L. Baud

1.1k total citations
28 papers, 499 citations indexed

About

L. Baud is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L. Baud has authored 28 papers receiving a total of 499 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in L. Baud's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon Carbide Semiconductor Technologies (7 papers). L. Baud is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon Carbide Semiconductor Technologies (7 papers). L. Baud collaborates with scholars based in France, United States and Switzerland. L. Baud's co-authors include C. Jaussaud, R. Madar, Sofia Kalogeropoulou, N. Eustathopoulos, Jen‐Sue Chen, M‐A. Nicolet, C. Bérnard, E. Kolawa, M.‐A. Nicolet and R. Ruiz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

L. Baud

28 papers receiving 484 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Baud France 14 370 145 115 88 75 28 499
Chaochao Ye China 12 160 0.4× 125 0.9× 133 1.2× 151 1.7× 102 1.4× 33 373
D. J. Godfrey United Kingdom 11 222 0.6× 85 0.6× 53 0.5× 50 0.6× 88 1.2× 47 347
Ilya Mingareev United States 13 339 0.9× 287 2.0× 104 0.9× 73 0.8× 109 1.5× 36 667
N. Rajan United States 7 452 1.2× 115 0.8× 91 0.8× 88 1.0× 205 2.7× 11 637
Han‐Young Lee South Korea 11 203 0.5× 70 0.5× 76 0.7× 33 0.4× 184 2.5× 52 349
Reza Ghandi Sweden 18 950 2.6× 163 1.1× 71 0.6× 27 0.3× 106 1.4× 75 1.0k
Mietek Bakowski Sweden 18 1.2k 3.3× 201 1.4× 69 0.6× 50 0.6× 131 1.7× 117 1.3k
Vivek Chidambaram Singapore 13 569 1.5× 64 0.4× 361 3.1× 23 0.3× 57 0.8× 36 661
Noriyuki Iwamuro Japan 19 1.2k 3.2× 123 0.8× 99 0.9× 43 0.5× 72 1.0× 85 1.2k

Countries citing papers authored by L. Baud

Since Specialization
Citations

This map shows the geographic impact of L. Baud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Baud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Baud more than expected).

Fields of papers citing papers by L. Baud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Baud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Baud. The network helps show where L. Baud may publish in the future.

Co-authorship network of co-authors of L. Baud

This figure shows the co-authorship network connecting the top 25 collaborators of L. Baud. A scholar is included among the top collaborators of L. Baud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Baud. L. Baud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jouve, A., Arnaud Garnier, Maxime Argoud, et al.. (2015). Silicon based dry-films evaluation for 2.5D and 3D Wafer-Level system integration improvement. TS1.4.1–TS1.4.8. 1 indexed citations
2.
Batude, P., M. Vinet, Chuan Xu, et al.. (2011). Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length. Symposium on VLSI Technology. 158–159. 13 indexed citations
3.
Batude, P., M. Vinet, A. Pouydebasque, et al.. (2011). 3D monolithic integration. 2233–2236. 18 indexed citations
4.
Sanchez, L., Alexandra Abbadie, L. Baud, et al.. (2010). Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates. Semiconductor Science and Technology. 25(7). 75010–75010. 13 indexed citations
5.
Vinet, M., P. Batude, C. Tabone, et al.. (2010). 3D monolithic integration: Technological challenges and electrical results. Microelectronic Engineering. 88(4). 331–335. 52 indexed citations
6.
Destefanis, V., Jean‐Michel Hartmann, L. Baud, V. Delaye, & T. Billon. (2010). Selective epitaxial growth of Ge(110) in trenches using the aspect ratio trapping technique. Journal of Crystal Growth. 312(7). 918–925. 4 indexed citations
7.
Vinet, M., T. Poiroux, Christophe Licitra, et al.. (2009). Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain. IEEE Electron Device Letters. 30(7). 748–750. 10 indexed citations
8.
Destefanis, V., D. Rouchon, Jean‐Michel Hartmann, et al.. (2009). Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates. Journal of Applied Physics. 106(4). 15 indexed citations
9.
10.
Poiroux, T., M. Vinet, F. Nemouchi, et al.. (2009). Highly performant FDSOI pMOSFETs with metallic source/drain. 87. 88–89. 3 indexed citations
11.
12.
Hartmann, Jean-Michel, et al.. (2006). Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%). ECS Transactions. 3(7). 219–229. 13 indexed citations
13.
Garcia, P., Juliette Blanc, V. Knopik, et al.. (2004). Fully-integrated WCDMA direct conversion SiGe BiCMOS receiver. 116–119. 3 indexed citations
14.
Cathelin, Andreia, et al.. (2002). A multiple–shape channel selection filter for multimode zero–IF receiver using capacitor over active device implementation. 651–654. 12 indexed citations
15.
Nicolet, M‐A., et al.. (1998). Nickel film on (001) SiC: Thermally induced reactions. Materials Science and Engineering B. 56(1). 11–23. 51 indexed citations
16.
Chen, Jen‐Sue, et al.. (1995). Contact resistivity of Re, Pt and Ta films on n-type β-SiC: Preliminary results. Materials Science and Engineering B. 29(1-3). 185–189. 23 indexed citations
17.
Kalogeropoulou, Sofia, L. Baud, & N. Eustathopoulos. (1995). Relationship between wettability and reactivity in Fe/SiC system. Acta Metallurgica et Materialia. 43(3). 907–912. 83 indexed citations
18.
Chen, Jen‐Sue, E. Kolawa, M.−A. Nicolet, et al.. (1994). Solid-state reaction of Pt thin film with single-crystal (001) β–SiC. Journal of materials research/Pratt's guide to venture capital sources. 9(3). 648–657. 19 indexed citations
19.
Chen, Jen‐Sue, E. Kolawa, M.‐A. Nicolet, et al.. (1994). Reaction of Ta thin film with single crystalline (001) β-SiC. Journal of Applied Physics. 76(4). 2169–2175. 24 indexed citations
20.
Billon, T., et al.. (1994). High temperature silicon carbide MOSFETs with verylow drain leakage current. Electronics Letters. 30(2). 170–171. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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