R. Gwoziecki

2.0k total citations
91 papers, 1.5k citations indexed

About

R. Gwoziecki is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Gwoziecki has authored 91 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 31 papers in Condensed Matter Physics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Gwoziecki's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and GaN-based semiconductor devices and materials (31 papers). R. Gwoziecki is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and GaN-based semiconductor devices and materials (31 papers). R. Gwoziecki collaborates with scholars based in France, Italy and Switzerland. R. Gwoziecki's co-authors include R. Coppard, G. Ghibaudo, T. Skotnicki, Isabelle Chartier, M. Benwadih, Christophe Serbutoviez, F. Balestra, Stéphane Altazin, G. Reimbold and C. Gallon and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Gwoziecki

85 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Gwoziecki France 22 1.4k 346 290 152 149 91 1.5k
Abu Riduan Md Foisal Australia 17 709 0.5× 552 1.6× 112 0.4× 210 1.4× 42 0.3× 41 983
Andrew Ritenour United States 16 1.0k 0.7× 340 1.0× 87 0.3× 265 1.7× 49 0.3× 34 1.2k
Yiyao Peng China 13 579 0.4× 898 2.6× 290 1.0× 440 2.9× 65 0.4× 19 1.3k
Anis Daami France 13 516 0.4× 242 0.7× 108 0.4× 187 1.2× 293 2.0× 33 718
Andrea Cester Italy 20 1.4k 1.0× 97 0.3× 162 0.6× 245 1.6× 139 0.9× 153 1.5k
Tae Woong Kim South Korea 16 858 0.6× 290 0.8× 276 1.0× 517 3.4× 50 0.3× 45 1.1k
Mi‐Jin Jin South Korea 13 440 0.3× 406 1.2× 236 0.8× 418 2.8× 73 0.5× 32 862
Jinzong Kou China 11 437 0.3× 496 1.4× 219 0.8× 507 3.3× 96 0.6× 17 908
Jinjoo Park South Korea 20 1.2k 0.9× 183 0.5× 249 0.9× 616 4.1× 110 0.7× 96 1.4k
Konstantinos Rogdakis Greece 14 554 0.4× 181 0.5× 153 0.5× 353 2.3× 46 0.3× 49 787

Countries citing papers authored by R. Gwoziecki

Since Specialization
Citations

This map shows the geographic impact of R. Gwoziecki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Gwoziecki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Gwoziecki more than expected).

Fields of papers citing papers by R. Gwoziecki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Gwoziecki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Gwoziecki. The network helps show where R. Gwoziecki may publish in the future.

Co-authorship network of co-authors of R. Gwoziecki

This figure shows the co-authorship network connecting the top 25 collaborators of R. Gwoziecki. A scholar is included among the top collaborators of R. Gwoziecki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Gwoziecki. R. Gwoziecki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gwoziecki, R., et al.. (2025). Optimized semi-physical EKV model for simulation of SiC MOSFETs. Microelectronics Reliability. 171. 115780–115780.
2.
Zhang, Meiling, et al.. (2023). Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN. Microelectronic Engineering. 277. 112020–112020. 8 indexed citations
3.
Gwoziecki, R., et al.. (2023). Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. SPIRE - Sciences Po Institutional REpository. 1–6. 1 indexed citations
4.
Charles, Matthew, et al.. (2023). Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG). Solid-State Electronics. 201. 108594–108594. 5 indexed citations
5.
Laviéville, Romain, et al.. (2023). Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). SPIRE - Sciences Po Institutional REpository. 1–8. 5 indexed citations
6.
Raynaud, Christophe, Julien Buckley, Matthew Charles, et al.. (2023). Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes. Energies. 16(2). 599–599.
7.
Bah, Micka, et al.. (2023). Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN. ACS Applied Materials & Interfaces. 15(6). 8723–8729. 9 indexed citations
8.
Jaud, M.-A., et al.. (2022). A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures. Solid-State Electronics. 194. 108322–108322. 3 indexed citations
9.
Gerrer, Louis, X. Garros, J. Cluzel, et al.. (2021). Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT. IEEE Transactions on Electron Devices. 68(4). 2017–2024. 11 indexed citations
10.
Nolasco, J. C., M. Estrada, Yong Xu, et al.. (2012). Study of the interface area effect on the density of states in PTAA-Cytop® OTFTs. 1–3.
11.
Xu, Yong, Takeo Minari, Kazuhito Tsukagoshi, et al.. (2011). Modeling of static electrical properties in organic field-effect transistors. Journal of Applied Physics. 110(1). 24 indexed citations
12.
Daami, Anis, M. Benwadih, S. Jacob, et al.. (2011). Fully printed organic CMOS technology on plastic substrates for digital and analog applications. 37 indexed citations
13.
14.
Pretet, J., Takuma Matsumoto, T. Poiroux, et al.. (2002). New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides. 515–518. 55 indexed citations
15.
Gwoziecki, R., M. Jurczak, T. Skotnicki, J.L. Regolini, & M. Paoli. (1999). Suitability of Elevated Source/Drain for Deep Submicron CMOS. European Solid-State Device Research Conference. 1. 384–387. 5 indexed citations
16.
Gwoziecki, R. & T. Skotnicki. (1999). Smart pockets-total suppression of roll-off and roll-up [MOSFET doping]. 91–92. 14 indexed citations
17.
Gwoziecki, R., T. Skotnicki, Pierre Bouillon, & Paulo Gentil. (1999). Optimization of V/sub th/ roll-off in MOSFET's with advanced channel architecture-retrograde doping and pockets. IEEE Transactions on Electron Devices. 46(7). 1551–1561. 31 indexed citations
18.
Jurczak, M., E. Josse, R. Gwoziecki, M. Paoli, & T. Skotnicki. (1998). Investigation on the Suitability of Vertical MOSFET's for High Speed (RF) CMOS Applications. European Solid-State Device Research Conference. 172–175. 9 indexed citations
19.
Gwoziecki, R., T. Skotnicki, Pierre Bouillon, M. Haond, & W. De Coster. (1998). Improved understanding and optimization of 0.18um CMOS technology with retrograde channel and pockets. European Solid-State Device Research Conference. 352–355. 2 indexed citations
20.
Gwoziecki, R., T. Skotnicki, Pierre Bouillon, & A. Poncet. (1997). Junctions design guidelines for 0.18um CMOS. European Solid-State Device Research Conference. 388–391. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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