F. Aussenac

1.1k total citations
36 papers, 400 citations indexed

About

F. Aussenac is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, F. Aussenac has authored 36 papers receiving a total of 400 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 7 papers in Biomedical Engineering. Recurrent topics in F. Aussenac's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Advanced Memory and Neural Computing (8 papers). F. Aussenac is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Advanced Memory and Neural Computing (8 papers). F. Aussenac collaborates with scholars based in France, Japan and Belgium. F. Aussenac's co-authors include V. Maffini-Alvaro, C. Vizioz, Jean‐Michel Hartmann, T. Poiroux, C. Comboroure, V. Delaye, R. Coquand, O. Faynot, Sylvain Barraud and Masahiro Koyama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Aussenac

34 papers receiving 388 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Aussenac France 12 382 99 91 44 22 36 400
Gaobo Xu China 13 648 1.7× 91 0.9× 157 1.7× 33 0.8× 27 1.2× 89 677
Huiming Bu United States 8 396 1.0× 102 1.0× 167 1.8× 59 1.3× 20 0.9× 21 475
Chun‐Yen Chang Taiwan 13 466 1.2× 72 0.7× 202 2.2× 70 1.6× 57 2.6× 63 515
J. De Blauwe Belgium 9 469 1.2× 42 0.4× 209 2.3× 56 1.3× 13 0.6× 17 492
Dimitrios Tsamados Switzerland 12 323 0.8× 179 1.8× 49 0.5× 134 3.0× 20 0.9× 40 372
Rob Hendriks Netherlands 9 254 0.7× 105 1.1× 50 0.5× 86 2.0× 24 1.1× 24 324
Xing Lan United States 11 321 0.8× 72 0.7× 111 1.2× 48 1.1× 26 1.2× 24 389
Ran Cheng China 14 615 1.6× 132 1.3× 117 1.3× 101 2.3× 8 0.4× 78 657
Xiao Sun Belgium 9 291 0.8× 28 0.3× 59 0.6× 32 0.7× 29 1.3× 36 325
K. Yamakawa Japan 10 194 0.5× 52 0.5× 93 1.0× 16 0.4× 13 0.6× 31 255

Countries citing papers authored by F. Aussenac

Since Specialization
Citations

This map shows the geographic impact of F. Aussenac's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Aussenac with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Aussenac more than expected).

Fields of papers citing papers by F. Aussenac

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Aussenac. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Aussenac. The network helps show where F. Aussenac may publish in the future.

Co-authorship network of co-authors of F. Aussenac

This figure shows the co-authorship network connecting the top 25 collaborators of F. Aussenac. A scholar is included among the top collaborators of F. Aussenac based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Aussenac. F. Aussenac is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nolot, Emmanuel, F. Aussenac, Nicolas Bernier, et al.. (2024). Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature. physica status solidi (RRL) - Rapid Research Letters. 1 indexed citations
2.
Hartmann, Jean‐Michel, F. Aussenac, David Cooper, et al.. (2024). Advanced SiGe:B Raised Sources and Drains for p-type FD-SOI MOSFETs. ECS Transactions. 114(2). 185–205. 1 indexed citations
3.
Hartmann, Jean-Michel, et al.. (2024). An Assessment of the Lateral Selective Etching, with HCl, of High Versus Low Ge Content SiGe Layers. ECS Transactions. 114(2). 55–73.
4.
Bernard, M., F. Fillot, F. Aussenac, et al.. (2023). Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress. Journal of Applied Physics. 133(7). 4 indexed citations
5.
Gobil, Y., Matthew Charles, F. Aussenac, et al.. (2022). Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts. IEEE Transactions on Electron Devices. 69(10). 5530–5535. 9 indexed citations
6.
Coignus, J., Nicolas Vaxelaire, C. Carabasse, et al.. (2022). Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. 125–128. 2 indexed citations
7.
Coignus, J., François Triozon, C. Carabasse, et al.. (2022). Electrical Assessment of Scaled HfO<sub>2</sub>-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration. 1 indexed citations
8.
Kerdilès, S., Pablo Acosta-Alba, C. Perrot, et al.. (2019). Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack. ECS Transactions. 93(1). 19–22.
9.
Kerdilès, S., Pablo Acosta-Alba, B. Mathieu, et al.. (2017). (Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing. ECS Transactions. 80(4). 215–225. 5 indexed citations
10.
Vianello, Elisa, G. Navarro, C. Carabasse, et al.. (2017). In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors. HAL (Le Centre pour la Communication Scientifique Directe). 2.3.1–2.3.4. 21 indexed citations
11.
Cassé, M., Sylvain Barraud, R. Coquand, et al.. (2013). (Invited) Strain-Enhanced Performance of Si-Nanowire FETs. ECS Transactions. 53(3). 125–136. 4 indexed citations
12.
Navarro, G., A. Persico, F. Aussenac, et al.. (2013). Electrical performances of SiO<inf>2</inf>-doped GeTe for phase-change memory applications. MY.9.1–MY.9.5. 8 indexed citations
13.
Gassilloud, R., C. Leroux, P. Chevalier, et al.. (2013). Investigation of Mg Diffusion in Ta(N) Based Electrodes on HfO2 for Sub-32nm CMOS Gate-Last Transistors. ECS Transactions. 50(4). 177–183. 2 indexed citations
14.
Barraud, Sylvain, R. Coquand, M. Cassé, et al.. (2012). Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm. IEEE Electron Device Letters. 33(11). 1526–1528. 97 indexed citations
15.
Batude, P., M. Vinet, Chuan Xu, et al.. (2011). Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length. Symposium on VLSI Technology. 158–159. 13 indexed citations
16.
17.
Hutin, Louis, C. Le Royer, C. Tabone, et al.. (2009). Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully Processed GeOI Substrates. Journal of The Electrochemical Society. 156(7). H522–H522. 23 indexed citations
18.
Bécu, Stéphane, C. Dupré, V. Maffini-Alvaro, et al.. (2008). Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization. ECS Transactions. 13(1). 195–199. 15 indexed citations
19.
Delaye, V., F. Andrieu, F. Aussenac, et al.. (2008). In-line transmission electron microscopy for micro and nanotechnologies research and development. Microelectronic Engineering. 85(5-6). 1157–1161. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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