P. Lehnen

1.3k total citations
41 papers, 985 citations indexed

About

P. Lehnen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Lehnen has authored 41 papers receiving a total of 985 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Lehnen's work include Semiconductor materials and devices (28 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). P. Lehnen is often cited by papers focused on Semiconductor materials and devices (28 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). P. Lehnen collaborates with scholars based in Germany, Belgium and Taiwan. P. Lehnen's co-authors include W. Kleemann, R. Pankrath, Th. Woike, J. Dec, Sven Van Elshocht, Stefan De Gendt, Christoph Adelmann, Thierry Conard, R. Blinc and Boštjan Zalar and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Lehnen

41 papers receiving 956 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Lehnen Germany 15 712 492 299 219 190 41 985
Б. Б. Кричевцов Russia 16 417 0.6× 498 1.0× 510 1.7× 204 0.9× 520 2.7× 91 1.1k
Yu. G. Goncharov Russia 13 378 0.5× 256 0.5× 251 0.8× 143 0.7× 194 1.0× 35 734
J. Johannsen Germany 19 862 1.2× 521 1.1× 119 0.4× 136 0.6× 757 4.0× 28 1.3k
Alexander von Hoegen United States 13 400 0.6× 380 0.8× 198 0.7× 146 0.7× 420 2.2× 21 827
S. C. Abbi India 16 538 0.8× 457 0.9× 84 0.3× 188 0.9× 331 1.7× 43 837
В. И. Зиненко Russia 12 456 0.6× 198 0.4× 272 0.9× 59 0.3× 121 0.6× 107 630
Huanchu Chen China 18 620 0.9× 680 1.4× 243 0.8× 249 1.1× 482 2.5× 125 1.0k
G. Grenet France 20 465 0.7× 638 1.3× 124 0.4× 168 0.8× 517 2.7× 76 1.0k
P. J. Lin‐Chung United States 20 412 0.6× 554 1.1× 166 0.6× 97 0.4× 789 4.2× 46 1.1k
Ajay Singh Germany 16 672 0.9× 421 0.9× 85 0.3× 79 0.4× 216 1.1× 34 928

Countries citing papers authored by P. Lehnen

Since Specialization
Citations

This map shows the geographic impact of P. Lehnen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Lehnen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Lehnen more than expected).

Fields of papers citing papers by P. Lehnen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Lehnen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Lehnen. The network helps show where P. Lehnen may publish in the future.

Co-authorship network of co-authors of P. Lehnen

This figure shows the co-authorship network connecting the top 25 collaborators of P. Lehnen. A scholar is included among the top collaborators of P. Lehnen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Lehnen. P. Lehnen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Elshocht, Sven Van, Christoph Adelmann, P. Lehnen, & Stefan De Gendt. (2009). Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions. Electrochemical and Solid-State Letters. 12(5). G17–G17. 10 indexed citations
2.
Adelmann, Christoph, Johan Meersschaut, Thierry Conard, et al.. (2009). Thermally stable high effective work function TaCN thin films for metal gate electrode applications. Journal of Applied Physics. 105(5). 11 indexed citations
3.
Elshocht, Sven Van, Christoph Adelmann, Thierry Conard, et al.. (2008). Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 26(4). 724–730. 34 indexed citations
4.
Adelmann, Christoph, P. Lehnen, Thierry Conard, et al.. (2008). Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications. MRS Proceedings. 1073. 1 indexed citations
5.
O’Connor, Robert, Vincent S. Chang, L. Pantisano, et al.. (2008). Anomalous positive-bias temperature instability of high-&#x03BA;/metal gate nMOSFET devices with Dy<inf>2</inf>O<inf>3</inf> capping. 671–672. 1 indexed citations
6.
Karim, Zia, P. Lehnen, T. E. Seidel, et al.. (2007). AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics. ECS Transactions. 11(4). 557–567. 4 indexed citations
7.
Adelmann, Christoph, P. Lehnen, Sven Van Elshocht, et al.. (2007). Growth of Dysprosium‐, Scandium‐, and Hafnium‐based Third Generation High‐κ Dielectrics by Atomic Vapor Deposition. Chemical Vapor Deposition. 13(10). 567–573. 24 indexed citations
8.
Schram, T., L. Pantisano, A. Stesmans, et al.. (2007). Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectronics Reliability. 47(4-5). 518–520. 3 indexed citations
9.
Elshocht, Sven Van, An Hardy, Stefan De Gendt, et al.. (2006). Alternative Gate Dielectric Materials. ECS Transactions. 3(3). 479–497. 2 indexed citations
10.
Karim, Zia, Zhihong Zhang, Woong Park, et al.. (2006). Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics. ECS Transactions. 3(3). 363–374. 1 indexed citations
11.
Elshocht, Sven Van, P. Lehnen, A. Abrutis, et al.. (2006). Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors. Journal of The Electrochemical Society. 153(9). F219–F219. 18 indexed citations
12.
Chien, Chao-Hsin, et al.. (2005). Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment. Japanese Journal of Applied Physics. 44(11R). 7869–7869. 2 indexed citations
13.
Yang, Min, Jiann Shieh, Ching‐Chich Leu, et al.. (2005). Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD. Electrochemical and Solid-State Letters. 8(5). C74–C76. 5 indexed citations
14.
Schumacher, Markus, et al.. (2004). AVD® technology for deposition of next generation devices. Microelectronics Reliability. 45(5-6). 945–948. 13 indexed citations
15.
Chien, Chao‐Hsin, et al.. (2003). High-performance Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure for nondestructive readout memory. IEEE Electron Device Letters. 24(9). 553–555. 23 indexed citations
16.
Lehnen, P., W. Kleemann, Th. Woike, & R. Pankrath. (2001). Ferroelectric nanodomains in the uniaxial relaxor systemSr0.61−xBa0.39Nb2O6:Cex3+. Physical review. B, Condensed matter. 64(22). 115 indexed citations
17.
Lehnen, P., et al.. (2001). Ferroelectric domains in the uniaxial relaxor system SBN:Ce, Cr and Co. Ferroelectrics. 253(1). 11–19. 7 indexed citations
18.
Lehnen, P., W. Kleemann, Th. Woike, & R. Pankrath. (2000). Phase transitions in Sr 0.61 Ba 0.39 Nb 2 O 6 :Ce 3+ : II. Linear birefringence studies of spontaneous and precursor polarization. The European Physical Journal B. 14(4). 633–637. 17 indexed citations
19.
Lehnen, P., J. Dec, W. Kleemann, Th. Woike, & R. Pankrath. (2000). Relaxor properties of SBN:CE. Ferroelectrics. 240(1). 1547–1554. 13 indexed citations
20.
Kleemann, W., et al.. (1999). Phase transitions in doped quantum paraelectrics. Ferroelectrics. 229(1). 39–44. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Б. Б. Кричевцов Breakdown of academic impact, for papers by Yu. G. Goncharov Breakdown of academic impact, for papers by J. Johannsen Breakdown of academic impact, for papers by Alexander von Hoegen Breakdown of academic impact, for papers by S. C. Abbi Breakdown of academic impact, for papers by В. И. Зиненко Breakdown of academic impact, for papers by Huanchu Chen Breakdown of academic impact, for papers by G. Grenet Breakdown of academic impact, for papers by P. J. Lin‐Chung Breakdown of academic impact, for papers by Ajay Singh
Rankless by CCL
2026