F. Allain

1.8k total citations
36 papers, 559 citations indexed

About

F. Allain is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Allain has authored 36 papers receiving a total of 559 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Allain's work include Advancements in Semiconductor Devices and Circuit Design (33 papers), Semiconductor materials and devices (32 papers) and Nanowire Synthesis and Applications (8 papers). F. Allain is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (33 papers), Semiconductor materials and devices (32 papers) and Nanowire Synthesis and Applications (8 papers). F. Allain collaborates with scholars based in France, Czechia and Switzerland. F. Allain's co-authors include T. Poiroux, O. Faynot, M. Cassé, O. Weber, B. Prévitali, C. Tabone, M. Vinet, D. Lafond, S. Deleonibus and Jean‐Michel Hartmann and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

F. Allain

35 papers receiving 540 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Allain France 13 549 78 29 25 14 36 559
C. Kuo United States 5 499 0.9× 74 0.9× 29 1.0× 29 1.2× 19 1.4× 9 516
F. Andrieu France 15 803 1.5× 94 1.2× 52 1.8× 50 2.0× 11 0.8× 60 810
Shiying Xiong United States 5 419 0.8× 65 0.8× 30 1.0× 23 0.9× 15 1.1× 5 435
Ralf Pijper Netherlands 12 441 0.8× 41 0.5× 29 1.0× 20 0.8× 7 0.5× 36 457
N. Ikezawa Japan 9 313 0.6× 64 0.8× 23 0.8× 32 1.3× 19 1.4× 16 328
Andrew R. Brown United Kingdom 9 284 0.5× 51 0.7× 43 1.5× 9 0.4× 13 0.9× 23 294
R.A. Bianchi France 11 410 0.7× 87 1.1× 25 0.9× 13 0.5× 11 0.8× 20 431
Wladek Grabinski Switzerland 12 496 0.9× 129 1.7× 49 1.7× 15 0.6× 8 0.6× 40 514
J. Lacord France 10 376 0.7× 85 1.1× 21 0.7× 23 0.9× 11 0.8× 34 385
Sweta Chander India 16 773 1.4× 211 2.7× 27 0.9× 18 0.7× 17 1.2× 58 793

Countries citing papers authored by F. Allain

Since Specialization
Citations

This map shows the geographic impact of F. Allain's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Allain with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Allain more than expected).

Fields of papers citing papers by F. Allain

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Allain. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Allain. The network helps show where F. Allain may publish in the future.

Co-authorship network of co-authors of F. Allain

This figure shows the co-authorship network connecting the top 25 collaborators of F. Allain. A scholar is included among the top collaborators of F. Allain based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Allain. F. Allain is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Royer, C. Le, P. Batude, C. Fenouillet-Béranger, et al.. (2018). New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration. Solid-State Electronics. 144. 78–85. 6 indexed citations
2.
Morvan, E., et al.. (2016). Leakage Current Paths in Isolated AlGaN/GaN Heterostructures. IEEE Transactions on Semiconductor Manufacturing. 29(4). 363–369. 6 indexed citations
3.
Fenouillet-Béranger, C., Jean‐Michel Hartmann, Philippe Rodriguez, et al.. (2016). Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors. ECS Transactions. 75(8). 51–58. 1 indexed citations
4.
Royer, C. Le, Louis Hutin, S. Martinie, et al.. (2015). Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. Solid-State Electronics. 115. 167–172. 11 indexed citations
5.
Barraud, Sylvain, M. Cassé, P. Nguyen, et al.. (2015). Opportunities and challenges of nanowire-based CMOS technologies. 80. 1–3. 11 indexed citations
6.
Barraud, Sylvain, Romain Laviéville, C. Tabone, et al.. (2014). Strained Silicon Directly on Insulator N- and P-FET nanowire transistors. 65–68. 15 indexed citations
7.
Nguyen, P., Sylvain Barraud, Masahiro Koyama, et al.. (2014). High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique. 1–2. 3 indexed citations
8.
Nemouchi, F., V. Carron, Y. Morand, et al.. (2013). Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain. ECS Transactions. 50(9). 197–204. 3 indexed citations
9.
Royer, C. Le, M. Cassé, Jean‐Michel Hartmann, et al.. (2013). Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET. IEEE Transactions on Electron Devices. 60(12). 4079–4084. 19 indexed citations
10.
Barraud, Sylvain, R. Coquand, Jean‐Michel Hartmann, et al.. (2013). Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length. IEEE Electron Device Letters. 34(9). 1103–1105. 14 indexed citations
11.
Batude, P., M. Vinet, Chuan Xu, et al.. (2011). Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length. Symposium on VLSI Technology. 158–159. 13 indexed citations
12.
Batude, P., M. Vinet, A. Pouydebasque, et al.. (2011). 3D monolithic integration. 2233–2236. 18 indexed citations
13.
Weber, O., F. Andrieu, F. Allain, et al.. (2011). Drain current variability and MOSFET parameters correlations in planar FDSOI technology. 25.5.1–25.5.4. 21 indexed citations
14.
15.
Reimbold, G., F. Allain, A. Toffoli, et al.. (2010). Investigation of mechanisms shifting metal effective workfunction towards P+ for various Al incorporation scenarii. 84–85. 2 indexed citations
16.
Pouydebasque, A., C. Le Royer, C. Tabone, et al.. (2009). Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs. IEEE Transactions on Electron Devices. 56(12). 3240–3244. 7 indexed citations
17.
Allain, F., O. Faynot, M. Cassé, et al.. (2007). Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts. 2 indexed citations
18.
Gallon, C., A. Vandooren, F. Bœuf, et al.. (2006). Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster. 99. 17–18. 12 indexed citations
19.
Jahan, C., O. Faynot, M. Cassé, et al.. (2005). ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm. 112–113. 18 indexed citations
20.
Caillat, C., S. Deleonibus, G. Guégan, et al.. (2002). A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching. Solid-State Electronics. 46(3). 349–352. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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