B. Guillaumot

1.7k total citations
65 papers, 1.1k citations indexed

About

B. Guillaumot is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, B. Guillaumot has authored 65 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 3 papers in Computer Networks and Communications. Recurrent topics in B. Guillaumot's work include Semiconductor materials and devices (65 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). B. Guillaumot is often cited by papers focused on Semiconductor materials and devices (65 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). B. Guillaumot collaborates with scholars based in France, Switzerland and Japan. B. Guillaumot's co-authors include G. Ghibaudo, G. Reimbold, B. De Salvo, G. Pananakakis, F. Martín, S. Deleonibus, T. Ernst, M. Cassé, Jérôme Mitard and T. Baron and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

B. Guillaumot

62 papers receiving 1.1k citations

Peers

Countries citing papers authored by B. Guillaumot

Since Specialization

Citations

This map shows the geographic impact of B. Guillaumot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Guillaumot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Guillaumot more than expected).

Fields of papers citing papers by B. Guillaumot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Guillaumot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Guillaumot. The network helps show where B. Guillaumot may publish in the future.

Co-authorship network of co-authors of B. Guillaumot

This figure shows the co-authorship network connecting the top 25 collaborators of B. Guillaumot. A scholar is included among the top collaborators of B. Guillaumot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Guillaumot. B. Guillaumot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	3D source/drain doping optimization in Multi-Channel MOSFET 2010 ·K. Tachi, Nathalie Vulliet, Sylvain Barraud, B. Guillaumot, V. Maffini-Alvaro, C. Vizioz, C. Arvet, Y. Campidelli, P. Gautier, Jean‐Michel Hartmann, T. Skotnicki, S. Cristoloveanu, Hiroshi Iwai, O. Faynot, T. Ernst	4
2	First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements 2009 ·IEEE Electron Device Letters ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, (unknown), O. Rozeau, F. Danneville, P. Coronel, T. Skotnicki, S. Deleonibus, O. Faynot	15
3	Multi-Channel Field-Effect Transistor (MCFET)—Part I: Electrical Performance and Current Gain Analysis 2009 ·IEEE Transactions on Electron Devices ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, (unknown), T. Skotnicki, S. Deleonibus, Olivier Faynot	18
4	Analog/RF Performance of Multichannel SOI MOSFET 2009 ·IEEE Transactions on Electron Devices ·(unknown), Émilie Bernard, O. Rozeau, T. Ernst, B. Guillaumot, Nathalie Vulliet, (unknown), (unknown), Sylvie Lépilliet, G. Dambrine, F. Danneville	41
5	Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI 2008 ·Solid-State Electronics ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, X. Garros, V. Maffini-Alvaro, P. Coronel, T. Skotnicki, S. Deleonibus	11
6	3D stacked channels: how series resistances can limit 3D devices performance 2007 ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, V. Maffini-Alvaro, F. Andrieu, (unknown), P. Rivallin, C. Vizioz, Y. Campidelli, (unknown), Jean‐Michel Hartmann, S. Borel, V. Delaye, A. Pouydebasque, (unknown), P. Coronel, T. Skotnicki, S. Deleonibus	7
7	Defects in the interfacial layer of SiO<inf>2</inf>-HfO<inf>2</inf> gate stacks: Depth distribution and indentification 2007 ·(unknown), D. Bauza, B. Guillaumot	8
8	Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs 2007 ·Solid-State Electronics ·(unknown), M. Cassé, M. Mouis, G. Reimbold, D. Blachier, (unknown), B. Guillaumot, F. Boulanger	14
9	Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric 2006 ·J. Widiez, M. Vinet, B. Guillaumot, T. Poiroux, D. Lafond, P. Holliger, O. Weber, V. Barral, B. Prévitali, F. Martín, M. Mouis, S. Deleonibus	2
10	A novel locally engineered [111[ v-channel pMOSFET architecture with improved drivability characteristics for low-standby power (LSTP) CMOS applications 2005 ·O. Weber, P. Scheiblin, R. Ritzenthaler, T. Ernst, F. Andrieu, F. Ducroquet, J.-F. Damlencourt, Y. Le Tiec, Anne‐Marie Papon, H. Dansas, L. Brévard, A. Toffoli, B. Guillaumot, S. Deleonibus	1
11	Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3 2005 ·Microelectronic Engineering ·F. Fillot, (unknown), S. Minoret, I. Maťko, S. Maı̂trejean, B. Guillaumot, B. Chenevier, T. Billon	100
12	Study of electrically active defects in high mobility HfO/sub 2/ MOSFETs 2004 ·(unknown), O. Weber, Markus Müller, F. Ducroquet, (unknown), (unknown), T. Ernst, B. Guillaumot, S. Deleonibus, T. Skotnicki	2
13	A new physical model for NVM data-retention time-to-failure 2003 ·B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, P. Candelier, G. Reimbold	2
14	Electrical Characterization of Memory-Cell Structures Employing Ultra-Thin Al2O3 Film as Storage Node 2001 ·A.J.S. Fernandes, B. De Salvo, Pascal Le Masson, G. Pananakakis, G. Ghibaudo, T. Baron, N. Buffet, D. Mariolle, B. Guillaumot	1
15	Investigation of Dynamic Memory Effects in Si-dot Devices 2000 ·B. De Salvo, A.J.S. Fernandes, (unknown), B. Guillaumot, T. Baron, G. Reimbold	6
16	Investigation of charging/discharging phenomena in nano-crystal memories 2000 ·Superlattices and Microstructures ·B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, T. Baron	15
17	A new extrapolation law for data-retention time-to-failure of nonvolatile memories 1999 ·IEEE Electron Device Letters ·B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, P. Candelier, G. Reimbold	16
18	Experimental and theoretical investigation of nonvolatile memory data-retention 1999 ·IEEE Transactions on Electron Devices ·B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, (unknown), B. Guillaumot, P. Candelier	55
19	Data Retention Time-to-Failure of Non Volatile Memories 1998 ·European Solid-State Device Research Conference ·B. De Salvo, G. Ghibaudo, (unknown), B. Guillaumot, P. Candelier	4
20	Thinning Oxide-Nitride-Oxide Interpoly Dielectric (11-13nm) for 0.25 um Flash Cell Memories 1997 ·European Solid-State Device Research Conference ·P. Candelier, B. De Salvo, F. Martín, B. Guillaumot, (unknown), G. Reimbold	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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