C. Tabone

2.6k total citations
58 papers, 1.1k citations indexed

About

C. Tabone is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Tabone has authored 58 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 17 papers in Biomedical Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Tabone's work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Nanowire Synthesis and Applications (16 papers). C. Tabone is often cited by papers focused on Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers) and Nanowire Synthesis and Applications (16 papers). C. Tabone collaborates with scholars based in France, United States and Switzerland. C. Tabone's co-authors include C. Le Royer, B. Prévitali, S. Deleonibus, M. Vinet, Jean‐Michel Hartmann, L. Clavelier, K. Romanjek, F. Andrieu, F. Mayer and J.-F. Damlencourt and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

C. Tabone

57 papers receiving 1.1k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
C. Tabone 1.1k 292 87 63 21 58 1.1k
A. Pouydebasque 804 0.8× 183 0.6× 87 1.0× 65 1.0× 11 0.5× 60 840
D. Boyd 811 0.8× 129 0.4× 128 1.5× 61 1.0× 16 0.8× 18 832
Dmitry Yakimets 1.1k 1.0× 304 1.0× 86 1.0× 122 1.9× 18 0.9× 34 1.2k
A. Vandooren 1.6k 1.5× 413 1.4× 118 1.4× 65 1.0× 9 0.4× 131 1.7k
Trong Huynh-Bao 636 0.6× 182 0.6× 70 0.8× 56 0.9× 18 0.9× 23 678
K. Ishimaru 584 0.5× 99 0.3× 68 0.8× 46 0.7× 48 2.3× 63 703
C. Vizioz 965 0.9× 356 1.2× 128 1.5× 83 1.3× 6 0.3× 57 1.0k
L. Shi 487 0.5× 112 0.4× 46 0.5× 36 0.6× 11 0.5× 13 512
T. Vähä-Heikkilä 867 0.8× 294 1.0× 90 1.0× 22 0.3× 16 0.8× 77 914
C. Kuo 1.3k 1.2× 224 0.8× 117 1.3× 121 1.9× 16 0.8× 13 1.4k

Countries citing papers authored by C. Tabone

Since Specialization
Citations

This map shows the geographic impact of C. Tabone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Tabone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Tabone more than expected).

Fields of papers citing papers by C. Tabone

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Tabone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Tabone. The network helps show where C. Tabone may publish in the future.

Co-authorship network of co-authors of C. Tabone

This figure shows the co-authorship network connecting the top 25 collaborators of C. Tabone. A scholar is included among the top collaborators of C. Tabone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Tabone. C. Tabone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Triozon, François, M. Cassé, L. Bourdet, et al.. (2017). Impact of strain on access resistance in planar and nanowire CMOS devices. HAL (Le Centre pour la Communication Scientifique Directe). T224–T225. 4 indexed citations
2.
Rozeau, O., S. Martinie, T. Poiroux, et al.. (2016). NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs. HAL (Le Centre pour la Communication Scientifique Directe). 7.5.1–7.5.4. 14 indexed citations
3.
Reboh, S., C. Le Royer, Y. Morand, et al.. (2016). On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(10-12). 740–745. 2 indexed citations
4.
Hutin, Louis, C. Le Royer, V. Delaye, et al.. (2016). Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics. IEEE Transactions on Electron Devices. 63(6). 2577–2582. 5 indexed citations
5.
Fenouillet-Béranger, C., Jean‐Michel Hartmann, Philippe Rodriguez, et al.. (2016). Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors. ECS Transactions. 75(8). 51–58. 1 indexed citations
6.
Hutin, Louis, et al.. (2015). Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs. Solid-State Electronics. 115. 160–166. 4 indexed citations
7.
Biswas, Arnab, Wladek Grabinski, Antonios Bazigos, et al.. (2014). Investigation of tunnel field-effect transistors as a capacitor-less memory cell. Applied Physics Letters. 104(9). 36 indexed citations
8.
Cassé, M., Sylvain Barraud, R. Coquand, et al.. (2013). (Invited) Strain-Enhanced Performance of Si-Nanowire FETs. ECS Transactions. 53(3). 125–136. 4 indexed citations
9.
Royer, C. Le, M. Cassé, Jean‐Michel Hartmann, et al.. (2013). Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET. IEEE Transactions on Electron Devices. 60(12). 4079–4084. 19 indexed citations
10.
Batude, P., M. Vinet, Chuan Xu, et al.. (2011). Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length. Symposium on VLSI Technology. 158–159. 13 indexed citations
11.
Batude, P., M. Vinet, A. Pouydebasque, et al.. (2011). 3D monolithic integration. 2233–2236. 18 indexed citations
12.
Vinet, M., P. Batude, C. Tabone, et al.. (2010). 3D monolithic integration: Technological challenges and electrical results. Microelectronic Engineering. 88(4). 331–335. 52 indexed citations
13.
Pouydebasque, A., C. Le Royer, C. Tabone, et al.. (2009). Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs. IEEE Transactions on Electron Devices. 56(12). 3240–3244. 7 indexed citations
14.
Pouydebasque, A., C. Le Royer, C. Tabone, et al.. (2008). First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage. 16–17. 8 indexed citations
15.
Royer, C. Le, L. Clavelier, C. Tabone, et al.. (2008). 105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers. Solid-State Electronics. 52(9). 1285–1290. 24 indexed citations
16.
Monfray, S., D. Rideau, N. Loubet, et al.. (2007). Germanium-On-Nothing (GeON): an innovative technology for ultrathin Ge film integration. 74. 450–453. 2 indexed citations
17.
Mayer, F., C. Le Royer, G. Le Carval, et al.. (2006). Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS. 17 indexed citations
18.
Raynaud, C., O. Faynot, J.L. Pelloie, et al.. (2002). 0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters. Solid-State Electronics. 46(3). 379–386. 12 indexed citations
19.
Fenouillet-Béranger, C., et al.. (2001). Characterization and simulation of STI isolation for 0.1 /spl mu/m partially-depleted SOI devices. 87–88. 1 indexed citations
20.
Fenouillet-Béranger, C., O. Faynot, J. de Pontcharra, et al.. (2001). Characterization and simulation of the parasitic BJT in 0.1um partially-depleted SOI devices. 339–342.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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