M.-A. Jaud

1.2k total citations
17 papers, 337 citations indexed

About

M.-A. Jaud is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M.-A. Jaud has authored 17 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M.-A. Jaud's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and GaN-based semiconductor devices and materials (5 papers). M.-A. Jaud is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and GaN-based semiconductor devices and materials (5 papers). M.-A. Jaud collaborates with scholars based in France, Italy and United States. M.-A. Jaud's co-authors include S. Martinie, J. Lacord, M. Vinet, Sylvain Barraud, O. Rozeau, J. C. Barbé, Carlos Navarro, Jean‐Michel Hartmann, F. Andrieu and C. Comboroure and has published in prestigious journals such as IEEE Transactions on Electron Devices, Solid-State Electronics and HAL (Le Centre pour la Communication Scientifique Directe).

In The Last Decade

M.-A. Jaud

17 papers receiving 326 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M.-A. Jaud France	11	325	72	28	21	20	17	337
Marie-Anne Jaud France	6	291 0.9×	41 0.6×	29 1.0×	13 0.6×	29 1.4×	16	299
Guan Huei See Singapore	11	341 1.0×	42 0.6×	11 0.4×	19 0.9×	32 1.6×	44	355
S. Makovejev Belgium	14	463 1.4×	42 0.6×	23 0.8×	24 1.1×	26 1.3×	28	472
J. Malinowski United States	9	306 0.9×	42 0.6×	22 0.8×	15 0.7×	26 1.3×	30	318
Meng-Tian Bao China	11	320 1.0×	26 0.4×	38 1.4×	18 0.9×	19 0.9×	33	343
Chunlei Wu China	14	601 1.8×	155 2.2×	58 2.1×	44 2.1×	26 1.3×	39	641
Ching-Sung Ho China	6	268 0.8×	43 0.6×	11 0.4×	33 1.6×	16 0.8×	7	284
D. Blachier France	7	145 0.4×	33 0.5×	19 0.7×	23 1.1×	18 0.9×	23	156
S. Cristoloveanu France	9	295 0.9×	22 0.3×	56 2.0×	27 1.3×	14 0.7×	14	312
T. Iizuka Japan	9	411 1.3×	21 0.3×	21 0.8×	34 1.6×	32 1.6×	61	424

Countries citing papers authored by M.-A. Jaud

Since Specialization

Citations

This map shows the geographic impact of M.-A. Jaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-A. Jaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-A. Jaud more than expected).

Fields of papers citing papers by M.-A. Jaud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-A. Jaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-A. Jaud. The network helps show where M.-A. Jaud may publish in the future.

Co-authorship network of co-authors of M.-A. Jaud

This figure shows the co-authorship network connecting the top 25 collaborators of M.-A. Jaud. A scholar is included among the top collaborators of M.-A. Jaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.-A. Jaud. M.-A. Jaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Jaud, M.-A., et al.. (2022). A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures. Solid-State Electronics. 194. 108322–108322. 3 indexed citations

Jaud, M.-A., et al.. (2022). Effect of doping on Al2O3/GaN MOS capacitance. Solid-State Electronics. 194. 108356–108356. 2 indexed citations

Jaud, M.-A., J. Coignus, J. Cluzel, et al.. (2021). Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. SPIRE - Sciences Po Institutional REpository. 1–8. 6 indexed citations

Jaud, M.-A., Louis Gerrer, X. Garros, et al.. (2020). Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT. SPIRE - Sciences Po Institutional REpository. 15 indexed citations

Jaud, M.-A., Laura Vauche, C. Le Royer, et al.. (2020). A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs. SPIRE - Sciences Po Institutional REpository. 23.5.1–23.5.4. 7 indexed citations

Barraud, Sylvain, V. Lapras, B. Prévitali, et al.. (2017). Performance and design considerations for gate-all-around stacked-NanoWires FETs. HAL (Le Centre pour la Communication Scientifique Directe). 29.2.1–29.2.4. 113 indexed citations

Navarro, Carlos, Sylvain Barraud, S. Martinie, et al.. (2016). Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI devices. 5–8. 17 indexed citations

Navarro, Carlos, Sylvain Barraud, S. Martinie, et al.. (2016). Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations. Solid-State Electronics. 128. 155–162. 34 indexed citations

Barraud, Sylvain, M. Cassé, P. Nguyen, et al.. (2015). Opportunities and challenges of nanowire-based CMOS technologies. 80. 1–3. 11 indexed citations

10.

Lacord, J., S. Martinie, O. Rozeau, et al.. (2015). Parasitic Capacitance Analytical Model for Sub-7-nm Multigate Devices. IEEE Transactions on Electron Devices. 63(2). 781–786. 12 indexed citations

11.

Barraud, Sylvain, M.-A. Jaud, S. Martinie, et al.. (2015). Stacked-Nanowire and FinFET Transistors: Guidelines for the 7nm Node. 7 indexed citations

12.

Grenouillet, L., B. De Salvo, Laurent Brunet, et al.. (2014). Smart co-integration of light sensitive layers with FDSOI transistors for More than Moore applications. 1–2. 7 indexed citations

13.

Poiroux, T., O. Rozeau, S. Martinie, et al.. (2013). UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs. 12.4.1–12.4.4. 18 indexed citations

14.

Weber, O., F. Andrieu, F. Allain, et al.. (2011). Drain current variability and MOSFET parameters correlations in planar FDSOI technology. 25.5.1–25.5.4. 21 indexed citations

15.

Noël, J.-P., Olivier Thomas, M.-A. Jaud, et al.. (2010). UT2B-FDSOI device architecture dedicated to low power design techniques. 91. 210–213. 15 indexed citations

16.

Thomas, Olivier, Jean-Philippe Noël, C. Fenouillet-Béranger, et al.. (2010). 32nm and beyond Multi-V<inf>T</inf> Ultra-Thin Body and BOX FDSOI: From device to circuit. 1703–1706. 17 indexed citations

17.

Romanjek, K., Louis Hutin, C. Le Royer, et al.. (2009). High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate. Solid-State Electronics. 53(7). 723–729. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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