Attilio Belmonte

3.0k total citations
94 papers, 1.7k citations indexed

About

Attilio Belmonte is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Attilio Belmonte has authored 94 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 93 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 9 papers in Cellular and Molecular Neuroscience. Recurrent topics in Attilio Belmonte's work include Advanced Memory and Neural Computing (68 papers), Semiconductor materials and devices (59 papers) and Ferroelectric and Negative Capacitance Devices (57 papers). Attilio Belmonte is often cited by papers focused on Advanced Memory and Neural Computing (68 papers), Semiconductor materials and devices (59 papers) and Ferroelectric and Negative Capacitance Devices (57 papers). Attilio Belmonte collaborates with scholars based in Belgium, South Korea and Japan. Attilio Belmonte's co-authors include M. Jurczak, Ludovic Goux, A. Fantini, Umberto Celano, Wilfried Vandervorst, R. Degraeve, L. Goux, Gouri Sankar Kar, Karl Opsomer and Christophe Detavernier and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Attilio Belmonte

82 papers receiving 1.7k citations

Peers

Attilio Belmonte
Ludovic Goux Belgium
Xianhu Liang China
Zongliang Huo China
Ximeng Guan United States
Daniele Garbin Belgium
Burt Fowler United States
Seungjae Jung South Korea
Euijun Cha South Korea
Umesh Chand Singapore
Kate J. Norris United States
Ludovic Goux Belgium
Attilio Belmonte
Citations per year, relative to Attilio Belmonte Attilio Belmonte (= 1×) peers Ludovic Goux

Countries citing papers authored by Attilio Belmonte

Since Specialization
Citations

This map shows the geographic impact of Attilio Belmonte's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Attilio Belmonte with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Attilio Belmonte more than expected).

Fields of papers citing papers by Attilio Belmonte

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Attilio Belmonte. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Attilio Belmonte. The network helps show where Attilio Belmonte may publish in the future.

Co-authorship network of co-authors of Attilio Belmonte

This figure shows the co-authorship network connecting the top 25 collaborators of Attilio Belmonte. A scholar is included among the top collaborators of Attilio Belmonte based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Attilio Belmonte. Attilio Belmonte is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Belmonte, Attilio & Gouri Sankar Kar. (2025). Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology. 2(4). 220–221. 1 indexed citations
2.
Garbin, Daniele, Sergiu Clima, R. Degraeve, et al.. (2025). Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory. IEEE Journal of the Electron Devices Society. 13. 362–365.
3.
Setten, Michiel J. van, Adrian Chasin, Daisuke Matsubayashi, et al.. (2025). In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI. ACS Applied Electronic Materials. 7(9). 4210–4219. 2 indexed citations
4.
Lin, Dennis, Subhali Subhechha, Adrian Chasin, et al.. (2025). The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs. IEEE Electron Device Letters. 46(5). 761–764.
5.
Kundu, Shreya, et al.. (2025). Atomic layer etching of InGaZnO thin films via plasma hydrocarbonation and oxygen radical reaction. Plasma Sources Science and Technology. 34(8). 85001–85001.
6.
Parida, Pradyumna Kumar, Hyuncheol Kim, Olivier Richard, et al.. (2025). Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility. Applied Surface Science. 717. 164786–164786.
7.
Garbin, Daniele, A. Fantini, R. Degraeve, et al.. (2024). Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density. physica status solidi (RRL) - Rapid Research Letters. 9 indexed citations
8.
Degraeve, R., Daniele Garbin, Sergiu Clima, et al.. (2024). Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. Lirias (KU Leuven). 7A.5–1. 6 indexed citations
9.
Zhao, Ying, Ben Kaczer, Nouredine Rassoul, et al.. (2024). Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. 1–6. 3 indexed citations
10.
Garbin, Daniele, Wouter Devulder, Sergiu Clima, et al.. (2024). Electrical Demonstration of Sn–S-Based OTS Materials From Theoretical Design for Sustainable Innovation. IEEE Transactions on Electron Devices. 71(9). 5339–5344. 2 indexed citations
11.
Kishore, R., Subhali Subhechha, Jiwon Lee, et al.. (2024). Novel High Density 3D Buffer Memory Enabled by IGZO Channel Charge Coupled Device. 1–4.
12.
Clima, Sergiu, Fabian Ducry, Daniele Garbin, et al.. (2024). Selector Only Memory: Exploring Atomic Mechanisms from First-Principles. 1–4. 3 indexed citations
13.
Subhechha, Subhali, Stefan Cosemans, Attilio Belmonte, et al.. (2023). Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays. Zenodo (CERN European Organization for Nuclear Research). 1–4. 5 indexed citations
14.
Dekkers, Harold, Nouredine Rassoul, Surajit Sutar, et al.. (2023). Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor. IEEE Transactions on Electron Devices. 71(1). 567–573. 21 indexed citations
15.
16.
Chai, Zheng, Wei Dong Zhang, J. F. Zhang, et al.. (2018). Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution. IEEE Transactions on Electron Devices. 65(3). 970–977. 9 indexed citations
17.
Belmonte, Attilio, A. Fantini, A. Redolfi, et al.. (2015). Excellent Roff/Ron ratio and short programming time in Cu/Al2O3‐based conductive‐bridging RAM under low‐current (10 μA) operation. physica status solidi (a). 213(2). 302–305. 12 indexed citations
18.
19.
Fantini, A., Ludovic Goux, R. Degraeve, et al.. (2013). Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study. 30–33. 11 indexed citations
20.
Pawlak, Małgorzata, B. Kaczer, Minsoo Kim, et al.. (2011). Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential. Symposium on VLSI Technology. 168–169. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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