P. Scheer

789 total citations
43 papers, 390 citations indexed

About

P. Scheer is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Biomedical Engineering. According to data from OpenAlex, P. Scheer has authored 43 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 4 papers in Hardware and Architecture and 3 papers in Biomedical Engineering. Recurrent topics in P. Scheer's work include Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (27 papers) and Radio Frequency Integrated Circuit Design (10 papers). P. Scheer is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (27 papers) and Radio Frequency Integrated Circuit Design (10 papers). P. Scheer collaborates with scholars based in France, Switzerland and Germany. P. Scheer's co-authors include B. Jaskorzyńska, Johan Nilsson, A. Juge, T. Poiroux, D. Gloria, S. Boret, J. C. Barbé, O. Rozeau, M. Minondo and M. Vinet and has published in prestigious journals such as IEEE Access, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

P. Scheer

33 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Scheer France 11 374 53 35 23 22 43 390
Alexander Tsibizov Switzerland 10 347 0.9× 46 0.9× 10 0.3× 20 0.9× 31 1.4× 22 379
L.C. Parrillo United States 10 372 1.0× 70 1.3× 18 0.5× 10 0.4× 38 1.7× 25 385
M. Horiuchi Japan 10 350 0.9× 32 0.6× 26 0.7× 11 0.5× 36 1.6× 30 374
G. Cusmai Italy 10 328 0.9× 95 1.8× 70 2.0× 9 0.4× 29 1.3× 22 338
A. Juge France 11 458 1.2× 27 0.5× 35 1.0× 2 0.1× 13 0.6× 47 466
Jan-Erik Mueller Germany 10 335 0.9× 37 0.7× 32 0.9× 2 0.1× 24 1.1× 34 348
Nicolas Daval France 11 429 1.1× 73 1.4× 90 2.6× 3 0.1× 30 1.4× 49 441
Yohann Franz United Kingdom 10 308 0.8× 126 2.4× 32 0.9× 14 0.6× 45 2.0× 20 330
C. Ortolland Belgium 11 380 1.0× 61 1.2× 55 1.6× 2 0.1× 21 1.0× 37 392
K. Himeno Japan 12 404 1.1× 130 2.5× 25 0.7× 12 0.5× 9 0.4× 39 423

Countries citing papers authored by P. Scheer

Since Specialization
Citations

This map shows the geographic impact of P. Scheer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Scheer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Scheer more than expected).

Fields of papers citing papers by P. Scheer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Scheer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Scheer. The network helps show where P. Scheer may publish in the future.

Co-authorship network of co-authors of P. Scheer

This figure shows the co-authorship network connecting the top 25 collaborators of P. Scheer. A scholar is included among the top collaborators of P. Scheer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Scheer. P. Scheer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Scheer, P., Philippe Cathelin, Jean‐Michel Fournier, et al.. (2023). Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies. SPIRE - Sciences Po Institutional REpository. 1–5. 2 indexed citations
2.
Scheer, P., et al.. (2023). Body resistance model for Partially Depleted SOI device: charge-based approach, extraction and Verilog-A implementation. SPIRE - Sciences Po Institutional REpository. 129–132.
3.
Frégonèse, Sébastien, et al.. (2023). Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz. SPIRE - Sciences Po Institutional REpository. 1–5.
4.
Scheer, P., Carlos Galup‐Montoro, Manuel J. Barragán, et al.. (2022). Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge. IEEE Access. 10. 86270–86285. 11 indexed citations
5.
Frégonèse, Sébastien, B. Heinemann, P. Scheer, et al.. (2020). Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data. IEEE Electron Device Letters. 42(1). 14–17. 5 indexed citations
6.
Sallèse, Jean-Michel, et al.. (2018). Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET. IEEE Transactions on Electron Devices. 66(1). 300–307. 2 indexed citations
7.
Poiroux, T., et al.. (2018). Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability. HAL (Le Centre pour la Communication Scientifique Directe). 17.1.1–17.1.4. 3 indexed citations
8.
Rideau, D., F. Monsieur, P. Scheer, et al.. (2017). Experimental ${g}_{m}/{I}_{{D}}$ Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET. IEEE Transactions on Electron Devices. 65(1). 11–18. 9 indexed citations
9.
Planes, N., et al.. (2016). 28FDSOI technology for low-voltage, analog and RF applications. 10–13. 6 indexed citations
10.
Poiroux, T., O. Rozeau, P. Scheer, et al.. (2015). Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model. IEEE Transactions on Electron Devices. 62(9). 2751–2759. 35 indexed citations
11.
Poiroux, T., P. Scheer, A. Juge, & M. Vinet. (2015). Multiscale statistically correlated variability: A unified model for computer-aided design. IEEE Transactions on Electron Devices. 62(11). 3605–3612. 3 indexed citations
12.
Danneville, F., Laurent Poulain, Sylvie Lépilliet, et al.. (2014). RF and broadband noise investigation in High‐k/Metal Gate 28‐nm CMOS bulk transistor. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 27(5-6). 736–747. 11 indexed citations
13.
Poiroux, T., O. Rozeau, S. Martinie, et al.. (2013). UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs. 12.4.1–12.4.4. 18 indexed citations
14.
Scheer, P., et al.. (2012). Revisited RF Compact Model of Gate Resistance Suitable for High- $K$/Metal Gate Technology. IEEE Transactions on Electron Devices. 60(1). 13–19. 12 indexed citations
15.
Cacho, F., P. Scheer, S. Boret, et al.. (2011). Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design. 55. 1–4. 4 indexed citations
16.
Bertrand, G., et al.. (2011). Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET. IEEE Transactions on Electron Devices. 58(11). 3793–3800.
17.
Fournier, D., D. Ducatteau, P. Scheer, et al.. (2009). Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with ‘ribbon’ gate and source contacts layouts. HAL (Le Centre pour la Communication Scientifique Directe). 116–119. 1 indexed citations
18.
19.
Havens, R.J., R. de Kort, A.J. Scholten, et al.. (2005). Record RF performance of standard 90 nm CMOS technology. University of Twente Research Information. 441–444. 32 indexed citations
20.
Roy, D., et al.. (2004). Ultra thin gate oxide characterization. The European Physical Journal Applied Physics. 27(1-3). 21–27.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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