G. Ghibaudo
About
In The Last Decade
G. Ghibaudo
716 papers receiving 11.3k citations
Hit Papers
Peers
Comparison fields: 5 of 77
- Electrical and Electronic Engineering 11.3k
- Materials Chemistry 1.7k
- Biomedical Engineering 1.5k
- Atomic and Molecular Physics, and Optics 1.1k
- Condensed Matter Physics 396
Countries citing papers authored by G. Ghibaudo
This map shows the geographic impact of G. Ghibaudo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Ghibaudo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Ghibaudo more than expected).
Fields of papers citing papers by G. Ghibaudo
This network shows the impact of papers produced by G. Ghibaudo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Ghibaudo. The network helps show where G. Ghibaudo may publish in the future.
Co-authorship network of co-authors of G. Ghibaudo
This figure shows the co-authorship network connecting the top 25 collaborators of G. Ghibaudo. A scholar is included among the top collaborators of G. Ghibaudo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Ghibaudo. G. Ghibaudo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 3 | |
| 2 | 6 | |
| 3 | 11 | |
| 4 | 19 | |
| 5 | 13 | |
| 6 | 11 | |
| 7 | 16 | |
| 8 | 53 | |
| 9 | 18 | |
| 10 | 5 | |
| 11 | Impact of constant current stressing procedure on Stress Induced Leakage current generation in thin oxides | 0 |
| 12 | New Lifetime Prediction Method Based on the Control of the Secondary Impact Ionization with the Substrate Bias | 4 |
| 13 | Data Retention Time-to-Failure of Non Volatile Memories | 4 |
| 14 | 7 | |
| 15 | Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides During Fowler-Nordheim Injection | 4 |
| 16 | Hot-Carrier Effects in Single- and Double-Gate Thin-Film SOI MOSFETs | 1 |
| 17 | New Drain Current Transient Technique for Measuring the Slow Oxide Trap Density in MOS Transistors | 1 |
| 18 | On the Charge Build-Up Mechanisms in Very Thin Insulator Layers | 7 |
| 19 | Low Frequency Fluctuations in Scaled Down Silicon CMOS Devices Status and Trends | 21 |
| 20 | Low-Frequency Noise Sources in Polysilicon Emiter Bipolar Transistors: Influence of Hot-Electron-Induced Degradation and Post-Stress Recovery | 2 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.