M. Rivoire

1.1k citations

47 papers · 552 indexed · h-index 14

Impact in

Electronic, Optical and Magnetic Materials top 10%
- Copper Interconnects and Reliability
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electronic, Optical and Magnetic Materials 12
- Magnetic Properties and Applications 7
Condensed Matter Physics 7

Co-authors: G. Suran Pierric Gueguen L. Clavelier L. Di Cioccio D. Lafond Daniel Scevola Marc Zussy T. Skotnicki
Journals: Journal of Applied Physics (6 papers)Journal of Magnetism and Magnetic Materials (5 papers)Microelectronic Engineering (3 papers)IEEE Electron Device Letters (2 papers)Physical Review B (1 paper)
Partner nations: France Switzerland United States

In The Last Decade

M. Rivoire

43 papers receiving 529 citations

Peers

Countries citing papers authored by M. Rivoire

Since Specialization

Citations

This map shows the geographic impact of M. Rivoire's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rivoire with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rivoire more than expected).

Fields of papers citing papers by M. Rivoire

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rivoire. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rivoire. The network helps show where M. Rivoire may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Rivoire, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Rivoire Line = papers co-authored together M. Rivoire links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High resolution nanotopography characterization at die scale of 28nm FDSOI CMOS front-end CMP processes Microelectronic Engineering ·Florent Dettoni, M. Rivoire, S. Gaillard, O. Hinsinger, F. Bertin, C. Beitia	2013	10
2	Slurry selectivity influence on STI and POP processes for RMG application C. Euvrard, Carine Perrot, A. Seignard, F. Dettoni, M. Rivoire	2012	2
3	CMP Process Optimization for Bonding Applications V. Balan, A. Seignard, Daniel Scevola, Jean-Francois Lugand, L. Di Cioccio, M. Rivoire	2012	4
4	Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain IEEE Electron Device Letters ·M. Vinet, T. Poiroux, Christophe Licitra, J. Widiez, Jyotshna Bhandari, B. Prévitali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, S. Deleonibus	2009	10
5	Enabling 3D interconnects with metal direct bonding L. Di Cioccio, Pierric Gueguen, Thomas Signamarcheix, M. Rivoire, D. Scevolab, Regis Cahours, Patrick Leduc, M. Assous, L. Clavelier	2009	6
6	Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches IEEE Electron Device Letters ·B. Ramadout, Guo‐Neng Lu, J.-P. Carrere, L. Pinzelli, C. Perrot, M. Rivoire, F. Nemouchi	2009	4
7	Highly performant FDSOI pMOSFETs with metallic source/drain T. Poiroux, M. Vinet, F. Nemouchi, V. Carron, Y. Morand, B. Prévitali, S. Descombes, L. Tosti, O. Cueto, L. Baud, V. Balan, M. Rivoire, S. Deleonibus, O. Faynot	2009	3
8	3D Vertical interconnects by Copper Direct Bonding L. DiCioccio, Pierric Gueguen, Patrice Gergaud, Marc Zussy, D. Lafond, Jean Pierre Gonchond, M. Rivoire, Daniel Scevola, L. Clavelier	2008	6
9	Copper Direct Bonding Characterization and its Interests for 3D Integration Circuits ECS Transactions ·Pierric Gueguen, L. Di Cioccio, Patrice Gergaud, M. Rivoire, Daniel Scevola, Marc Zussy, Anne Marie Charvet, Laurent Bally, D. Lafond, L. Clavelier	2008	10
10	Full Copper Electrochemical Mechanical Planarization (Ecmp) as a Technology Enabler for the 45 and 32nm Nodes M. Mellier, T. Berger, Romain Duru, M. Zaleski, M. C. Luche, M. Rivoire, Cindy Goldberg, G. Wyborn, K. H. Chang, Y. Wang, V. Ripoche, Stan Tsai, M. Thothadri, W.W. Hsu, L. Chen	2007	4
11	Towards a better EOT - mobility trade-off in high-k oxide/metal gate CMOS devices Markus Müller, S. Duguay, B. Guillaumot, X. Garros, C. Leroux, B. Tavel, F. Martín, M. Rivoire, D. Delille, F. Bœuf, S. Deleonibus, T. Skotnicki	2004	4
12	Structural and magnetic anisotropies ofFe∕ZnSe(001)thin films Physical Review B ·M. Marangolo, Fredrik Gustavsson, G.M. Guichar, M. Eddrief, J. Varalda, V. H. Etgens, M. Rivoire, F. Gendron, H. Magnan, D. H. Mosca, J.-M. George	2004	22
13	High performance 40 nm nMOSFETs with HfO/sub 2/ gate dielectric and polysilicon damascene gate B. Tavel, X. Garros, T. Skotnicki, F. Martín, C. Leroux, D. Bensahel, M.N. Séméria, Y. Morand, J.-F. Damlencourt, S. Descombes, F. Leverd, Y. Le-Friec, Philip R. LeDuc, M. Rivoire, S. Jullian, R. Pantel	2003	5
14	Integration of Cu/SiOC in dual damascene interconnect for 0.1 μm technology using a new SiC material as dielectric barrier M. Fayolle, J. Torrès, G. Passemard, Florence Fusalba, Gilles L. Fanget, D. Louis, L. Arnaud, V. Girault, J. Cluzel, H. Feldis, M. Rivoire, O. Louveau, Thierry Mourier, Lucile Broussous	2003	4
15	Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching B. Tavel, T. Skotnicki, G. Parès, N. Carriere, M. Rivoire, F. Leverd, C. Julien, J. Torres, R. Pantel	2002	44
16	STI process steps for sub-quarter micron CMOS Microelectronics Reliability ·P. Sallagoity, F. Gaillard, M. Rivoire, M. Paoli, M. Haond, S McClathie	1998	16
17	Magnetization of thin films with in-plane uniaxial anisotropy studied by microwave absorption Journal of Applied Physics ·M. Rivoire, G. Suran	1995	25
18	Induced, local anisotropy and anisotropy dispersion in amorphous Co-Zr-rare earth thin films IEEE Transactions on Magnetics ·M. Rivoire, H. Ouahmane, G. Suran, Montserrat Rivas, J.A. Corrales, M. C. Contreras	1993	2
19	Spin-wave resonance in Fe-amorphous FeCrB multilayered structures Journal of Magnetism and Magnetic Materials ·M. Rivoire, G. Suran, H.J. de Wit, F.W.A. Dirne	1991	2
20	Magnetic studies on metallic glass type films Journal of Applied Physics ·M. Rivoire, R. Krishnan, P. Rougier, J. Sztern, C. Sella	1981	1

About M. Rivoire

M. Rivoire is a scholar working on Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Automotive Engineering, having authored 47 papers that have together received 552 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Metallic Glasses and Amorphous Alloys (12 papers), Magnetic properties of thin films (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), 3D IC and TSV technologies (9 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Electronic Packaging and Soldering Technologies (8 papers) and Magnetic Properties and Applications (7 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (184 citations), Electrical and Electronic Engineering (397 citations), Atomic and Molecular Physics, and Optics (163 citations), Condensed Matter Physics (50 citations) and Automotive Engineering (43 citations). M. Rivoire has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include G. Suran, Pierric Gueguen, L. Clavelier, L. Di Cioccio, D. Lafond, Daniel Scevola, Marc Zussy, T. Skotnicki, B. Tavel and F. Gendron. Their work appears in journals such as Journal of Applied Physics, Journal of Magnetism and Magnetic Materials, Microelectronic Engineering, IEEE Electron Device Letters and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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