D. Blachier

666 total citations
23 papers, 156 citations indexed

About

D. Blachier is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Blachier has authored 23 papers receiving a total of 156 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Blachier's work include Semiconductor materials and devices (17 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). D. Blachier is often cited by papers focused on Semiconductor materials and devices (17 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). D. Blachier collaborates with scholars based in France, United States and Belgium. D. Blachier's co-authors include G. Reimbold, C. Leroux, C. Le Royer, F. Boulanger, Matthew Charles, M. Cassé, C. Tabone, Edwige Bano, G. Ghibaudo and B. Guillaumot and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and IEEE Electron Device Letters.

In The Last Decade

D. Blachier

23 papers receiving 148 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Blachier France	7	145	33	23	19	18	23	156
Ching-Sung Ho China	6	268 1.8×	43 1.3×	33 1.4×	11 0.6×	16 0.9×	7	284
Zhenyu He United States	5	188 1.3×	35 1.1×	20 0.9×	8 0.4×	25 1.4×	10	194
Marie-Anne Jaud France	6	291 2.0×	41 1.2×	13 0.6×	29 1.5×	29 1.6×	16	299
Guan Huei See Singapore	11	341 2.4×	42 1.3×	19 0.8×	11 0.6×	32 1.8×	44	355
Ibrahim Ban United States	7	145 1.0×	11 0.3×	18 0.8×	11 0.6×	28 1.6×	15	152
S. Cristoloveanu France	9	295 2.0×	22 0.7×	27 1.2×	56 2.9×	14 0.8×	14	312
S. Makovejev Belgium	14	463 3.2×	42 1.3×	24 1.0×	23 1.2×	26 1.4×	28	472
Meng-Tian Bao China	11	320 2.2×	26 0.8×	18 0.8×	38 2.0×	19 1.1×	33	343
Hitoshi Sumida Japan	12	297 2.0×	19 0.6×	31 1.3×	16 0.8×	45 2.5×	46	313
M.-A. Jaud France	11	325 2.2×	72 2.2×	21 0.9×	28 1.5×	20 1.1×	17	337

Countries citing papers authored by D. Blachier

Since Specialization

Citations

This map shows the geographic impact of D. Blachier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Blachier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Blachier more than expected).

Fields of papers citing papers by D. Blachier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Blachier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Blachier. The network helps show where D. Blachier may publish in the future.

Co-authorship network of co-authors of D. Blachier

This figure shows the co-authorship network connecting the top 25 collaborators of D. Blachier. A scholar is included among the top collaborators of D. Blachier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Blachier. D. Blachier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Blachier, D., et al.. (2022). H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq. Journal of Crystal Growth. 588. 126674–126674. 2 indexed citations

Martin, M., S. David, J. Moeyaert, et al.. (2020). Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers. AIP Advances. 10(12). 6 indexed citations

Widiez, J., D. Blachier, Paul‐Henri Haumesser, et al.. (2019). Advanced Substrates for GaN-Based Power Devices. SPIRE - Sciences Po Institutional REpository. 168–174. 3 indexed citations

Baines, Yannick, et al.. (2019). Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer. Journal of Crystal Growth. 515. 48–52. 3 indexed citations

Blachier, D., G. Reimbold, F. Campabadal, et al.. (2019). Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors. IEEE Transactions on Device and Materials Reliability. 19(2). 452–460. 5 indexed citations

Leroux, C., et al.. (2017). Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect. Microelectronic Engineering. 178. 128–131. 12 indexed citations

Leroux, C., Matthew Charles, A. Torres, et al.. (2013). Sheet resistance measurement on AlGaN/GaN wafers and dispersion study. Microelectronic Engineering. 109. 334–337. 5 indexed citations

Navarro, G., A. Persico, C. Jahan, et al.. (2013). Reliability study of carbon-doped GST stack robust against Pb-free soldering reflow. MY.8.1–MY.8.5. 3 indexed citations

Cassé, M., Sylvain Barraud, C. Le Royer, et al.. (2012). Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires. 28.1.1–28.1.4. 9 indexed citations

10.

Mayer, F., C. Le Royer, D. Blachier, L. Clavelier, & S. Deleonibus. (2008). Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues. IEEE Transactions on Electron Devices. 55(6). 1373–1378. 6 indexed citations

11.

Royer, C. Le, Benjamin Vincent, L. Clavelier, et al.. (2008). High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances. IEEE Electron Device Letters. 29(6). 635–637. 17 indexed citations

12.

Cassé, M., M. Mouis, G. Reimbold, et al.. (2007). Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs. Solid-State Electronics. 51(11-12). 1458–1465. 14 indexed citations

13.

Cluzel, J., et al.. (2003). Electrical characterization of copper penetration effects in silicon dioxide. 431–432. 3 indexed citations

14.

Cretu, B., G. Ghibaudo, F. Balestra, et al.. (2002). Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures. Solid-State Electronics. 46(3). 337–342. 1 indexed citations

15.

Blachier, D., et al.. (2002). Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization. 31. 93–97. 5 indexed citations

16.

Leroux, C. & D. Blachier. (1999). Light emission microscopy for reliability studies. Microelectronic Engineering. 49(1-2). 169–180. 8 indexed citations

17.

Reimbold, G., et al.. (1998). Building in reliability with latch-up, ESD and hot carrier effects on 0.25μm CMOS technology. Microelectronics Reliability. 38(10). 1547–1552. 6 indexed citations

18.

Reimbold, G., et al.. (1997). Building in reliability with latch-up, ESD and hot carrier effects on a 0.25 um CMOS technology. European Solid-State Device Research Conference. 464–467. 3 indexed citations

19.

Leroux, C., et al.. (1997). Light emission microscopy for thin oxide reliability analysis. Microelectronic Engineering. 36(1-4). 297–300. 24 indexed citations

20.

Reimbold, G., et al.. (1997). Charge pumping characterization of transistors with common gate, source and bulk pads. Microelectronic Engineering. 36(1-4). 47–50. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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