Quentin Rafhay

1.1k total citations
61 papers, 700 citations indexed

About

Quentin Rafhay is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Quentin Rafhay has authored 61 papers receiving a total of 700 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in Quentin Rafhay's work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). Quentin Rafhay is often cited by papers focused on Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). Quentin Rafhay collaborates with scholars based in France, United States and Switzerland. Quentin Rafhay's co-authors include G. Ghibaudo, Elisa Vianello, L. Perniola, B. DeSalvo, Daniele Garbin, Olivier Bichler, Christian Gamrat, R. Clerc, G. Pananakakis and Anne Kaminski‐Cachopo and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and The Journal of Physical Chemistry C.

In The Last Decade

Quentin Rafhay

56 papers receiving 687 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Quentin Rafhay France 15 657 119 117 74 55 61 700
Sebastián Pazos Argentina 12 481 0.7× 169 1.4× 101 0.9× 65 0.9× 31 0.6× 63 576
Fernando Aguirre Argentina 12 493 0.8× 141 1.2× 143 1.2× 46 0.6× 44 0.8× 56 571
Xichen Chuai China 12 467 0.7× 166 1.4× 137 1.2× 56 0.8× 49 0.9× 30 528
Laurent Bellaiche United States 2 424 0.6× 147 1.2× 136 1.2× 62 0.8× 48 0.9× 4 478
Xinqiang Pan China 14 326 0.5× 154 1.3× 75 0.6× 98 1.3× 28 0.5× 48 423
Hangyu Xu China 9 426 0.6× 235 2.0× 80 0.7× 83 1.1× 24 0.4× 25 542
Doyoon Lee South Korea 6 342 0.5× 225 1.9× 121 1.0× 61 0.8× 25 0.5× 14 482
Seong Kwang Kim South Korea 14 579 0.9× 118 1.0× 77 0.7× 96 1.3× 29 0.5× 63 634
Yumin Kim South Korea 13 676 1.0× 270 2.3× 249 2.1× 65 0.9× 71 1.3× 31 778
Darsith Jayachandran United States 8 540 0.8× 367 3.1× 101 0.9× 140 1.9× 30 0.5× 8 730

Countries citing papers authored by Quentin Rafhay

Since Specialization
Citations

This map shows the geographic impact of Quentin Rafhay's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Quentin Rafhay with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Quentin Rafhay more than expected).

Fields of papers citing papers by Quentin Rafhay

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Quentin Rafhay. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Quentin Rafhay. The network helps show where Quentin Rafhay may publish in the future.

Co-authorship network of co-authors of Quentin Rafhay

This figure shows the co-authorship network connecting the top 25 collaborators of Quentin Rafhay. A scholar is included among the top collaborators of Quentin Rafhay based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Quentin Rafhay. Quentin Rafhay is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deleruyelle, Damien, Quentin Rafhay, N. Castellani, et al.. (2023). Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. HAL (Le Centre pour la Communication Scientifique Directe). 1–6. 9 indexed citations
2.
Rafhay, Quentin, et al.. (2023). Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis. Solar Energy Materials and Solar Cells. 256. 112344–112344.
3.
Desrues, Thibaut, et al.. (2023). Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells. Energies. 16(11). 4346–4346. 3 indexed citations
4.
Haendler, S., et al.. (2023). Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs. Applied Physics Letters. 122(23). 2 indexed citations
5.
Rafhay, Quentin, et al.. (2022). Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation. IEEE Transactions on Device and Materials Reliability. 22(3). 410–416. 6 indexed citations
6.
Bernier, Nicolas, Christophe Jany, Patrice Gergaud, et al.. (2022). Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices. Materials Science in Semiconductor Processing. 154. 107199–107199. 2 indexed citations
7.
Gergaud, Patrice, et al.. (2021). Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology. Materials Science in Semiconductor Processing. 128. 105731–105731. 2 indexed citations
8.
Jany, Christophe, Patrice Gergaud, F. Nemouchi, et al.. (2020). Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform. IEEE Transactions on Electron Devices. 67(6). 2495–2502. 4 indexed citations
9.
Gergaud, Patrice, D. Mariolle, Christophe Jany, et al.. (2020). Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(1). 5 indexed citations
10.
Cooper, David, Eduardo Salas‐Colera, Juan Rubio‐Zuazo, et al.. (2020). Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor. Advanced Functional Materials. 30(17). 16 indexed citations
11.
Sassine, Gilbert, et al.. (2019). Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation. IEEE Transactions on Electron Devices. 66(8). 3318–3325. 17 indexed citations
12.
Pla, Dolors, Odette Chaix‐Pluchery, F. Wilhelm, et al.. (2019). Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD. Beilstein Journal of Nanotechnology. 10. 389–398. 17 indexed citations
13.
Rafhay, Quentin, et al.. (2018). Opto-electrical simulation of III-V nanowire based tandem solar cells on Si. AIP conference proceedings. 1999. 120001–120001. 1 indexed citations
14.
Rafhay, Quentin, X. Garros, M. Cassé, et al.. (2017). Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. HAL (Le Centre pour la Communication Scientifique Directe). 144–147. 1 indexed citations
15.
Appert, Estelle, Odette Chaix‐Pluchery, Laëtitia Rapenne, et al.. (2017). Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate. The Journal of Physical Chemistry C. 121(6). 3573–3583. 29 indexed citations
16.
Rafhay, Quentin, et al.. (2016). New Y -function based MOSFET parameter extraction method from weak to strong inversion range. Solid-State Electronics. 123. 84–88. 21 indexed citations
17.
Hiblot, Gaspard, Quentin Rafhay, F. Bœuf, & G. Ghibaudo. (2015). Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials. Solid-State Electronics. 111. 188–195. 2 indexed citations
18.
Hiblot, Gaspard, Gabriel Mugny, Quentin Rafhay, F. Bœuf, & G. Ghibaudo. (2015). Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity. IEEE Transactions on Nanotechnology. 14(4). 768–775. 2 indexed citations
19.
Hiblot, Gaspard, Quentin Rafhay, F. Bœuf, & G. Ghibaudo. (2014). Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire. Solid-State Electronics. 100. 71–78. 1 indexed citations
20.
Sklénard, B., P. Batude, Quentin Rafhay, et al.. (2013). Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs. Solid-State Electronics. 88. 9–14. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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