Ignacio Martin‐Bragado

1.4k total citations
80 papers, 997 citations indexed

About

Ignacio Martin‐Bragado is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ignacio Martin‐Bragado has authored 80 papers receiving a total of 997 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in Ignacio Martin‐Bragado's work include Silicon and Solar Cell Technologies (50 papers), Semiconductor materials and interfaces (30 papers) and Semiconductor materials and devices (28 papers). Ignacio Martin‐Bragado is often cited by papers focused on Silicon and Solar Cell Technologies (50 papers), Semiconductor materials and interfaces (30 papers) and Semiconductor materials and devices (28 papers). Ignacio Martin‐Bragado collaborates with scholars based in Spain, United States and Switzerland. Ignacio Martin‐Bragado's co-authors include M. Jaraı́z, A. Rivera, G. Valles, P. Castrillo, J. Barbolla, R. Pinacho, Victor Moroz, M.J. Caturla, J.E. Rubio and J.M. Perlado and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Ignacio Martin‐Bragado

78 papers receiving 977 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ignacio Martin‐Bragado Spain 16 584 455 204 182 122 80 997
C.J. Ortiz Spain 17 728 1.2× 182 0.4× 98 0.5× 165 0.9× 128 1.0× 53 901
J. Dalla Torre France 9 712 1.2× 149 0.3× 85 0.4× 198 1.1× 112 0.9× 17 887
Marek Sosnowski United States 16 410 0.7× 315 0.7× 91 0.4× 244 1.3× 105 0.9× 40 729
Qiangmin Wei China 15 435 0.7× 246 0.5× 78 0.4× 290 1.6× 99 0.8× 34 664
Marie‐Laure David France 17 358 0.6× 571 1.3× 134 0.7× 154 0.8× 40 0.3× 61 830
G. Lucas Switzerland 14 427 0.7× 197 0.4× 67 0.3× 56 0.3× 81 0.7× 20 644
François Jomard France 13 460 0.8× 261 0.6× 92 0.5× 60 0.3× 48 0.4× 22 559
John J. Adams United States 16 323 0.6× 395 0.9× 196 1.0× 328 1.8× 119 1.0× 41 923
A. Gentils France 15 730 1.3× 134 0.3× 90 0.4× 170 0.9× 116 1.0× 64 894
Valery Borovikov United States 15 443 0.8× 105 0.2× 82 0.4× 70 0.4× 257 2.1× 33 609

Countries citing papers authored by Ignacio Martin‐Bragado

Since Specialization
Citations

This map shows the geographic impact of Ignacio Martin‐Bragado's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ignacio Martin‐Bragado with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ignacio Martin‐Bragado more than expected).

Fields of papers citing papers by Ignacio Martin‐Bragado

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ignacio Martin‐Bragado. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ignacio Martin‐Bragado. The network helps show where Ignacio Martin‐Bragado may publish in the future.

Co-authorship network of co-authors of Ignacio Martin‐Bragado

This figure shows the co-authorship network connecting the top 25 collaborators of Ignacio Martin‐Bragado. A scholar is included among the top collaborators of Ignacio Martin‐Bragado based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ignacio Martin‐Bragado. Ignacio Martin‐Bragado is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martin‐Bragado, Ignacio, et al.. (2023). He bubble growth in nickel simulated by object kinetic Monte Carlo. Journal of Nuclear Materials. 576. 154231–154231. 3 indexed citations
2.
Li, Jianyang, Chonghong Zhang, Ignacio Martin‐Bragado, Yitao Yang, & Tieshan Wang. (2022). Insights from an OKMC simulation of dose rate effects on the irradiated microstructure of RPV model alloys. Nuclear Engineering and Technology. 55(3). 958–967. 5 indexed citations
3.
Li, Jianyang, Chonghong Zhang, Yitao Yang, Tieshan Wang, & Ignacio Martin‐Bragado. (2022). Irradiation dose-rate effect in Fe-C system: An Object Kinetic Monte Carlo simulation. Journal of Nuclear Materials. 561. 153529–153529. 7 indexed citations
4.
Li, Jianyang, Chonghong Zhang, Yitao Yang, Tieshan Wang, & Ignacio Martin‐Bragado. (2021). An Object Kinetic Monte Carlo Simulation for Defect Evolution of Neutron‐Irradiated Reactor Pressure Vessel Steels: Carbon Sensitive Study. physica status solidi (b). 258(11). 3 indexed citations
5.
Valles, G., Ignacio Martin‐Bragado, K. Nordlund, et al.. (2017). Temperature dependence of underdense nanostructure formation in tungsten under helium irradiation. Journal of Nuclear Materials. 490. 108–114. 45 indexed citations
6.
Sk, Mahasin Alam, et al.. (2016). Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study. Acta Materialia. 125. 455–464. 3 indexed citations
7.
Ruiz‐Salvador, A. Rabdel, Sofı́a Calero, Elena García‐Pérez, et al.. (2015). Thermostructural behaviour of Ni–Cr materials: modelling of bulk and nanoparticle systems. Physical Chemistry Chemical Physics. 17(24). 15912–15920. 13 indexed citations
8.
Terentyev, D. & Ignacio Martin‐Bragado. (2014). Evolution of dislocation loops in iron under irradiation: The impact of carbon. Scripta Materialia. 97. 5–8. 26 indexed citations
9.
Romero, Ignacio, et al.. (2014). Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon. Acta Materialia. 82. 115–122. 8 indexed citations
10.
Pina, Carlos M., et al.. (2013). Lattice Kinetic Modeling of the Anisotropic Growth of Two-Dimensional Islands on Barite (001) Surface. Crystal Growth & Design. 13(7). 2840–2845. 12 indexed citations
11.
Sklénard, B., P. Batude, Quentin Rafhay, et al.. (2013). Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs. Solid-State Electronics. 88. 9–14. 1 indexed citations
12.
Martin‐Bragado, Ignacio, et al.. (2013). Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo. Journal of Computational Electronics. 13(1). 59–69. 3 indexed citations
13.
Sklénard, B., P. Batude, P. Rivallin, et al.. (2013). Atomistic investigation of the impact of stress during solid phase epitaxial regrowth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(1). 97–100. 2 indexed citations
14.
Martin‐Bragado, Ignacio, et al.. (2010). Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo. Solid-State Electronics. 55(1). 25–28. 7 indexed citations
15.
Martin‐Bragado, Ignacio, et al.. (2008). From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon. Solid-State Electronics. 52(9). 1430–1436. 10 indexed citations
16.
Martin‐Bragado, Ignacio, et al.. (2008). A Comprehensive Atomistic Kinetic Monte Carlo Model for Amorphization/Recrystallization and its Effects on Dopants. MRS Proceedings. 1070. 12 indexed citations
17.
Martin‐Bragado, Ignacio, Shijie Tian, Michael Johnson, et al.. (2006). Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 63–67. 13 indexed citations
18.
Jaraı́z, M., Ignacio Martin‐Bragado, J.E. Rubio, et al.. (2005). Comprehensive modeling of ion-implant amorphization in silicon. Materials Science and Engineering B. 124-125. 383–385. 3 indexed citations
19.
Rubio, J.E., M. Jaraı́z, Ignacio Martin‐Bragado, et al.. (2005). Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations. Materials Science and Engineering B. 124-125. 392–396. 3 indexed citations
20.
Pinacho, R., M. Jaraı́z, P. Castrillo, et al.. (2005). Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach. Applied Physics Letters. 86(25). 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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