Philippe Flatresse

1.4k total citations
59 papers, 877 citations indexed

About

Philippe Flatresse is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Hardware and Architecture. According to data from OpenAlex, Philippe Flatresse has authored 59 papers receiving a total of 877 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 7 papers in Hardware and Architecture. Recurrent topics in Philippe Flatresse's work include Advancements in Semiconductor Devices and Circuit Design (39 papers), Semiconductor materials and devices (36 papers) and Low-power high-performance VLSI design (33 papers). Philippe Flatresse is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (39 papers), Semiconductor materials and devices (36 papers) and Low-power high-performance VLSI design (33 papers). Philippe Flatresse collaborates with scholars based in France, Switzerland and India. Philippe Flatresse's co-authors include Antonio Pullini, Davide Rossi, Luca Benini, Igor Loi, Borivoje Nikolić, Michael Gautschi, Philippe Magarshack, Milovan Blagojević, Andreas Burg and Gilles Gasiot and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Solid-State Electronics and IEEE Transactions on Nuclear Science.

In The Last Decade

Philippe Flatresse

56 papers receiving 844 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Philippe Flatresse France 17 776 243 140 120 36 59 877
E. Alon United States 16 1.1k 1.4× 327 1.3× 272 1.9× 139 1.2× 29 0.8× 28 1.2k
Christian Bachmann Netherlands 18 692 0.9× 137 0.6× 318 2.3× 153 1.3× 37 1.0× 57 877
Adam Teman Israel 23 1.2k 1.5× 363 1.5× 93 0.7× 225 1.9× 50 1.4× 112 1.3k
Jan Rabaey United States 9 764 1.0× 229 0.9× 256 1.8× 168 1.4× 19 0.5× 15 878
Pi-Feng Chiu United States 14 574 0.7× 174 0.7× 52 0.4× 82 0.7× 51 1.4× 31 666
Pascal Meinerzhagen Switzerland 18 704 0.9× 163 0.7× 62 0.4× 183 1.5× 50 1.4× 51 762
Tsung-Te Liu Taiwan 12 544 0.7× 195 0.8× 147 1.1× 70 0.6× 56 1.6× 46 649
Ik‐Joon Chang South Korea 17 1.2k 1.5× 362 1.5× 103 0.7× 123 1.0× 62 1.7× 70 1.3k
Kazutami Arimoto Japan 14 595 0.8× 323 1.3× 80 0.6× 215 1.8× 68 1.9× 140 829
K. Tamaru Japan 10 563 0.7× 205 0.8× 119 0.8× 85 0.7× 31 0.9× 50 663

Countries citing papers authored by Philippe Flatresse

Since Specialization
Citations

This map shows the geographic impact of Philippe Flatresse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philippe Flatresse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philippe Flatresse more than expected).

Fields of papers citing papers by Philippe Flatresse

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philippe Flatresse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philippe Flatresse. The network helps show where Philippe Flatresse may publish in the future.

Co-authorship network of co-authors of Philippe Flatresse

This figure shows the co-authorship network connecting the top 25 collaborators of Philippe Flatresse. A scholar is included among the top collaborators of Philippe Flatresse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Philippe Flatresse. Philippe Flatresse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bertrand, Isabelle, Philippe Flatresse, Jean-Marc Bethoux, et al.. (2022). (G02 Best Paper Award Winner) Development Of High Resistivity FD-SOI Substrates for mmWave Applications. ECS Meeting Abstracts. MA2022-01(29). 1273–1273.
2.
Arnaud, F., Sylvain Clerc, S. Haendler, et al.. (2017). Enhanced design performance thanks to adaptative body biasing technique in FDSOI technolologies. 10 indexed citations
3.
Teman, Adam, et al.. (2017). Multipliers-Driven Perturbation of Coefficients for Low-Power Operation in Reconfigurable FIR Filters. IEEE Transactions on Circuits and Systems I Regular Papers. 64(9). 2388–2400. 17 indexed citations
4.
Zimmer, Brian, Yunsup Lee, Alberto Puggelli, et al.. (2016). A RISC-V Vector Processor With Simultaneous-Switching Switched-Capacitor DC–DC Converters in 28 nm FDSOI. IEEE Journal of Solid-State Circuits. 51(4). 930–942. 51 indexed citations
5.
Rossi, Davide, Francesco Conti, Andrea Marongiu, et al.. (2015). PULP: A parallel ultra low power platform for next generation IoT applications. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 1–39. 86 indexed citations
6.
Rossi, Davide, Antonio Pullini, Igor Loi, et al.. (2015). A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology. Solid-State Electronics. 117. 170–184. 48 indexed citations
7.
Zimmer, Brian, Yunsup Lee, Alberto Puggelli, et al.. (2015). A RISC-V vector processor with tightly-integrated switched-capacitor DC-DC converters in 28nm FDSOI. C316–C317. 25 indexed citations
8.
Flatresse, Philippe. (2014). Process and design solutions for exploiting FD-SOI technology towards energy efficient SOCs. 127–130. 8 indexed citations
9.
Nikolić, Borivoje, Marija Blagojević, Olivier Thomas, Philippe Flatresse, & Andrei Vladimirescu. (2014). Circuit design in nanoscale FDSOI technologies. 3–6. 10 indexed citations
10.
Flatresse, Philippe, et al.. (2013). 2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI. 13 indexed citations
11.
Valentian, Alexandre, Bastien Giraud, Yvain Thonnart, et al.. (2013). Fine grain multi-V<inf>T</inf> co-integration methodology in UTBB FD-SOI technology. 168–173. 12 indexed citations
12.
13.
Thomas, Olivier, Brian Zimmer, N. Planes, et al.. (2012). 6T SRAM design for wide voltage range in 28nm FDSOI. 1–2. 15 indexed citations
14.
Blagojević, Milovan, Olivier Thomas, Amara Amara, et al.. (2012). Planar fully depleted SOI technology: The convergence of high performance and low power towards multimedia mobile applications. 12. 1–4. 14 indexed citations
15.
Valentian, Alexandre, et al.. (2010). Power switch optimization and sizing in 65nm PD-SOI considering supply voltage noise. 186–189. 3 indexed citations
16.
D’Agostino, Carmelo, et al.. (2008). Statistical leakage modeling in CMOS logic gates considering process variations. 301–304. 5 indexed citations
17.
Gasiot, Gilles, Philippe Roché, & Philippe Flatresse. (2008). Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment. 192–194. 19 indexed citations
18.
Flatresse, Philippe, et al.. (2005). A 130nm partially depleted SOI technology menu for-low-power applications. 52–55. 2 indexed citations
19.
20.
Pelloie, J.L., Philippe Flatresse, O. Faynot, & C. Raynaud. (1998). Comprehensive Study and Analytical Modeling of Sub-0.25 um Dynamic Threshold Voltage MOSFET (DTMOS) for Low-Voltage and Low-Power Applications. European Solid-State Device Research Conference. 280–283. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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