Byron Ho

602 total citations
15 papers, 181 citations indexed

About

Byron Ho is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Byron Ho has authored 15 papers receiving a total of 181 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Byron Ho's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Byron Ho is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Byron Ho collaborates with scholars based in United States, France and Switzerland. Byron Ho's co-authors include Tsu‐Jae King Liu, Nuo Xu, Xin Sun, Victor Moroz, Munkang Choi, Changhwan Shin, Bich-Yen Nguyen, O. Weber, F. Andrieu and Olivier Faynot and has published in prestigious journals such as Clinical Chemistry, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Byron Ho

14 papers receiving 168 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Byron Ho United States 8 153 27 17 14 10 15 181
Xueting Luo China 8 71 0.5× 19 0.7× 9 0.5× 24 1.7× 6 0.6× 17 147
Hamed Arianfard Australia 6 82 0.5× 34 1.3× 2 0.1× 9 0.6× 62 6.2× 15 107
Masoud Kahrizi United States 6 63 0.4× 16 0.6× 5 0.3× 9 0.6× 6 85
Ke-Fei Wu China 5 23 0.2× 43 1.6× 4 0.2× 2 0.1× 15 1.5× 11 80
X. R. Chen China 3 21 0.1× 5 0.2× 5 0.3× 8 0.6× 15 1.5× 9 55
Dongliang Jiang China 3 277 1.8× 15 0.6× 33 1.9× 3 0.2× 108 10.8× 6 296
M. Printz Germany 4 32 0.2× 14 0.5× 19 1.4× 6 0.6× 10 59
T. Tamagawa Japan 5 37 0.2× 8 0.3× 7 0.4× 1 0.1× 7 0.7× 15 43
K Katarzyna Lawniczuk Netherlands 9 198 1.3× 12 0.4× 4 0.2× 1 0.1× 75 7.5× 34 209
Y. Xie China 6 28 0.2× 11 0.4× 1 0.1× 6 0.4× 5 0.5× 17 89

Countries citing papers authored by Byron Ho

Since Specialization
Citations

This map shows the geographic impact of Byron Ho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Byron Ho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Byron Ho more than expected).

Fields of papers citing papers by Byron Ho

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Byron Ho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Byron Ho. The network helps show where Byron Ho may publish in the future.

Co-authorship network of co-authors of Byron Ho

This figure shows the co-authorship network connecting the top 25 collaborators of Byron Ho. A scholar is included among the top collaborators of Byron Ho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Byron Ho. Byron Ho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Xu, Nuo, Byron Ho, Vinh Cao Trần, et al.. (2013). Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications. Symposium on VLSI Technology. 1 indexed citations
2.
Ho, Byron. (2012). Evolutionary MOSFET Structure and Channel Design for Nanoscale CMOS Technology. eScholarship (California Digital Library). 6 indexed citations
3.
Xu, Nuo, Byron Ho, Munkang Choi, Victor Moroz, & Tsu‐Jae King Liu. (2012). Effectiveness of Stressors in Aggressively Scaled FinFETs. IEEE Transactions on Electron Devices. 59(6). 1592–1598. 34 indexed citations
4.
Xu, Nuo, Byron Ho, F. Andrieu, et al.. (2012). Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs. IEEE Electron Device Letters. 33(3). 318–320. 22 indexed citations
5.
Ho, Byron, Nuo Xu, Vinh Cao Trần, et al.. (2012). Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence. IEEE Transactions on Electron Devices. 60(1). 153–158. 5 indexed citations
6.
Ho, Byron, Xin Sun, Nuo Xu, et al.. (2012). First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability. IEEE Transactions on Electron Devices. 59(8). 2273–2276. 7 indexed citations
7.
Ho, Byron, Xin Sun, Changhwan Shin, & Tsu‐Jae King Liu. (2012). Design Optimization of Multigate Bulk MOSFETs. IEEE Transactions on Electron Devices. 60(1). 28–33. 27 indexed citations
8.
Ho, Byron, Nuo Xu, & Tsu‐Jae King Liu. (2012). pMOSFET Performance Enhancement With Strained $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Channels. IEEE Transactions on Electron Devices. 59(5). 1468–1474. 8 indexed citations
9.
Xu, Nuo, F. Andrieu, Byron Ho, et al.. (2012). Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs. 113–114. 19 indexed citations
10.
Matheu, Peter, Byron Ho, Zachery A. Jacobson, & Tsu‐Jae King Liu. (2012). Planar GeOI TFET Performance Improvement With Back Biasing. IEEE Transactions on Electron Devices. 59(6). 1629–1635. 17 indexed citations
11.
Ho, Byron, et al.. (2011). Fabrication of segmented-channel MOSFETs for reduced short-channel effects. 1–2. 1 indexed citations
12.
Ho, Byron, Nuo Xu, & Tsu‐Jae King Liu. (2011). Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain Tunneling. IEEE Transactions on Electron Devices. 58(9). 2895–2902. 7 indexed citations
13.
Tran, Helen, et al.. (2010). Electrical Characterization of Etch Rate for Micro- and Nano-Scale Gap Formation. Journal of Microelectromechanical Systems. 19(5). 1260–1263. 1 indexed citations
14.
Ho, Byron, et al.. (2010). Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates. MRS Proceedings. 1252. 1 indexed citations
15.
Ho, Byron, et al.. (1983). Dipalmitoylphosphatidylcholine in amniotic fluid quantified by fast-atom-bombardment mass spectrometry.. Clinical Chemistry. 29(7). 1349–1353. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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