J. Pretet

504 citations

21 papers · 314 indexed · h-index 9

Co-authors: S. Cristoloveanu S. Monfray T. Skotnicki C. Raynaud F. Allibert T. Poiroux A. Vandooren L. Mathew
Topics: Semiconductor materials and devices (21 papers)Advancements in Semiconductor Devices and Circuit Design (21 papers)Silicon Carbide Semiconductor Technologies (10 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Bioengineering
Journals: Applied Physics Letters IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: France United States Switzerland

In The Last Decade

J. Pretet

21 papers receiving 298 citations

Peers

Countries citing papers authored by J. Pretet

Since Specialization

Citations

This map shows the geographic impact of J. Pretet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Pretet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Pretet more than expected).

Fields of papers citing papers by J. Pretet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Pretet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Pretet. The network helps show where J. Pretet may publish in the future.

Co-authorship network of co-authors of J. Pretet

This figure shows the co-authorship network connecting the top 25 collaborators of J. Pretet. A scholar is included among the top collaborators of J. Pretet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Pretet. J. Pretet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate 2009 ·G. Guégan,(unknown),G. Molas,C. Raynaud,J. Pretet	2
2	New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate 2009 ·Solid-State Electronics ·G. Guégan,R. Gwoziecki,(unknown),C. Raynaud,J. Pretet,(unknown),(unknown),S. Deleonibus	2
3	New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate 2008 ·G. Guégan,R. Gwoziecki,(unknown),C. Raynaud,(unknown),J. Pretet,(unknown),(unknown)	4
4	Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate 2007 ·ECS Transactions ·G. Guégan,J. Pretet,R. Gwoziecki,(unknown),(unknown),(unknown),C. Raynaud,S. Deleonibus	3
5	Double Gate Coupling and Quantum Tunneling in Ultrathin SOI MOSFETs 2004 ·(unknown),A. Zaslavsky,Akiko Ohata,J. Pretet,S. Cristoloveanu,Serge Luryi,D. Mariolle,D. Fraboulet,S. Deleonibus	1
6	Silicon-on-Nothing MOSFETs: Performance, Short-Channel Effects, and Backgate Coupling 2004 ·IEEE Transactions on Electron Devices ·J. Pretet,S. Monfray,S. Cristoloveanu,T. Skotnicki	56
7	Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric 2004 ·J. Pretet,A. Vandooren,(unknown)	5
8	Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing 2004 ·Solid-State Electronics ·M. Cassé,J. Pretet,S. Cristoloveanu,T. Poiroux,C. Fenouillet-Béranger,(unknown),C. Raynaud,G. Reimbold	29
9	Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length 2004 ·Applied Physics Letters ·F. Allibert,J. Pretet,G. Pananakakis,S. Cristoloveanu	12
10	Low-temperature performance of ultimate si-based mOSFETs 2003 ·J. Jomaah,G. Ghibaudo,S. Cristoloveanu,A. Vandooren,(unknown),J. Pretet,F. Lime,K. Oshima,B. Guillaumot,F. Balestra	1
11	Coupling effects and channels separation in FinFETs 2003 ·Solid-State Electronics ·(unknown),J. Pretet,S. Cristoloveanu,A. Vandooren,L. Mathew,J. Jomaah,Bich-Yen Nguyen	54
12	New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides 2002 ·J. Pretet,Takuma Matsumoto,T. Poiroux,S. Cristoloveanu,R. Gwoziecki,(unknown),(unknown),H. Brut	55
13	Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs 2002 ·Solid-State Electronics ·J. Pretet,Dimitris E. Ioannou,(unknown),S. Cristoloveanu,W. Maszara,C. Raynaud	14
14	Reduced floating body effects in narrow channel SOI MOSFETs 2002 ·IEEE Electron Device Letters ·J. Pretet,(unknown),Dimitris E. Ioannou,S. Cristoloveanu,W. Maszara,C. Raynaud	20
15	Narrow-channel effects in LOCOS-isolated SOI MOSFETs with variable thickness 2002 ·J. Pretet,T. Ernst,S. Cristoloveanu,C. Raynaud,Dimitris E. Ioannou	7
16	Explaining the reduced floating body effects in narrow channel SOI MOSFETs 2002 ·J. Pretet,(unknown),Dimitris E. Ioannou,S. Cristoloveanu,W. Maszara,C. Raynaud	3
17	From SOI materials to innovative devices 2001 ·Solid-State Electronics ·F. Allibert,T. Ernst,J. Pretet,(unknown),(unknown),A. Zaslavsky,S. Cristoloveanu	16
18	Double-Gate MOSFETs: Is Gate Alignment Mandatory? 2001 ·F. Allibert,A. Zaslavsky,J. Pretet,S. Cristoloveanu	23
19	Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS 2001 ·Microelectronic Engineering ·J. Pretet,(unknown),Dimitris E. Ioannou,S. Cristoloveanu,W. Maszara,C. Raynaud	2
20	Electrical evaluation of innovating processes for improving SOS materials 2001 ·Microelectronic Engineering ·J. Pretet,S. Cristoloveanu,(unknown),Masahiro Matsui,(unknown),(unknown)	3

About J. Pretet

J. Pretet is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 21 papers that have together received 314 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Silicon Carbide Semiconductor Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (311 citations), Biomedical Engineering (44 citations) and Bioengineering (2 citations). J. Pretet has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include S. Cristoloveanu, S. Monfray, T. Skotnicki, C. Raynaud, F. Allibert, T. Poiroux, A. Vandooren, L. Mathew, J. Jomaah and Bich-Yen Nguyen. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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