. Claverie	2007	1
3	Extended X-Ray Absorption Fine Structure Study of Arsenic in HgCdTe Journal of Electronic Materials ·Sébastien Plissard, G. Giusti, Sonja Hillerich, P. Ballet, A. Million, X. Biquard, E. Molva, Wesley Vander Ark, P. Holliger	2007	5
4	Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric J. Widiez, M. Vinet, B. Guillaumot, T. Poiroux, D. Lafond, P. Holliger, O. Weber, V. Barral, B. Prévitali, F. Martín, M. Mouis, S. Deleonibus	2006	2
5	Process damages in HfO/sub 2/TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals X. Garros, G. Reimbold, O. Louveau, P. Holliger, C. Hobbs, C. Leroux, Loan Pham-Nguyen, F. Martín, F. Boulanger	2006	2
6	Physico‐chemical study of the interfaces of Mo/Si multilayer interferential mirrors: correlation with the optical properties Surface and Interface Analysis ·A. Aikawa, Jean‐Marc André, J. Gautier, F. Bridou, Franck Delmotte, M. F. Ravet, P. Holliger, Philippe Jonnard	2006	6
7	Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water Applied Surface Science ·P. Holliger, C. Hobbs, D. Jalabert, F. Martín, F. Pierre, G. Reimbold, P. Rivallin	2006	1
8	Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors Journal of Crystal Growth ·Jean‐Michel Hartmann, P. Holliger, F. Laugier, G. Rolland, Claire Crousier, T. Ernst, T. Billon, Nathalie Vulliet	2005	20
9	Phase transition by Mg doping of N‐face polarity GaN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Eirini Sarigiannidou, E. Monroy, Martin Hermann, Thomas Andreev, P. Holliger, B Mocquet, JC Lo, B. Daudin, Martin Eickhoff	2005	2
10	SiGe channel p-MOSFETs scaling-down F. Andrieu, T. Ernst, K. Romanjek, O. Weber, Charles Renard, Jean‐Michel Hartmann, A. Toffoli, 悟志新子, R. Truche, P. Holliger, L. Brévard, G. Ghibaudo, S. Deleonibus	2004	12
11	Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Christophe Durand, C. Vallée, V. Loup, O. Salicio, C. Dubourdieu, S. Blonkowski, M. Bonvalot, P. Holliger, O. Joubert	2004	28
12	Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes MRS Proceedings ·Jean‐Michel Hartmann, Anne‐Marie Papon, P. Holliger, G. Rolland, T. Billon, Mathieu Rouvière, Laurent Vivien, S. Laval	2004	8
13	Modification of GaN(0001) growth kinetics by Mg doping Applied Physics Letters ·E. Monroy, Thomas Andreev, P. Holliger, E. Bellet‐Amalric, T. Shibata, Mitsuhiro Tanaka, B. Daudin	2004	38
14	Diffusion processes in NiTi/Si, NiTi/SiO2 and NiTi/Si3N4 systems under annealing Thin Solid Films ·Ignace Jarrige, P. Holliger, Philippe Jonnard	2004	22
15	Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates Journal of Crystal Growth ·Jean‐Michel Hartmann, Alexandra Abbadie, M. Vinet, L. Clavelier, P. Holliger, D. Lafond, M.N. Séméria, P. Gentile	2003	37
16	SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition Journal of Crystal Growth ·Jean‐Michel Hartmann, V. Loup, G. Rolland, P. Holliger, F. Laugier, C. Vannuffel, M.N. Séméria	2002	73
17	Influence of low thermal budget pre-anneals on the high temperature redistribution of low energy boron implants in silicon MRS Proceedings ·Bethany Castro, Marco Schott, D. Mathiot, P. Rivallin, P. Holliger, Lehua Zheng	2001	3
18	Organic matter and containment of uranium and fissiogenic isotopes at the Oklo natural reactors Nature ·Bartholomew Nagy, F. Gauthier-Lafaye, P. Holliger, Donald W. Davis, David J. Mossman, Joel S. Leventhal, Mark J. Rigali, John Parnell	1991	75
19	In situ U-Pb age determination by secondary ion mass spectrometry Chemical Geology ·P. Holliger, ‪Michel Cathelineau	1988	11
20	Stable lead isotopes ratios in major french rivers and estuaries The Science of The Total Environment ·Françoise Elbaz-Poulichet, P. Holliger, J.E. Martı́n, D. Petit	1986	87

About P. Holliger

P. Holliger is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Inorganic Chemistry and Condensed Matter Physics, having authored 67 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), Ion-surface interactions and analysis (17 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Semiconductor materials and interfaces (14 papers), Thin-Film Transistor Technologies (9 papers), Silicon and Solar Cell Technologies (8 papers) and Radioactive element chemistry and processing (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Inorganic Chemistry (246 citations), Atomic and Molecular Physics, and Optics (443 citations), Geochemistry and Petrology (80 citations) and Structural Biology (16 citations). P. Holliger has collaborated with scholars based in France, United Kingdom and United States. Frequent co-authors include Jean‐Michel Hartmann, G. Rolland, F. Gauthier-Lafaye, T. Billon, P.-L. Blanc, F. Laugier, M.N. Séméria, Anne‐Marie Papon, Y. Bogumilowicz and Alexandra Abbadie. Their work appears in journals such as Journal of Crystal Growth, Applied Surface Science, Journal of Applied Physics, Semiconductor Science and Technology and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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