L. Brévard

1.3k citations

38 papers · 405 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing
Biomedical Engineering
- Nanowire Synthesis and Applications

Papers in ⓘ

Electrical and Electronic Engineering 38
- Semiconductor materials and devices 36
- Advancements in Semiconductor Devices and Circuit Design 35
- Integrated Circuits and Semiconductor Failure Analysis 15
- Ferroelectric and Negative Capacitance Devices 9
- Silicon Carbide Semiconductor Technologies 6
Biomedical Engineering 4
- Nanowire Synthesis and Applications 4

Co-authors: S. Deleonibus (18 shared papers)O. Faynot (12 shared papers)O. Weber (18 shared papers)L. Tosti (11 shared papers)F. Andrieu (12 shared papers)F. Bœuf (3 shared papers)C. Fenouillet-Béranger (8 shared papers)F. Andrieu (13 shared papers)
Journals: Solid-State Electronics (4 papers)IEEE Electron Device Letters (1 paper)Applied Surface Science (1 paper)IEEE Transactions on Electron Devices (1 paper)Nanotechnology (1 paper)
Partner nations: France Switzerland Japan

In The Last Decade

L. Brévard

37 papers receiving 394 citations

Peers

Countries citing papers authored by L. Brévard

Since Specialization

Citations

This map shows the geographic impact of L. Brévard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Brévard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Brévard more than expected).

Fields of papers citing papers by L. Brévard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Brévard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Brévard. The network helps show where L. Brévard may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Brévard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Brévard Line = papers co-authored together L. Brévard links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding O. Weber, O. Faynot, F. Andrieu, C. Buj-Dufournet, F. Allain, P. Scheiblin, J. Foucher, Nicolas Daval, D. Lafond, L. Tosti, L. Brévard, O. Rozeau, C. Fenouillet-Béranger, M. Marin, F. Bœuf, D. Delprat, K.K. Bourdelle, Bich-Yen Nguyen, S. Deleonibus	2008	110
2	Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs F. Andrieu, T. Ernst, F. Lime, F. Rochette, K. Romanjek, Sylvain Barraud, C. Ravit, F. Bœuf, M. Jurczak, M. Cassé, O. Weber, L. Brévard, G. Reimbold, G. Ghibaudo, S. Deleonibus	2005	37
3	Lateral coupling and immunity to substrate effect in ΩFET devices Solid-State Electronics ·R. Ritzenthaler, S. Cristoloveanu, O. Faynot, C. Jahan, A. Kuriyama, L. Brévard, S. Deleonibus	2006	24
4	55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS O. Weber, F. Ducroquet, T. Ernst, F. Andrieu, J.-F. Damlencourt, Jean‐Michel Hartmann, B. Guillaumot, A.-M. Papon, H. Dansas, L. Brévard, A. Toffoli, P. Besson, F. Martín, Y. Morand, S. Deleonibus	2004	23
5	Drain current variability and MOSFET parameters correlations in planar FDSOI technology J. Mazurier, O. Weber, F. Andrieu, F. Allain, L. Tosti, L. Brévard, O. Rozeau, M.-A. Jaud, P. Perreau, C. Fenouillet-Béranger, Fareen Adeni Khaja, B. Colombeau, G. De Cock, G. Ghibaudo, Marie‐Pierre Belleville, O. Faynot, T. Poiroux	2011	21
6	ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm C. Jahan, O. Faynot, M. Cassé, R. Ritzenthaler, L. Brévard, L. Tosti, X. Garros, C. Vizioz, F. Allain, Anne‐Marie Papon, H. Dansas, F. Martín, M. Vinet, B. Guillaumot, A. Toffoli, B. Giffard, S. Deleonibus	2005	18
7	First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts Veeresh Deshpande, H. Hahn, Eileen O’Connor, Yannick Baumgartner, M. Sousa, Daniele Caimi, H. Boutry, J. Widiez, L. Brévard, C. Le Royer, M. Vinet, J. Fompeyrine, Lukas Czornomaz	2017	17
8	SiGe channel p-MOSFETs scaling-down F. Andrieu, T. Ernst, K. Romanjek, O. Weber, Charles Renard, Jean‐Michel Hartmann, A. Toffoli, A.-M. Papon, R. Truche, P. Holliger, L. Brévard, G. Ghibaudo, S. Deleonibus	2004	12
9	Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster C. Gallon, (unknown), A. Vandooren, F. Bœuf, (unknown), F. Payet, (unknown), Vincent Fiori, F. Salvetti, N. Loubet, C. Charbuillet, (unknown), F. Allain, (unknown), Ian Cayrefourcq, B. Ghyselen, C. Mazuré, D. Delille, F. Judong, (unknown), M. Hopstaken, (unknown), P. Rivallin, L. Brévard, E. Monroy, S. Cristoloveanu, T. Skotnicki	2006	12
10	Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS With Interlayer Contacts IEEE Transactions on Electron Devices ·Veeresh Deshpande, H. Hahn, Eileen O’Connor, Yannick Baumgartner, Daniele Caimi, M. Sousa, H. Boutry, J. Widiez, L. Brévard, C. Le Royer, M. Vinet, J. Fompeyrine, Lukas Czornomaz	2017	12
11	Planar FDSOI technology for sub 22nm nodes O. Faynot, F. Andrieu, C. Fenouillet-Béranger, O. Weber, P. Perreau, L. Tosti, L. Brévard, O. Rozeau, P. Scheiblin, Olivier Thomas, T. Poiroux	2010	11
12	Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET Nanotechnology ·Geunsoo Yang, Donghyun Kim, Ji‐Woon Yang, Sylvain Barraud, L. Brévard, G. Ghibaudo, Jae Woo Lee	2020	10
13	Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon–Germanium Source/Drain IEEE Electron Device Letters ·Sophie Baudot, F. Andrieu, O. Weber, P. Perreau, Jean‐François Damlencourt, S. Barnola, T. Salvetat, L. Tosti, L. Brévard, D. Lafond, J. Eymery, Olivier Faynot	2010	10
14	First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates HAL (Le Centre pour la Communication Scientifique Directe) ·Jean-Paul Mazellier, J. Widiez, F. Andrieu, Mathieu Lions, S. Saada, Masataka Hasegawa, Kazuo Tsugawa, L. Brévard, J. Dechamp, Marc Rabarot, V. Delaye, S. Cristoloveanu, L. Clavelier, S. Deleonibus, P. Bergonzo, O. Faynot	2009	10
15	Double SiGe:C diffusion barrier channel 40mn CMOS with improved short-channel performances F. Ducroquet, T. Ernst, Jean‐Michel Hartmann, O. Weber, F. Andrieu, P. Holliger, F. Laugier, P. Rivallin, G. Guégan, D. Lafond, C. Laviron, V. Carron, L. Brévard, C. Tabone, D. Bouchu, A. Toffoli, J. Cluzel, S. Deleonibus	2005	10
16	Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices J.P. Mazellier, F. Andrieu, O. Faynot, L. Brévard, C. Buj, S. Cristoloveanu, Y. Le Tiec, S. Deleonibus	2008	9
17	Dual Strained Channel co-integration into CMOS, RO and SRAM cells on FDSOI down to 17nm gate length Louis Hutin, C. Le Royer, F. Andrieu, O. Weber, M. Cassé, Jean‐Michel Hartmann, David Cooper, Armand Béché, L. Brévard, Laurent Brunet, J. Cluzel, P. Batude, M. Vinet, O. Faynot	2010	8
18	A systematic investigation of work function in advanced metal gate–HfO2–SiO2 structures with bevel oxide Solid-State Electronics ·A. Kuriyama, Jérôme Mitard, Olivier Faynot, L. Brévard, Laurence Clerc, Amélie Tozzo, V. Vidal, S. Deleonibus, Hiroshi Iwai, S. Cristoloveanu	2007	7
19	Mobility behavior in narrow Ω-gateFETs devices R. Ritzenthaler, C. Dupré, Xavier Mescot, O. Faynot, T. Ernst, J.-Ch. Barbé, C. Jahan, L. Brévard, F. Andrieu, S. Deleonibus, S. Cristoloveanu	2006	4
20	Influence of gate width on 50 nm gate length Si/sub 0.7/Ge/sub 0.3/ channel PMOSFETs Martin von Haartman, A.-C. Lindgren, Per‐Erik Hellström, Mikael Östling, T. Ernst, L. Brévard, S. Deleonibus	2004	4

About L. Brévard

L. Brévard is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Materials Chemistry, having authored 38 papers that have together received 405 indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Silicon Carbide Semiconductor Technologies (6 papers), Nanowire Synthesis and Applications (4 papers), Semiconductor Quantum Structures and Devices (1 paper) and Quantum and electron transport phenomena (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (400 citations), Biomedical Engineering (55 citations), Atomic and Molecular Physics, and Optics (24 citations), Hardware and Architecture (5 citations) and Structural Biology (1 citation). L. Brévard has collaborated with scholars based in France, Switzerland and Japan. Frequent co-authors include S. Deleonibus, O. Faynot, O. Weber, L. Tosti, F. Andrieu, F. Bœuf, C. Fenouillet-Béranger, F. Andrieu, F. Allain and O. Rozeau. Their work appears in journals such as Solid-State Electronics, IEEE Electron Device Letters, Applied Surface Science, IEEE Transactions on Electron Devices and Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact