C. Arvet

867 total citations
28 papers, 230 citations indexed

About

C. Arvet is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Arvet has authored 28 papers receiving a total of 230 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 8 papers in Biomedical Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Arvet's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Copper Interconnects and Reliability (6 papers). C. Arvet is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Copper Interconnects and Reliability (6 papers). C. Arvet collaborates with scholars based in France, Switzerland and United States. C. Arvet's co-authors include N. Possémé, S. Borel, C. Vizioz, Jean‐Michel Hartmann, T. Skotnicki, S. Monfray, D. Louis, C. Tabone, Y. Campidelli and D.R. Holmes and has published in prestigious journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

C. Arvet

26 papers receiving 214 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Arvet France 10 223 61 44 24 23 28 230
S. Siddiqui United States 7 137 0.6× 38 0.6× 31 0.7× 32 1.3× 22 1.0× 18 151
Mitsuhiro Omura Japan 8 169 0.8× 51 0.8× 90 2.0× 20 0.8× 13 0.6× 17 198
R. Palla France 8 234 1.0× 58 1.0× 22 0.5× 9 0.4× 39 1.7× 15 240
R. Schreutelkamp Belgium 10 257 1.2× 51 0.8× 41 0.9× 7 0.3× 39 1.7× 31 276
F.N. Cubaynes Belgium 9 369 1.7× 60 1.0× 48 1.1× 7 0.3× 34 1.5× 26 388
F. Leverd France 11 386 1.7× 67 1.1× 41 0.9× 9 0.4× 44 1.9× 36 390
N. Loubet United States 8 230 1.0× 65 1.1× 40 0.9× 10 0.4× 28 1.2× 15 249
B. Sell Germany 8 183 0.8× 28 0.5× 36 0.8× 56 2.3× 26 1.1× 17 233
A.H. Montree Netherlands 7 235 1.1× 37 0.6× 34 0.8× 29 1.2× 24 1.0× 27 270
P. Charvát United States 4 390 1.7× 93 1.5× 47 1.1× 9 0.4× 56 2.4× 5 412

Countries citing papers authored by C. Arvet

Since Specialization
Citations

This map shows the geographic impact of C. Arvet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Arvet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Arvet more than expected).

Fields of papers citing papers by C. Arvet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Arvet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Arvet. The network helps show where C. Arvet may publish in the future.

Co-authorship network of co-authors of C. Arvet

This figure shows the co-authorship network connecting the top 25 collaborators of C. Arvet. A scholar is included among the top collaborators of C. Arvet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Arvet. C. Arvet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Possémé, N., et al.. (2020). Silicon nitride spacer etching selectively to silicon using CH3F/O2/He/SiCl4 plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(3). 9 indexed citations
2.
Possémé, N., et al.. (2016). Thin layer etching of silicon nitride: A comprehensive study of selective removal using NH3/NF3 remote plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(6). 36 indexed citations
3.
Barraud, Sylvain, M. Cassé, P. Nguyen, et al.. (2015). Opportunities and challenges of nanowire-based CMOS technologies. 80. 1–3. 11 indexed citations
4.
Barnola, S., Patricia Pimenta‐Barros, C. Arvet, et al.. (2014). Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9054. 90540E–90540E. 9 indexed citations
5.
Royer, C. Le, Benjamin Vincent, K. Romanjek, et al.. (2011). High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs. Solid-State Electronics. 59(1). 2–7. 11 indexed citations
6.
Tachi, K., Nathalie Vulliet, Sylvain Barraud, et al.. (2010). 3D source/drain doping optimization in Multi-Channel MOSFET. 368–371. 4 indexed citations
7.
Denorme, S., N. Loubet, Y. Campidelli, et al.. (2010). Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications. 2 indexed citations
8.
Vinet, M., T. Poiroux, Christophe Licitra, et al.. (2009). Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain. IEEE Electron Device Letters. 30(7). 748–750. 10 indexed citations
9.
10.
Monfray, S., C. Tabone, O. Kermarrec, et al.. (2008). Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates. 1–4. 25 indexed citations
11.
12.
Borel, S., et al.. (2006). Isotropic Etching of Si1-xGex Buried Layers Selectively to Si for the Realization of Advanced Devices. ECS Transactions. 3(7). 627–642. 13 indexed citations
13.
Borel, S., C. Arvet, D. Chanemougame, et al.. (2005). Impact of Tunnel Etching Process on Electrical Performances of SON Devices. Japanese Journal of Applied Physics. 44(7S). 5795–5795. 8 indexed citations
14.
Borel, S., et al.. (2004). Control of Selectivity between SiGe and Si in Isotropic Etching Processes. Japanese Journal of Applied Physics. 43(6S). 3964–3964. 15 indexed citations
15.
Borel, S., et al.. (2004). Highly selective isotropic etching processes. 6. 334–335. 1 indexed citations
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Arvet, C., et al.. (2001). Post SiN Etching Cleaning During Copper and Low K Integration. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 76-77. 101–104. 2 indexed citations
19.
Louis, D., et al.. (2001). Cleaning status on low-k dielectric in advanced VLSI interconnect:. Microelectronic Engineering. 57-58. 621–627. 10 indexed citations
20.
Louis, D., et al.. (2000). Resist removal process in dual damascene structure integrating Cu and SiLK® for 0.18 μm technology. Microelectronic Engineering. 53(1-4). 381–384. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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