A. Subirats

767 total citations
33 papers, 589 citations indexed

About

A. Subirats is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Hardware and Architecture. According to data from OpenAlex, A. Subirats has authored 33 papers receiving a total of 589 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 5 papers in Computer Networks and Communications and 2 papers in Hardware and Architecture. Recurrent topics in A. Subirats's work include Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). A. Subirats is often cited by papers focused on Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). A. Subirats collaborates with scholars based in Belgium, France and United States. A. Subirats's co-authors include B. Kaczer, D. Linten, Jan Van Houdt, A. Arreghini, J. Franco, G. Groeseneken, Luca Piazza, Karine Florent, Pieter Weckx and Geert Hellings and has published in prestigious journals such as IEEE Transactions on Electron Devices, Microelectronics Reliability and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

A. Subirats

31 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Subirats Belgium	13	576	164	45	15	15	33	589
Ling-Wu Yang Taiwan	13	470 0.8×	110 0.7×	138 3.1×	18 1.2×	49 3.3×	39	499
L. Breuil Belgium	15	640 1.1×	198 1.2×	115 2.6×	22 1.5×	17 1.1×	70	657
Sheng-Chih Lai Taiwan	13	437 0.8×	219 1.3×	98 2.2×	22 1.5×	50 3.3×	37	477
Srinivasa Banna United States	11	528 0.9×	107 0.7×	49 1.1×	21 1.4×	35 2.3×	28	546
Tatsuya Onuki Japan	9	342 0.6×	137 0.8×	9 0.2×	8 0.5×	30 2.0×	34	355
J. Ku Taiwan	10	304 0.5×	67 0.4×	57 1.3×	33 2.2×	24 1.6×	26	315
Pengpeng Ren China	14	431 0.7×	87 0.5×	12 0.3×	13 0.9×	17 1.1×	87	476
Efraim Aloni Israel	5	487 0.8×	146 0.9×	42 0.9×	22 1.5×	14 0.9×	7	494
Hoon Jeong South Korea	12	345 0.6×	143 0.9×	14 0.3×	19 1.3×	49 3.3×	24	370
Wandong Kim South Korea	9	205 0.4×	48 0.3×	92 2.0×	24 1.6×	25 1.7×	26	248

Countries citing papers authored by A. Subirats

Since Specialization

Citations

This map shows the geographic impact of A. Subirats's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Subirats with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Subirats more than expected).

Fields of papers citing papers by A. Subirats

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Subirats. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Subirats. The network helps show where A. Subirats may publish in the future.

Co-authorship network of co-authors of A. Subirats

This figure shows the co-authorship network connecting the top 25 collaborators of A. Subirats. A scholar is included among the top collaborators of A. Subirats based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Subirats. A. Subirats is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Subirats, A., Giovanni Ferrari, Uma Sharma, et al.. (2025). Modeling BTI Reliability in CMOS DRAM Periphery Device: A Review of BTI Analysis Tool (BAT). 1–6.

Breuil, L., Laura Nyns, Kaustuv Banerjee, et al.. (2019). Impact of SiON tunnel layer composition on 3D NAND cell performance. 1–4. 10 indexed citations

Higashi, Y., Karine Florent, A. Subirats, et al.. (2019). New Insights into the Imprint Effect in FE-HfO₂ and its Recovery. 1–7. 18 indexed citations

Hiblot, Gaspard, et al.. (2018). Electrical Characterization of BEOL Plasma-Induced Damage in Bulk FinFET Technology. IEEE Transactions on Device and Materials Reliability. 19(1). 84–89. 8 indexed citations

Florent, Karine, A. Subirats, Simone Lavizzari, et al.. (2018). Investigation of the endurance of FE-HfO<inf>2</inf> devices by means of TDDB studies. 6D.3–1. 27 indexed citations

Rzepa, G., J. Franco, Barry O’Sullivan, et al.. (2018). Comphy — A compact-physics framework for unified modeling of BTI. Microelectronics Reliability. 85. 49–65. 158 indexed citations

Garros, X., A. Subirats, G. Reimbold, et al.. (2018). A new method for quickly evaluating reversible and permanent components of the BTI degradation. HAL (Le Centre pour la Communication Scientifique Directe). P–RT.6. 2 indexed citations

Florent, Karine, A. Subirats, Simone Lavizzari, et al.. (2018). Investigation of the endurance of FE-HfO 2 devices by means of TDDB studies. 2018. 10 indexed citations

Florent, Karine, A. Subirats, Kaustuv Banerjee, et al.. (2018). Vertical Ferroelectric HfO<inf>2</inf> FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory. 2.5.1–2.5.4. 125 indexed citations

10.

Garros, X., Antoine Laurent, A. Subirats, et al.. (2017). Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectronics Reliability. 80. 100–108. 7 indexed citations

11.

Arimura, Hiroaki, Liesbeth Witters, Daire Cott, et al.. (2017). Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability. T196–T197. 14 indexed citations

12.

Rzepa, G., J. Franco, A. Subirats, et al.. (2017). Efficient physical defect model applied to PBTI in high-κ stacks. XT–11.1. 27 indexed citations

13.

Subirats, A., A. Arreghini, E. Capogreco, et al.. (2017). Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND. 21.2.1–21.2.4. 16 indexed citations

14.

Arreghini, A., Romain Delhougne, A. Subirats, et al.. (2017). First Demonstration of SiGe Channel in Macaroni Geometry for Future 3D NAND. 1–4. 8 indexed citations

15.

Simicic, Marko, A. Subirats, Pieter Weckx, et al.. (2016). Comparative experimental analysis of time-dependent variability using a transistor test array. Lirias (KU Leuven). XT–10. 8 indexed citations

16.

Capogreco, E., A. Subirats, J. G. Lisoni, et al.. (2016). Feasibility of In_{<italic>x</italic>}Ga_{1–<italic>x</italic>}As High Mobility Channel for 3-D NAND Memory. IEEE Transactions on Electron Devices. 64(1). 130–136. 11 indexed citations

17.

Capogreco, E., J. G. Lisoni, A. Arreghini, et al.. (2015). MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory. 3.1.1–3.1.4. 13 indexed citations

18.

Weckx, Pieter, B. Kaczer, J. Franco, et al.. (2015). Defect-centric perspective of combined BTI and RTN time-dependent variability. 21–28. 10 indexed citations

19.

Subirats, A., et al.. (2014). Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide. IEEE Transactions on Electron Devices. 62(2). 485–492. 6 indexed citations

20.

Brunet, Laurent, X. Garros, A. Bravaix, et al.. (2012). Impact of backside interface on Hot Carriers degradation of thin film FDSOI Nmosfets. 3B.2.1–3B.2.5. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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