M. Mouis

1.6k total citations
81 papers, 1.0k citations indexed

About

M. Mouis is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Mouis has authored 81 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 21 papers in Biomedical Engineering and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Mouis's work include Advancements in Semiconductor Devices and Circuit Design (68 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (22 papers). M. Mouis is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (68 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (22 papers). M. Mouis collaborates with scholars based in France, United Kingdom and United States. M. Mouis's co-authors include G. Ghibaudo, Gustavo Ardila, L. Montès, Ronan Hinchet, Sylvain Barraud, M. Cassé, Ya Yang, Sangmin Lee, Zhong Lin Wang and Zong‐Hong Lin and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Mouis

76 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Mouis France 17 853 368 147 146 90 81 1.0k
L. Dellmann Switzerland 14 798 0.9× 221 0.6× 155 1.1× 191 1.3× 71 0.8× 31 903
Guoxuan Qin United States 14 545 0.6× 483 1.3× 144 1.0× 152 1.0× 49 0.5× 45 759
Ozan Aktaş United Kingdom 10 296 0.3× 229 0.6× 135 0.9× 93 0.6× 78 0.9× 26 503
X. Boddaert France 10 324 0.4× 159 0.4× 142 1.0× 74 0.5× 65 0.7× 26 462
Arpys Arevalo Saudi Arabia 11 238 0.3× 368 1.0× 92 0.6× 140 1.0× 65 0.7× 24 513
Lisong Zhou United States 7 884 1.0× 328 0.9× 58 0.4× 174 1.2× 246 2.7× 12 1.0k
Daniel K. Sparacin United States 8 668 0.8× 384 1.0× 139 0.9× 285 2.0× 170 1.9× 12 850
Pushpapraj Singh India 13 463 0.5× 308 0.8× 151 1.0× 101 0.7× 37 0.4× 71 584
Pinggang Peng China 11 247 0.3× 317 0.9× 64 0.4× 357 2.4× 79 0.9× 15 705
Devin K. Brown United States 9 233 0.3× 255 0.7× 82 0.6× 71 0.5× 36 0.4× 29 423

Countries citing papers authored by M. Mouis

Since Specialization
Citations

This map shows the geographic impact of M. Mouis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Mouis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Mouis more than expected).

Fields of papers citing papers by M. Mouis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Mouis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Mouis. The network helps show where M. Mouis may publish in the future.

Co-authorship network of co-authors of M. Mouis

This figure shows the co-authorship network connecting the top 25 collaborators of M. Mouis. A scholar is included among the top collaborators of M. Mouis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Mouis. M. Mouis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fellahi, Zine El Abidine, et al.. (2025). Key technological elements for efficient integration of ZnO nanonets into performant field-effect transistors. SHILAP Revista de lepidopterología. 1(4).
2.
Nguyễn, Việt Hương, Tony Maindron, David Muñoz‐Rojas, et al.. (2019). Al 2 O 3 , Al doped ZnO and SnO 2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices. Nanotechnology. 30(38). 385202–385202. 9 indexed citations
3.
Tao, Ran, Gustavo Ardila, L. Montès, & M. Mouis. (2014). Modeling of semiconducting piezoelectric nanowires for mechanical energy harvesting and mechanical sensing. Nano Energy. 14. 62–76. 27 indexed citations
4.
Jeon, Dae‐Young, et al.. (2013). A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors. Solid-State Electronics. 81. 113–118. 11 indexed citations
5.
Pala, Marco, et al.. (2009). Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs. IEEE Transactions on Electron Devices. 56(10). 2186–2192. 37 indexed citations
6.
Boutchacha, T., et al.. (2009). Static and low frequency noise characterization of FinFET devices. 39–42. 2 indexed citations
7.
Cassé, M., Neïla Bhouri, F. Andrieu, et al.. (2008). Mobility of strained and unstrained short channel FD-SOI MOSFETs: New insight by magnetoresistance. 170–171. 4 indexed citations
8.
Huet, Karim, Jérôme Saint-Martin, Arnaud Bournel, et al.. (2007). Monte Carlo study of apparent mobility reduction in nano-MOSFETs. 382–385. 29 indexed citations
9.
Mouis, M., G. Ghibaudo, S. Cristoloveanu, et al.. (2007). Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique. Solid-State Electronics. 51(11-12). 1494–1499. 12 indexed citations
10.
Cassé, M., M. Mouis, G. Reimbold, et al.. (2007). Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs. Solid-State Electronics. 51(11-12). 1458–1465. 14 indexed citations
11.
Mouis, M., G. Ghibaudo, S. Cristoloveanu, et al.. (2006). Experimental Evidence of Mobility Enhancement in Short-Channel Ultra-thin Body Double-Gate MOSFETs. 50. 367–370. 2 indexed citations
12.
13.
Chantre, A., M. Marty, J.L. Regolini, et al.. (2002). A high performance low complexity SiGe HBT for BiCMOS integration. 93–96. 12 indexed citations
14.
Chantre, A., M. Marty, J.L. Regolini, et al.. (1998). A highly manufacturable 0.35um SiGe HBT technology with 70GHz fmax. European Solid-State Device Research Conference. 448–451. 1 indexed citations
15.
Assous, M., et al.. (1998). Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1740–1744. 5 indexed citations
16.
Vendrame, L., et al.. (1996). Optimisation of a Link Base Implant for Reducing the Access Base Resistance of Single-Poly Quasi Self-Aligned Bipolar Transistors. European Solid-State Device Research Conference. 803–806. 1 indexed citations
17.
Mouis, M., et al.. (1993). Modelling of Anomalous Boron Diffusion in Si/Si 1-x Ge x HBTs. European Solid-State Device Research Conference. 335–338. 1 indexed citations
18.
Mouis, M., et al.. (1992). A silicon vertical JFET compatible with standard 0.7 μm CMOS technology. Microelectronic Engineering. 19(1-4). 83–86. 1 indexed citations
19.
Nouailhat, A., et al.. (1992). Performance evaluation of CMOS compatible bipolar transistors and vertical junction FETs for advanced VLSI technology. Electronics Letters. 28(23). 2195–2196. 1 indexed citations
20.
Mouis, M., Philippe Dollfus, & R. Castagné. (1989). Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré. Revue de Physique Appliquée. 24(2). 183–188. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by L. Dellmann Breakdown of academic impact, for papers by Guoxuan Qin Breakdown of academic impact, for papers by Ozan Aktaş Breakdown of academic impact, for papers by X. Boddaert Breakdown of academic impact, for papers by Arpys Arevalo Breakdown of academic impact, for papers by Lisong Zhou Breakdown of academic impact, for papers by Daniel K. Sparacin Breakdown of academic impact, for papers by Pushpapraj Singh Breakdown of academic impact, for papers by Pinggang Peng Breakdown of academic impact, for papers by Devin K. Brown
Rankless by CCL
2026