C. Tabone

2.6k total citations
58 papers, 1.1k citations indexed

About

C. Tabone is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Tabone has authored 58 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 17 papers in Biomedical Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Tabone's work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Nanowire Synthesis and Applications (16 papers). C. Tabone is often cited by papers focused on Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Nanowire Synthesis and Applications (16 papers). C. Tabone collaborates with scholars based in France, United States and Switzerland. C. Tabone's co-authors include C. Le Royer, B. Prévitali, S. Deleonibus, M. Vinet, Jean‐Michel Hartmann, L. Clavelier, K. Romanjek, F. Andrieu, F. Mayer and J.-F. Damlencourt and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

C. Tabone

57 papers receiving 1.1k citations

Peers

Countries citing papers authored by C. Tabone

Since Specialization

Citations

This map shows the geographic impact of C. Tabone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Tabone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Tabone more than expected).

Fields of papers citing papers by C. Tabone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Tabone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Tabone. The network helps show where C. Tabone may publish in the future.

Co-authorship network of co-authors of C. Tabone

This figure shows the co-authorship network connecting the top 25 collaborators of C. Tabone. A scholar is included among the top collaborators of C. Tabone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Tabone. C. Tabone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Impact of strain on access resistance in planar and nanowire CMOS devices 2017 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), (unknown), François Triozon, M. Cassé, L. Bourdet, G. Ghibaudo, D. Rideau, Yann‐Michel Niquet, Sylvain Barraud, P. Nguyen, C. Le Royer, J. Lacord, C. Tabone, O. Rozeau, D. Dutartre, A. Claverie, E. Josse, F. Andrieu, M. Vinet	4
2	On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices 2016 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), S. Reboh, C. Le Royer, Y. Morand, Jürgen Hartmann, D. Rouchon, (unknown), C. Tabone, N. Rambal, (unknown), (unknown), F. Bœuf, M. Haond, A. Claverie, M. Vinet	2
3	Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics 2016 ·IEEE Transactions on Electron Devices ·Louis Hutin, C. Le Royer, (unknown), (unknown), (unknown), V. Delaye, Jean‐Michel Hartmann, C. Tabone, M. Vinet	5
4	Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors 2016 ·ECS Transactions ·(unknown), C. Fenouillet-Béranger, Jean‐Michel Hartmann, Philippe Rodriguez, V. Benevent, Marie-Pierre Samson, B. Prévitali, C. Tabone, M. Cassé, F. Allain, G. Romano, Laurent Brunet, P. Batude, T. Skotnicki, M. Vinet	1
5	Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs 2015 ·Solid-State Electronics ·Louis Hutin, (unknown), (unknown), S. Martinie, C. Tabone, C. Le Royer, M. Vinet	4
6	Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs 2015 ·(unknown), Louis Hutin, (unknown), (unknown), C. Le Royer, S. Martinie, C. Tabone, M. Vinet	1
7	Investigation of tunnel field-effect transistors as a capacitor-less memory cell 2014 ·Applied Physics Letters ·Arnab Biswas, (unknown), Wladek Grabinski, Antonios Bazigos, C. Le Royer, Jean‐Michel Hartmann, C. Tabone, M. Vinet, Adrian M. Ionescu	36
8	(Invited) Strain-Enhanced Performance of Si-Nanowire FETs 2013 ·ECS Transactions ·M. Cassé, Sylvain Barraud, R. Coquand, Masahiro Koyama, David Cooper, C. Vizioz, C. Comboroure, P. Perreau, V. Maffini-Alvaro, C. Tabone, L. Tosti, S. Barnola, V. Delaye, F. Aussenac, G. Ghibaudo, Hiroshi Iwai, G. Reimbold	4
9	Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET 2013 ·IEEE Transactions on Electron Devices ·(unknown), C. Le Royer, M. Cassé, (unknown), Jean‐Michel Hartmann, F. Allain, C. Tabone, (unknown), S. Cristoloveanu	19
10	Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length 2011 ·Symposium on VLSI Technology ·P. Batude, M. Vinet, Chuan Xu, B. Prévitali, C. Tabone, C. Le Royer, L. Sanchez, L. Baud, Laurent Brunet, A. Toffoli, F. Allain, D. Lafond, F. Aussenac, Ο. Thomas, T. Poiroux, O. Faynot	13
11	3D monolithic integration 2011 ·P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	18
12	GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current 2010 ·IEEE Electron Device Letters ·Louis Hutin, C. Le Royer, (unknown), Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, C. Tabone, B. Prévitali, A. Pouydebasque, M. Vinet, O. Faynot	93
13	Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs 2009 ·IEEE Transactions on Electron Devices ·A. Pouydebasque, (unknown), C. Le Royer, C. Tabone, B. Prévitali, F. Allain, E. Augendre, Jean‐Michel Hartmann, H. Grampeix, Maud Vinet	7
14	First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage 2008 ·A. Pouydebasque, C. Le Royer, C. Tabone, K. Romanjek, E. Augendre, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, (unknown), R. Truche, L. Clavelier, S. Deleonibus	8
15	Impact of SOI, Si<inf>1-x</inf>Ge<inf>x</inf>OI and GeOI substrates on CMOS compatible Tunnel FET performance 2008 ·F. Mayer, C. Le Royer, J.-F. Damlencourt, K. Romanjek, F. Andrieu, C. Tabone, B. Prévitali, S. Deleonibus	198
16	105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers 2008 ·Solid-State Electronics ·C. Le Royer, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, Jean‐Michel Hartmann, (unknown), H. Grampeix, (unknown), G. Le Carval, R. Truche, A. Pouydebasque, M. Vinet, S. Deleonibus	24
17	Germanium-On-Nothing (GeON): an innovative technology for ultrathin Ge film integration 2007 ·(unknown), S. Monfray, D. Rideau, (unknown), N. Loubet, T. Skotnicki, C. Tabone, (unknown), S. Borel, (unknown), (unknown), Benjamin Vincent, B. Prévitali, L. Clavelier, Marc Bescond, G. Ghibaudo	2
18	Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS 2006 ·F. Mayer, C. Le Royer, G. Le Carval, C. Tabone, L. Clavelier, S. Deleonibus	17
19	Characterization and simulation of STI isolation for 0.1 /spl mu/m partially-depleted SOI devices 2001 ·C. Fenouillet-Béranger, O. Faynot, C. Tabone, (unknown), (unknown), C. Jahan, (unknown), (unknown), J.L. Pelloie	1
20	Characterization and simulation of the parasitic BJT in 0.1um partially-depleted SOI devices 2001 ·C. Fenouillet-Béranger, O. Faynot, J. de Pontcharra, C. Tabone, (unknown), A. Grouillet, J.L. Pelloie, (unknown)	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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