D. Lafond

2.0k total citations
71 papers, 1.1k citations indexed

About

D. Lafond is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Lafond has authored 71 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 14 papers in Biomedical Engineering and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Lafond's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). D. Lafond is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). D. Lafond collaborates with scholars based in France, Czechia and Switzerland. D. Lafond's co-authors include S. Deleonibus, Jean‐Michel Hartmann, E. Martínez, M. Vinet, L. Clavelier, G. Molas, V. Jousseaume, V. Delaye, G. Audoit and B. Prévitali and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. Lafond

69 papers receiving 1.0k citations

Peers

Countries citing papers authored by D. Lafond

Since Specialization

Citations

This map shows the geographic impact of D. Lafond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Lafond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Lafond more than expected).

Fields of papers citing papers by D. Lafond

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Lafond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Lafond. The network helps show where D. Lafond may publish in the future.

Co-authorship network of co-authors of D. Lafond

This figure shows the co-authorship network connecting the top 25 collaborators of D. Lafond. A scholar is included among the top collaborators of D. Lafond based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Lafond. D. Lafond is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration 2015 ·Solid-State Electronics ·C. Fenouillet-Béranger, B. Prévitali, P. Batude, F. Nemouchi, M. Cassé, X. Garros, L. Tosti, N. Rambal, D. Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Grégoire, M. Mellier, M. Vinet	19
2	FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration 2014 ·C. Fenouillet-Béranger, B. Prévitali, P. Batude, F. Nemouchi, M. Cassé, X. Garros, L. Tosti, N. Rambal, D. Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Grégoire, M. Mellier, (unknown)	23
3	P.141L: Late‐News Poster: ALD‐based Multilayer Encapsulation of PIN OLED: On the Stability of the Organic Layer in 85°C / 85% RH Storage Conditions 2013 ·SID Symposium Digest of Technical Papers ·(unknown), Tony Maindron, Bernard Aventurier, (unknown), (unknown), (unknown), (unknown), D. Lafond	4
4	Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures 2013 ·Nanotechnology ·P. Calka, E. Martínez, V. Delaye, D. Lafond, G. Audoit, D. Mariolle, Nicolas Chevalier, H. Grampeix, C. Cagli, V. Jousseaume, C. Guedj	68
5	Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain 2013 ·ECS Transactions ·(unknown), F. Nemouchi, V. Carron, Y. Morand, (unknown), M. Vinet, Jean‐François Damlencourt, F. Allain, O. Cueto, D. Lafond	3
6	Cu nanoparticles on 2D and 3D silica substrates: controlled size and density, and critical size in catalytic silicon nanowire growth 2012 ·Journal of Materials Chemistry C ·Arthur Roussey, P. Gentile, D. Lafond, E. Martínez, V. Jousseaume, Chloé Thieuleux, Christophe Copéret	19
7	Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length 2011 ·Symposium on VLSI Technology ·P. Batude, M. Vinet, Chuan Xu, B. Prévitali, C. Tabone, C. Le Royer, L. Sanchez, L. Baud, Laurent Brunet, A. Toffoli, F. Allain, D. Lafond, F. Aussenac, Ο. Thomas, T. Poiroux, O. Faynot	13
8	3D monolithic integration 2011 ·P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	18
9	Quantitative profiling of SiGe/Si superlattices by time‐of‐flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol 2011 ·Rapid Communications in Mass Spectrometry ·M. Py, Jean‐Paul Barnes, D. Lafond, Jean‐Michel Hartmann	17
10	Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories 2011 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), M. Bocquet, G. Molas, N. Rochat, P. Blaise, H. Grampeix, Christophe Licitra, D. Lafond, (unknown), (unknown), Jean‐Paul Barnes, M. Veillerot, (unknown)	5
11	Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon–Germanium Source/Drain 2010 ·IEEE Electron Device Letters ·(unknown), F. Andrieu, O. Weber, P. Perreau, Jean‐François Damlencourt, S. Barnola, T. Salvetat, L. Tosti, L. Brévard, D. Lafond, J. Eymery, Olivier Faynot	10
12	Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain 2009 ·IEEE Electron Device Letters ·M. Vinet, T. Poiroux, Christophe Licitra, J. Widiez, (unknown), B. Prévitali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, S. Deleonibus	10
13	3D Vertical interconnects by Copper Direct Bonding 2008 ·(unknown), Pierric Gueguen, Patrice Gergaud, Marc Zussy, D. Lafond, (unknown), M. Rivoire, Daniel Scevola, L. Clavelier	6
14	Chemical interface analysis of as grown HfO[sub 2] ultrathin films on SiO[sub 2] 2007 ·University of Huddersfield Repository (University of Huddersfield) ·(unknown), (unknown), E. Martínez, (unknown), D. Lafond, F. Pierre, O. Renault, S. Lhostis, Paul Bailey, T.C.Q. Noakes, D. Jalabert	3
15	Degradation of floating-gate memory reliability by few electron phenomena 2006 ·IEEE Transactions on Electron Devices ·G. Molas, Damien Deleruyelle, B. De Salvo, G. Ghibaudo, (unknown), L. Perniola, D. Lafond, S. Deleonibus	22
16	Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric 2006 ·J. Widiez, M. Vinet, B. Guillaumot, T. Poiroux, D. Lafond, P. Holliger, O. Weber, V. Barral, B. Prévitali, F. Martín, M. Mouis, S. Deleonibus	2
17	Co-integrated Dual Strained Channels on Fully Depleted sSDOI CMOSFETs with HfO&gt;inf&lt;2&gt;/inf&lt;/TiN Gate Stack down to 15nm Gate Length 2006 ·F. Andrieu, T. Ernst, O. Faynot, Jean-Michel Hartmann, J. Eymery, D. Lafond, C. Dupré, (unknown), C. Fenouillet-Béranger, N. Kernevez, (unknown), (unknown), (unknown), (unknown), B. Ghyselen, C. Mazuré, (unknown), (unknown)	11
18	Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics 2005 ·Solid-State Electronics ·Damien Deleruyelle, G. Molas, B. DeSalvo, M. Gély, D. Lafond	4
19	Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates 2003 ·Journal of Crystal Growth ·Jean‐Michel Hartmann, Alexandra Abbadie, M. Vinet, L. Clavelier, P. Holliger, D. Lafond, M.N. Séméria, P. Gentile	37
20	Fabrication of a novel strained SiGe:C-channel planar 55 nm nMOSFET for high-performance CMOS 2003 ·T. Ernst, Jean‐Michel Hartmann, V. Loup, F. Ducroquet, Philippe Dollfus, (unknown), D. Lafond, (unknown), B. Prévitali, A. Toffoli, S. Deleonibus	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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