O. Faynot

5.7k total citations
163 papers, 2.7k citations indexed

About

O. Faynot is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, O. Faynot has authored 163 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 162 papers in Electrical and Electronic Engineering, 28 papers in Biomedical Engineering and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in O. Faynot's work include Semiconductor materials and devices (149 papers), Advancements in Semiconductor Devices and Circuit Design (148 papers) and Integrated Circuits and Semiconductor Failure Analysis (49 papers). O. Faynot is often cited by papers focused on Semiconductor materials and devices (149 papers), Advancements in Semiconductor Devices and Circuit Design (148 papers) and Integrated Circuits and Semiconductor Failure Analysis (49 papers). O. Faynot collaborates with scholars based in France, United States and Belgium. O. Faynot's co-authors include T. Poiroux, S. Cristoloveanu, T. Ernst, Sylvain Barraud, F. Andrieu, S. Deleonibus, M. Cassé, M. Vinet, R. Coquand and B. Prévitali and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Non-Crystalline Solids.

In The Last Decade

O. Faynot

153 papers receiving 2.6k citations

Peers

Countries citing papers authored by O. Faynot

Since Specialization

Citations

This map shows the geographic impact of O. Faynot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Faynot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Faynot more than expected).

Fields of papers citing papers by O. Faynot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Faynot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Faynot. The network helps show where O. Faynot may publish in the future.

Co-authorship network of co-authors of O. Faynot

This figure shows the co-authorship network connecting the top 25 collaborators of O. Faynot. A scholar is included among the top collaborators of O. Faynot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Faynot. O. Faynot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Analysis of electron mobility in 7-level stacked nanosheet GAA nMOSFETs 2025 ·Solid-State Electronics ·Michelly de Souza, (unknown), (unknown), (unknown), M. Cassé, Sylvain Barraud, O. Faynot, Marcelo Antonio Pavanello	0
2	Experimental Evaluation of 7-Level Stacked Nanosheet SOI MOSFETs Analog Parameters 2024 ·Michelly de Souza, (unknown), (unknown), (unknown), M. Cassé, Sylvain Barraud, O. Faynot, Marcelo Antonio Pavanello	0
3	Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors 2019 ·SPIRE - Sciences Po Institutional REpository ·S. Reboh, R. Coquand, N. Loubet, Nicolas Bernier, E. Augendre, R. Chao, (unknown), (unknown), Raja Muthinti, Victor Boureau, T. Yamashita, O. Faynot	17
4	Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology 2017 ·(unknown), Lei Shen, SangHoon Shin, Nuo Xu, Gang Du, B.-Y. Nguyen, O. Faynot, Muhammad A. Alam, Xi Zhang, Xinyu Liu	10
5	Improved analog performance of SOI Nanowire nMOSFETs Self-Cascode through back-biasing 2017 ·(unknown), Michelly de Souza, M. Cassé, Sylvain Barraud, G. Reimbold, M. Vinet, O. Faynot	0
6	Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies 2014 ·IEEE Transactions on Nuclear Science ·Marc Gaillardin, M. Martinez, Philippe Paillet, M. Raine, F. Andrieu, O. Faynot, Olivier Thomas	35
7	Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor 2013 ·Solid-State Electronics ·Veeresh Deshpande, Sylvain Barraud, X. Jehl, R. Wacquez, M. Vinet, R. Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, B. Prévitali, P. Perreau, T. Poiroux, M. Sanquer, O. Faynot	22
8	Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities 2012 ·Veeresh Deshpande, Sylvain Barraud, X. Jehl, R. Wacquez, M. Vinet, R. Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, B. Prévitali, P. Perreau, T. Poiroux, M. Sanquer, O. Faynot	10
9	Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires 2012 ·M. Cassé, Sylvain Barraud, C. Le Royer, Masahiro Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold	9
10	Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length 2011 ·Symposium on VLSI Technology ·P. Batude, M. Vinet, Chuan Xu, B. Prévitali, C. Tabone, C. Le Royer, L. Sanchez, L. Baud, Laurent Brunet, A. Toffoli, F. Allain, D. Lafond, F. Aussenac, Ο. Thomas, T. Poiroux, O. Faynot	13
11	3D monolithic integration 2011 ·P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	18
12	Drain current variability and MOSFET parameters correlations in planar FDSOI technology 2011 ·(unknown), O. Weber, F. Andrieu, F. Allain, L. Tosti, L. Brévard, O. Rozeau, M.-A. Jaud, P. Perreau, C. Fenouillet-Béranger, (unknown), B. Colombeau, (unknown), G. Ghibaudo, Marie‐Pierre Belleville, O. Faynot, T. Poiroux	21
13	Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI) 2010 ·Solid-State Electronics ·(unknown), F. Andrieu, O. Faynot, J. Eymery	15
14	Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides 2009 ·Solid-State Electronics ·Tamara Rudenko, Valeriya Kilchytska, (unknown), Jean‐Pierre Raskin, F. Andrieu, O. Faynot, Y. Le Tiec, K. Landry, A. N. Nazarov, В. С. Лысенко, Denis Flandre	26
15	First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements 2009 ·IEEE Electron Device Letters ·Émilie Bernard, T. Ernst, B. Guillaumot, Nathalie Vulliet, (unknown), O. Rozeau, F. Danneville, P. Coronel, T. Skotnicki, S. Deleonibus, O. Faynot	15
16	3D nanowire gate-all-around transistors: Specific integration and electrical features 2007 ·Solid-State Electronics ·C. Dupré, T. Ernst, V. Maffini-Alvaro, V. Delaye, Jean‐Michel Hartmann, S. Borel, C. Vizioz, O. Faynot, G. Ghibaudo, S. Deleonibus	23
17	SOI technology performance and modelling 2003 ·J.L. Pelloie, (unknown), C. Raynaud, O. Faynot	5
18	Characterization and simulation of STI isolation for 0.1 /spl mu/m partially-depleted SOI devices 2001 ·C. Fenouillet-Béranger, O. Faynot, C. Tabone, (unknown), (unknown), C. Jahan, (unknown), (unknown), J.L. Pelloie	1
19	Detailed characterization of Unibond material 1997 ·Microelectronic Engineering ·Daniela Munteanu, Christophe Maleville, S. Cristoloveanu, H. Moriceau, B. Aspar, C. Raynaud, O. Faynot, (unknown), (unknown)	6
20	A simple parameter extraction method for ultra-thin oxide MOSFETs 1995 ·Solid-State Electronics ·P.K. McLarty, S. Cristoloveanu, O. Faynot, Veena Misra, John R. Hauser, J. J. Wortman	59

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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