C. Le Royer

3.7k total citations
142 papers, 2.3k citations indexed

About

C. Le Royer is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Le Royer has authored 142 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 139 papers in Electrical and Electronic Engineering, 22 papers in Biomedical Engineering and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Le Royer's work include Semiconductor materials and devices (128 papers), Advancements in Semiconductor Devices and Circuit Design (110 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C. Le Royer is often cited by papers focused on Semiconductor materials and devices (128 papers), Advancements in Semiconductor Devices and Circuit Design (110 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C. Le Royer collaborates with scholars based in France, United States and Italy. C. Le Royer's co-authors include S. Cristoloveanu, A. Zaslavsky, Jing Wan, C. Tabone, F. Mayer, S. Deleonibus, L. Clavelier, Jean‐Michel Hartmann, B. Prévitali and M. Vinet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Le Royer

138 papers receiving 2.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
C. Le Royer	2.2k	508	212	153	57	142	2.3k
O. Faynot	2.6k 1.2×	505 1.0×	177 0.8×	204 1.3×	19 0.3×	163	2.7k
Meishoku Masahara	2.4k 1.1×	371 0.7×	200 0.9×	204 1.3×	34 0.6×	232	2.5k
Tomohisa Mizuno	2.1k 1.0×	608 1.2×	263 1.2×	278 1.8×	10 0.2×	126	2.2k
K. Mistry	2.2k 1.0×	324 0.6×	191 0.9×	177 1.2×	16 0.3×	56	2.3k
S. Deleonibus	2.8k 1.2×	547 1.1×	430 2.0×	384 2.5×	28 0.5×	217	2.9k
Geert Hellings	1.8k 0.8×	394 0.8×	272 1.3×	242 1.6×	49 0.9×	204	2.0k
Jérôme Mitard	3.1k 1.4×	461 0.9×	370 1.7×	350 2.3×	39 0.7×	234	3.1k
S. Biesemans	2.4k 1.1×	326 0.6×	736 3.5×	278 1.8×	27 0.5×	171	2.5k
T. Poiroux	2.0k 0.9×	458 0.9×	181 0.9×	109 0.7×	19 0.3×	125	2.1k
A. Murthy	1.5k 0.7×	415 0.8×	204 1.0×	191 1.2×	21 0.4×	13	1.6k

Countries citing papers authored by C. Le Royer

Since Specialization

Citations

This map shows the geographic impact of C. Le Royer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Le Royer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Le Royer more than expected).

Fields of papers citing papers by C. Le Royer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Le Royer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Le Royer. The network helps show where C. Le Royer may publish in the future.

Co-authorship network of co-authors of C. Le Royer

This figure shows the co-authorship network connecting the top 25 collaborators of C. Le Royer. A scholar is included among the top collaborators of C. Le Royer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Le Royer. C. Le Royer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Williams, Jeremiah, C. Le Royer, Saikat Chakraborty Thakur, Edward Thomas, & Skip Williams. (2025). Measurement of the properties of the dust acoustic wave in a magnetic field. Journal of Plasma Physics. 91(1).

Pimenta‐Barros, Patricia, et al.. (2023). Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations. SPIRE - Sciences Po Institutional REpository. 382–385. 2 indexed citations

Leroux, C., J. Cluzel, Laura Vauche, et al.. (2021). Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function. Solid-State Electronics. 184. 108078–108078. 7 indexed citations

Royer, C. Le, P. Batude, C. Fenouillet-Béranger, et al.. (2018). New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration. Solid-State Electronics. 144. 78–85. 6 indexed citations

Triozon, François, M. Cassé, L. Bourdet, et al.. (2017). Impact of strain on access resistance in planar and nanowire CMOS devices. HAL (Le Centre pour la Communication Scientifique Directe). T224–T225. 4 indexed citations

Andrieu, F., et al.. (2017). Mechanical simulations of BOX creep for strained FDSOI. 91–94. 1 indexed citations

Ding, Lili, Simone Gerardin, A. Paccagnella, et al.. (2015). Effects of electrical stress and ionizing radiation on Si-based TFETs. Institutional Research Information System (University of Udine). 137–140. 3 indexed citations

Wan, Jing, C. Le Royer, A. Zaslavsky, & S. Cristoloveanu. (2012). Z<sup>2</sup>-FET: A zero-slope switching device with gate-controlled hysteresis. 1–4. 16 indexed citations

Wan, Jing, C. Le Royer, A. Zaslavsky, & S. Cristoloveanu. (2012). Z<sup>2</sup>-FET used as 1-transistor high-speed DRAM. 197–200. 15 indexed citations

10.

Biswas, Arnab, Surya Shankar Dan, C. Le Royer, Wladek Grabinski, & Adrian M. Ionescu. (2012). TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model. Microelectronic Engineering. 98. 334–337. 114 indexed citations

11.

Batude, P., M. Vinet, Chuan Xu, et al.. (2011). Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length. Symposium on VLSI Technology. 158–159. 13 indexed citations

12.

Batude, P., M. Vinet, A. Pouydebasque, et al.. (2011). 3D monolithic integration. 2233–2236. 18 indexed citations

13.

Scheiblin, P., et al.. (2010). In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation. Solid-State Electronics. 57(1). 67–72. 11 indexed citations

14.

Damlencourt, Jean‐François, Benjamin Vincent, L. Clavelier, et al.. (2009). Morphological and Electrical Comparison of GeOI Enriched Structures Obtained from SOI and sSOI Substrates. ECS Transactions. 19(4). 93–98. 2 indexed citations

15.

Pouydebasque, A., C. Le Royer, C. Tabone, et al.. (2008). First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage. 16–17. 8 indexed citations

16.

Royer, C. Le, L. Clavelier, C. Tabone, et al.. (2008). 105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers. Solid-State Electronics. 52(9). 1285–1290. 24 indexed citations

17.

Renault, O., L. Clavelier, C. Le Royer, et al.. (2007). 紫外線と軟X線光電子分光法で測定したHfO2/GeON/Ge積層膜のバンドオフセット. Applied Physics Letters. 90(5). 53508–53508. 1 indexed citations

18.

Clavelier, L., C. Le Royer, Benjamin Vincent, et al.. (2007). High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers. 83. 19–20. 3 indexed citations

19.

Pala, Marco, C. Le Royer, G. Le Carval, & L. Clavelier. (2006). Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs. Journal of Computational Electronics. 5(2-3). 241–245. 4 indexed citations

20.

Fraboulet, D., G. Le Carval, C. Le Royer, & M. Sanquer. (2002). Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory. TechConnect Briefs. 1(2002). 205–208. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact