C. Le Royer

3.7k total citations
142 papers, 2.3k citations indexed

About

C. Le Royer is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Le Royer has authored 142 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 139 papers in Electrical and Electronic Engineering, 22 papers in Biomedical Engineering and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Le Royer's work include Semiconductor materials and devices (128 papers), Advancements in Semiconductor Devices and Circuit Design (110 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C. Le Royer is often cited by papers focused on Semiconductor materials and devices (128 papers), Advancements in Semiconductor Devices and Circuit Design (110 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C. Le Royer collaborates with scholars based in France, United States and Italy. C. Le Royer's co-authors include S. Cristoloveanu, A. Zaslavsky, Jing Wan, C. Tabone, F. Mayer, S. Deleonibus, L. Clavelier, Jean‐Michel Hartmann, B. Prévitali and M. Vinet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Le Royer

138 papers receiving 2.2k citations

Peers

Countries citing papers authored by C. Le Royer

Since Specialization

Citations

This map shows the geographic impact of C. Le Royer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Le Royer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Le Royer more than expected).

Fields of papers citing papers by C. Le Royer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Le Royer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Le Royer. The network helps show where C. Le Royer may publish in the future.

Co-authorship network of co-authors of C. Le Royer

This figure shows the co-authorship network connecting the top 25 collaborators of C. Le Royer. A scholar is included among the top collaborators of C. Le Royer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Le Royer. C. Le Royer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Measurement of the properties of the dust acoustic wave in a magnetic field 2025 ·Journal of Plasma Physics ·Jeremiah Williams, C. Le Royer, Saikat Chakraborty Thakur, Edward Thomas, Skip Williams	0
2	Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations 2023 ·SPIRE - Sciences Po Institutional REpository ·(unknown), (unknown), (unknown), (unknown), (unknown), Patricia Pimenta‐Barros, (unknown), Laura Vauche, C. Le Royer	2
3	Impact of strain on access resistance in planar and nanowire CMOS devices 2017 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), (unknown), François Triozon, M. Cassé, L. Bourdet, G. Ghibaudo, D. Rideau, Yann‐Michel Niquet, Sylvain Barraud, P. Nguyen, C. Le Royer, J. Lacord, C. Tabone, O. Rozeau, D. Dutartre, A. Claverie, E. Josse, F. Andrieu, M. Vinet	4
4	Mechanical simulations of BOX creep for strained FDSOI 2017 ·(unknown), F. Andrieu, (unknown), D. Dutartre, C. Le Royer, M. Vinet, A. Claverie	1
5	Effects of electrical stress and ionizing radiation on Si-based TFETs 2015 ·Institutional Research Information System (University of Udine) ·Lili Ding, Simone Gerardin, A. Paccagnella, Elena Gnani, Marta Bagatin, F. Driussi, L. Selmi, C. Le Royer	3
6	Sharp-Switching High-Current Tunneling Devices 2013 ·ECS Transactions ·A. Zaslavsky, Jing Wan, Son Thai Le, (unknown), (unknown), C. Le Royer, Daniel E. Perea, Shadi A. Dayeh, S. T. Picraux	1
7	Z<sup>2</sup>-FET: A zero-slope switching device with gate-controlled hysteresis 2012 ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	16
8	Z<sup>2</sup>-FET used as 1-transistor high-speed DRAM 2012 ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	15
9	TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model 2012 ·Microelectronic Engineering ·Arnab Biswas, Surya Shankar Dan, C. Le Royer, Wladek Grabinski, Adrian M. Ionescu	114
10	Innovative capacitorless SOI DRAMs 2012 ·S. Cristoloveanu, M. Bawedin, Jing Wan, Sung‐Jae Chang, Carlos Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, Noel Rodríguez, F. Gámiz	1
11	Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length 2011 ·Symposium on VLSI Technology ·P. Batude, M. Vinet, Chuan Xu, B. Prévitali, C. Tabone, C. Le Royer, L. Sanchez, L. Baud, Laurent Brunet, A. Toffoli, F. Allain, D. Lafond, F. Aussenac, Ο. Thomas, T. Poiroux, O. Faynot	13
12	3D monolithic integration 2011 ·P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	18
13	Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature 2010 ·(unknown), P. Batude, (unknown), C. Le Royer, Louis Hutin, A. Pouydebasque, (unknown), B. Prévitali, M. Vinet, M. Mouis, (unknown)	1
14	Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues 2008 ·IEEE Transactions on Electron Devices ·F. Mayer, C. Le Royer, D. Blachier, L. Clavelier, S. Deleonibus	6
15	First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage 2008 ·A. Pouydebasque, C. Le Royer, C. Tabone, K. Romanjek, E. Augendre, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, (unknown), R. Truche, L. Clavelier, S. Deleonibus	8
16	Impact of SOI, Si<inf>1-x</inf>Ge<inf>x</inf>OI and GeOI substrates on CMOS compatible Tunnel FET performance 2008 ·F. Mayer, C. Le Royer, J.-F. Damlencourt, K. Romanjek, F. Andrieu, C. Tabone, B. Prévitali, S. Deleonibus	198
17	紫外線と軟X線光電子分光法で測定したHfO2/GeON/Ge積層膜のバンドオフセット 2007 ·Applied Physics Letters ·(unknown), O. Renault, (unknown), L. Clavelier, C. Le Royer, Christophe Licitra, (unknown), Jean‐Michel Hartmann, V. Loup, L. Vandroux, M.-J. Guittet, N. Barrett	1
18	High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers 2007 ·L. Clavelier, (unknown), C. Le Royer, Benjamin Vincent, Y. Morand, Y. Campidelli, Jean‐Michel Hartmann, E. Martínez, (unknown), S. Cristoloveanu, S. Deleonibus, D. Bensahel	3
19	Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit 2006 ·IEEE Transactions on Electron Devices ·F. Mayer, C. Le Royer, G. Le Carval, L. Clavelier, S. Deleonibus	42
20	Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory 2002 ·TechConnect Briefs ·D. Fraboulet, G. Le Carval, C. Le Royer, M. Sanquer	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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