M. Popovici

3.9k total citations
119 papers, 2.8k citations indexed

About

M. Popovici is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Popovici has authored 119 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Electrical and Electronic Engineering, 76 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Popovici's work include Semiconductor materials and devices (83 papers), Ferroelectric and Negative Capacitance Devices (72 papers) and Advanced Memory and Neural Computing (34 papers). M. Popovici is often cited by papers focused on Semiconductor materials and devices (83 papers), Ferroelectric and Negative Capacitance Devices (72 papers) and Advanced Memory and Neural Computing (34 papers). M. Popovici collaborates with scholars based in Belgium, United States and Romania. M. Popovici's co-authors include Christoph Adelmann, Tony Schenk, Uwe Schroeder, Thomas Mikolajick, Jan Van Houdt, Seong Keun Kim, Sven Van Elshocht, Luca Piazza, G. Groeseneken and Karine Florent and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

M. Popovici

110 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Popovici Belgium 28 2.3k 1.7k 318 271 189 119 2.8k
Zhengwei Zhang China 29 1.5k 0.6× 2.5k 1.5× 379 1.2× 292 1.1× 324 1.7× 64 2.9k
Wujie Qiu China 23 1.3k 0.6× 1.7k 1.0× 307 1.0× 457 1.7× 226 1.2× 68 2.6k
Hemant Kumar India 21 1.0k 0.4× 1.4k 0.9× 257 0.8× 409 1.5× 147 0.8× 62 2.3k
Won Seok Yun South Korea 22 1.3k 0.5× 2.6k 1.5× 431 1.4× 231 0.9× 350 1.9× 59 3.1k
Ahmed Y. Alyamani Saudi Arabia 24 865 0.4× 1.0k 0.6× 409 1.3× 198 0.7× 368 1.9× 78 1.8k
Jiyang Fan China 23 1.4k 0.6× 2.1k 1.2× 285 0.9× 112 0.4× 164 0.9× 83 2.5k
Chunyao Niu China 22 807 0.4× 1.7k 1.0× 184 0.6× 553 2.0× 207 1.1× 81 2.1k
Mengkun Tian United States 25 1.3k 0.6× 1.6k 0.9× 280 0.9× 641 2.4× 94 0.5× 77 2.4k
N. Koteeswara Reddy India 29 1.8k 0.8× 2.0k 1.2× 239 0.8× 141 0.5× 356 1.9× 63 2.2k

Countries citing papers authored by M. Popovici

Since Specialization
Citations

This map shows the geographic impact of M. Popovici's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Popovici with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Popovici more than expected).

Fields of papers citing papers by M. Popovici

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Popovici. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Popovici. The network helps show where M. Popovici may publish in the future.

Co-authorship network of co-authors of M. Popovici

This figure shows the co-authorship network connecting the top 25 collaborators of M. Popovici. A scholar is included among the top collaborators of M. Popovici based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Popovici. M. Popovici is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ronchi, N., M. Popovici, Harold Dekkers, et al.. (2025). Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics. IEEE Journal of the Electron Devices Society. 13. 245–251.
2.
Kim, Hyuncheol, M. Popovici, Javier Herrero‐Martín, et al.. (2025). Soft X‐Ray Absorption Spectroscopy Investigation of HfO 2 and ZrO 2 Thin Films with Modulated Crystalline Phase by Varying Dopants (Al, Si, Gd) for Ferroelectric and High‐ k Dielectric Applications. physica status solidi (RRL) - Rapid Research Letters. 19(9).
3.
Parida, Pradyumna Kumar, Hyuncheol Kim, Olivier Richard, et al.. (2025). Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility. Applied Surface Science. 717. 164786–164786.
4.
5.
Ronchi, N., A. Walke, M. Popovici, et al.. (2024). A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs. IEEE Electron Device Letters. 45(8). 1453–1456. 2 indexed citations
6.
Ronchi, N., Kaustuv Banerjee, A. Walke, et al.. (2024). Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs. Lirias (KU Leuven). 661–664.
7.
Clima, Sergiu, et al.. (2023). Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor. Solid-State Electronics. 212. 108834–108834. 1 indexed citations
8.
O’Sullivan, B. J., et al.. (2022). Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4. Solid-State Electronics. 194. 108388–108388. 5 indexed citations
9.
Slotte, J., et al.. (2022). Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy. Journal of Applied Physics. 131(24). 1 indexed citations
10.
Celano, Umberto, Andrés Gómez, Sabine M. Neumayer, et al.. (2020). Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges. Nanomaterials. 10(8). 1576–1576. 17 indexed citations
11.
12.
Kim, Seong Keun & M. Popovici. (2018). Future of dynamic random-access memory as main memory. MRS Bulletin. 43(5). 334–339. 135 indexed citations
13.
14.
Florent, Karine, A. Subirats, Simone Lavizzari, et al.. (2018). Investigation of the endurance of FE-HfO<inf>2</inf> devices by means of TDDB studies. 6D.3–1. 27 indexed citations
15.
Florent, Karine, Simone Lavizzari, Luca Piazza, et al.. (2017). First demonstration of vertically stacked ferroelectric Al doped HfO<inf>2</inf> devices for NAND applications. T158–T159. 64 indexed citations
16.
Popovici, M., A. Redolfi, B. Kaczer, et al.. (2014). Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory. Applied Physics Letters. 104(8). 32 indexed citations
17.
Pawlak, Małgorzata, B. Kaczer, Minsoo Kim, et al.. (2011). Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential. Symposium on VLSI Technology. 168–169. 4 indexed citations
18.
Pawlak, Małgorzata, B. Kaczer, M. Popovici, et al.. (2011). Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors. Applied Physics Letters. 98(18). 24 indexed citations
19.
Delabie, Annelies, Matty Caymax, Jan Willem Maes, et al.. (2010). Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N[sub 2]/O[sub 2] Supply Ratio in Ozone Generation. Electrochemical and Solid-State Letters. 13(6). H176–H176. 15 indexed citations
20.
Popovici, M., Sven Van Elshocht, N. Menou, et al.. (2009). Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]. Journal of The Electrochemical Society. 157(1). G1–G1. 55 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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