Philippe Galy

990 total citations
83 papers, 565 citations indexed

About

Philippe Galy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Philippe Galy has authored 83 papers receiving a total of 565 indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in Philippe Galy's work include Advancements in Semiconductor Devices and Circuit Design (45 papers), Semiconductor materials and devices (45 papers) and Electrostatic Discharge in Electronics (32 papers). Philippe Galy is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (45 papers), Semiconductor materials and devices (45 papers) and Electrostatic Discharge in Electronics (32 papers). Philippe Galy collaborates with scholars based in France, Canada and Switzerland. Philippe Galy's co-authors include F. Arnaud, S. Cristoloveanu, Michel Pioro-Ladrière, Dominique Drouin, Julien Camirand Lemyre, M. Cassé, M. Vinet, S. De Franceschi, Carlos Navarro and Wim Schoenmaker and has published in prestigious journals such as Applied Physics Letters, IEEE Access and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Philippe Galy

77 papers receiving 537 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Philippe Galy France	11	554	101	33	30	27	83	565
S. Haendler France	14	590 1.1×	43 0.4×	15 0.5×	56 1.9×	20 0.7×	62	599
H. Iizuka Japan	11	327 0.6×	58 0.6×	11 0.3×	22 0.7×	42 1.6×	27	343
N. Rambal France	6	114 0.2×	102 1.0×	41 1.2×	20 0.7×	24 0.9×	16	177
Julien Jussot Belgium	10	193 0.3×	104 1.0×	51 1.5×	44 1.5×	96 3.6×	24	265
Karen Nummy United States	6	255 0.5×	129 1.3×	40 1.2×	44 1.5×	13 0.5×	22	279
Dieter Knoll Germany	15	537 1.0×	143 1.4×	39 1.2×	55 1.8×	31 1.1×	38	548
Haiwen Xu Singapore	10	266 0.5×	51 0.5×	17 0.5×	34 1.1×	66 2.4×	46	296
S. Jallepalli United States	10	474 0.9×	130 1.3×	4 0.1×	19 0.6×	36 1.3×	28	494
Sagi Mathai United States	14	460 0.8×	127 1.3×	16 0.5×	67 2.2×	19 0.7×	57	481
Masashige Ishizaka Japan	10	502 0.9×	237 2.3×	26 0.8×	44 1.5×	10 0.4×	34	508

Countries citing papers authored by Philippe Galy

Since Specialization

Citations

This map shows the geographic impact of Philippe Galy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philippe Galy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philippe Galy more than expected).

Fields of papers citing papers by Philippe Galy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philippe Galy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philippe Galy. The network helps show where Philippe Galy may publish in the future.

Co-authorship network of co-authors of Philippe Galy

This figure shows the co-authorship network connecting the top 25 collaborators of Philippe Galy. A scholar is included among the top collaborators of Philippe Galy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Philippe Galy. Philippe Galy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Beaudoin, F., et al.. (2024). Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device. Solid-State Electronics. 215. 108883–108883. 1 indexed citations

Garg, Nikhil, Yann Beilliard, Lorena Anghel, et al.. (2024). Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy. Journal of Low Power Electronics and Applications. 14(4). 50–50. 1 indexed citations

Garg, Nikhil, Yann Beilliard, F. Arnaud, et al.. (2024). 28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs. SPIRE - Sciences Po Institutional REpository. 1(1). 7 indexed citations

Mir, Salvador, et al.. (2024). LUT-Based Design of a Cryogenic Cascode LNA with Simultaneous Noise and Power Matching. SPIRE - Sciences Po Institutional REpository. 65–69.

Beaudoin, F., Chenyi Zhou, Julien Camirand Lemyre, et al.. (2023). Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations. Solid-State Electronics. 204. 108626–108626. 4 indexed citations

Beilliard, Yann, F. Arnaud, Kévin Garello, et al.. (2023). A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. Solid-State Electronics. 209. 108779–108779. 2 indexed citations

Beaudoin, F., et al.. (2022). Robust technology computer-aided design of gated quantum dots at cryogenic temperature. Applied Physics Letters. 120(26). 10 indexed citations

Navarro, Carlos, F. Gámiz, Philippe Galy, et al.. (2021). Improved Retention Characteristics of Z ² -FET Employing Half Back-Gate Control. IEEE Transactions on Electron Devices. 68(3). 1041–1044. 4 indexed citations

Cassé, M., Bruna Cardoso Paz, G. Ghibaudo, et al.. (2020). Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K. Applied Physics Letters. 116(24). 13 indexed citations

10.

Navarro, Carlos, Philippe Galy, S. Cristoloveanu, et al.. (2020). Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors. IEEE Electron Device Letters. 41(3). 361–364. 4 indexed citations

11.

Fenouillet-Béranger, C., et al.. (2019). A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application. Solid-State Electronics. 168. 107717–107717. 3 indexed citations

12.

Márquez, Carlos, Santiago Navarro, Carlos Navarro, et al.. (2019). Temperature and Gate Leakage Influence on the Z²-FET Memory Operation. 238–241. 3 indexed citations

13.

Galy, Philippe, et al.. (2018). Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration. IEEE Journal of the Electron Devices Society. 6. 594–600. 70 indexed citations

14.

Cristoloveanu, S., et al.. (2017). Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation. IEEE Transactions on Electron Devices. 64(3). 916–922. 6 indexed citations

15.

Bawedin, Maryline, et al.. (2017). Ultrathin FDSOI four-gate transistors (G 4 -FETs). Microelectronic Engineering. 180. 1–4. 1 indexed citations

16.

Galy, Philippe, et al.. (2013). Point to point ESD protection network, a flexible and competitive strategy demonstrated in advanced CMOS technology. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 6 indexed citations

17.

Golanski, Dominique, P. Fonteneau, C. Fenouillet-Béranger, et al.. (2013). First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration. 22 indexed citations

18.

Fenouillet-Béranger, C., S. Monfray, Philippe Galy, et al.. (2010). Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration. 1–6. 4 indexed citations

19.

Galy, Philippe, et al.. (2010). TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior. 1–10. 6 indexed citations

20.

Flatresse, Philippe, et al.. (2006). Electro-thermal short pulsed simulation for SOI technology. Microelectronics Reliability. 46(9-11). 1482–1485. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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