J. Penaud

447 total citations
31 papers, 372 citations indexed

About

J. Penaud is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Penaud has authored 31 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in J. Penaud's work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor materials and interfaces (8 papers). J. Penaud is often cited by papers focused on Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor materials and interfaces (8 papers). J. Penaud collaborates with scholars based in Belgium, France and Netherlands. J. Penaud's co-authors include Clément Merckling, Marc Meuris, Matty Caymax, Marc Heyns, Guy Brammertz, Koen Martens, Sonja Sioncke, H. C. Lin, J. Dekoster and Michel Houssa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Penaud

31 papers receiving 362 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Penaud Belgium 10 354 157 136 57 24 31 372
Anja Dobrich Germany 11 319 0.9× 153 1.0× 143 1.1× 82 1.4× 25 1.0× 19 360
Yichen Mao China 12 338 1.0× 166 1.1× 163 1.2× 67 1.2× 7 0.3× 33 381
Yasuhiro Fukuzawa Japan 12 297 0.8× 308 2.0× 132 1.0× 36 0.6× 7 0.3× 20 374
Masato Osamura Japan 11 270 0.8× 278 1.8× 120 0.9× 35 0.6× 8 0.3× 17 344
Hazem K. Khanfar Palestinian Territory 10 272 0.8× 129 0.8× 239 1.8× 56 1.0× 7 0.3× 56 339
S. T. Chang Taiwan 10 445 1.3× 119 0.8× 186 1.4× 79 1.4× 13 0.5× 20 480
P.D. Ye United States 10 628 1.8× 186 1.2× 202 1.5× 116 2.0× 13 0.5× 19 674
T. Onai Japan 16 677 1.9× 134 0.9× 173 1.3× 106 1.9× 13 0.5× 52 714
Alex Demkov United States 7 260 0.7× 61 0.4× 209 1.5× 26 0.5× 11 0.5× 21 304
Agnieszka Paszuk Germany 11 228 0.6× 139 0.9× 83 0.6× 86 1.5× 33 1.4× 35 287

Countries citing papers authored by J. Penaud

Since Specialization
Citations

This map shows the geographic impact of J. Penaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Penaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Penaud more than expected).

Fields of papers citing papers by J. Penaud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Penaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Penaud. The network helps show where J. Penaud may publish in the future.

Co-authorship network of co-authors of J. Penaud

This figure shows the co-authorship network connecting the top 25 collaborators of J. Penaud. A scholar is included among the top collaborators of J. Penaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Penaud. J. Penaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Horzel, Jörg, Patrick Choulat, Emanuele Cornagliotti, et al.. (2012). Overview on Recent Improvement for Industrially Applicable PERL-Type Si Solar Cell Processing. EU PVSEC. 1602–1606. 2 indexed citations
2.
Penaud, J., et al.. (2012). Impact of surface preparation prior to Al<inf>2</inf>O<inf>3</inf> deposition for i-PERC cells. 17. 1083–1088. 1 indexed citations
3.
Bogdanowicz, Janusz, P. Mertens, Emanuele Cornagliotti, et al.. (2012). Non‐destructive characterization of saw damage in silicon photovoltaics substrates by means of photomodulated optical reflectance. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(10-11). 2116–2119. 1 indexed citations
4.
Rothschild, A., J. Penaud, P. Jaffrennou, et al.. (2012). Impact of Surface Preparation Prior to ALD-Al2O3 for PERC Type Solar Cell. EU PVSEC. 1974–1977. 3 indexed citations
5.
Jaffrennou, P., A. Urueña, J. Das, et al.. (2011). Laser Ablation of SiO2/SiNx and AlOx/SiNx Back Side Passivation Stacks for Advanced Cell Architectures. EU PVSEC. 2180–2183. 6 indexed citations
6.
Rothschild, A., J. Penaud, P. Jaffrennou, et al.. (2011). ALD-Al2O3 Passivation for Solar Cells: High Temperature Stability. EU PVSEC. 2273–2275. 1 indexed citations
7.
Jaffrennou, P., M. Moors, A. Urueña, et al.. (2011). Laser ablation of AlOx and AlOx/SiNx backside passivation layers for advanced cell architectures. 1074–1078. 4 indexed citations
8.
Horzel, Jörg, Andreas Lorenz, Emanuele Cornagliotti, et al.. (2011). Development of Rear Side Polishing Adapted to Advanced Solar Cell Concepts. EU PVSEC. 2210–2216. 14 indexed citations
9.
Bellenger, Florence, Brice De Jaeger, Clément Merckling, et al.. (2010). High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology. IEEE Electron Device Letters. 31(5). 402–404. 49 indexed citations
10.
Chang, Yen‐Chung, Clément Merckling, J. Penaud, et al.. (2010). Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing. Applied Physics Letters. 97(11). 64 indexed citations
11.
Merckling, Clément, Yen‐Chung Chang, Chun‐An Lu, et al.. (2010). H2S molecular beam passivation of Ge(001). Microelectronic Engineering. 88(4). 399–402. 8 indexed citations
12.
Longo, Pasquale, et al.. (2010). A TEM nanoanalytical investigation of Pd/Ge ohmic contacts for the miniaturization and optimization of n-InGaAs MOSFET devices. Journal of Physics Conference Series. 241. 12037–12037. 1 indexed citations
13.
Merckling, Clément, J. Penaud, David Kohen, et al.. (2009). Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS. Microelectronic Engineering. 86(7-9). 1592–1595. 14 indexed citations
14.
Heyns, Marc, Christoph Adelmann, Guy Brammertz, et al.. (2009). Ge and III/V devices for advanced CMOS. Document Server@UHasselt (UHasselt). 602. 83–86. 2 indexed citations
15.
Merckling, Clément, J. Penaud, Florence Bellenger, et al.. (2009). Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures. MRS Proceedings. 1155. 1 indexed citations
16.
Brammertz, Guy, H. C. Lin, Koen Martens, et al.. (2009). Electrical Properties of III-V/Oxide Interfaces. ECS Transactions. 19(5). 375–386. 54 indexed citations
17.
Heyns, Marc, Christoph Adelmann, Guy Brammertz, et al.. (2008). Alternative channel materials for MOS devices. Document Server@UHasselt (UHasselt). 1–2. 2 indexed citations
18.
Afanas’ev, V. V., A. Stesmans, Annelies Delabie, et al.. (2008). Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams. Materials Science in Semiconductor Processing. 11(5-6). 230–235. 6 indexed citations
19.
Bellenger, Florence, Clément Merckling, J. Penaud, et al.. (2008). Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition. ECS Transactions. 16(5). 411–422. 13 indexed citations
20.
Penaud, J., et al.. (2005). An optimal high contrast e-beam lithography process for the patterning of dense fin networks. Materials Science and Engineering C. 26(5-7). 893–897. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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