C. Hobbs

1.0k citations

46 papers · 826 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Materials Chemistry
- Electronic and Structural Properties of Oxides
- ZnO doping and properties

Papers in

Electrical and Electronic Engineering 46
- Semiconductor materials and devices 43
- Advancements in Semiconductor Devices and Circuit Design 26
- Integrated Circuits and Semiconductor Failure Analysis 16
- Ferroelectric and Negative Capacitance Devices 9
Materials Chemistry 12
- Electronic and Structural Properties of Oxides 8

Co-authors: R. I. Hegde Gregory N. Parsons Dongfang Niu Tonya M. Klein I. J. R. Baumvol W. Li William S. Epling D. M. Maher
Journals: Applied Physics Letters (4 papers)Journal of The Electrochemical Society (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Solid-State Electronics (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)
Partner nations: United States France Germany

In The Last Decade

C. Hobbs

45 papers receiving 777 citations

Peers

Countries citing papers authored by C. Hobbs

Since Specialization

Citations

This map shows the geographic impact of C. Hobbs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Hobbs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Hobbs more than expected).

Fields of papers citing papers by C. Hobbs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Hobbs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Hobbs. The network helps show where C. Hobbs may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Hobbs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Hobbs Line = papers co-authored together C. Hobbs links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Bias temperature instability investigation of double-gate FinFETs Chadwin D. Young, A. Neugroschel, Kausik Majumdar, Feifan Jin, K. Matthews, C. Hobbs	2014	3
2	Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs IEEE Transactions on Device and Materials Reliability ·S. Deora, G. Bersuker, W.Y. Loh, Dmitry Veksler, K. Matthews, Jeffrey Dooling, Natividad González Gómez, Richard J. Hill, Kye Hyun Kwon, Arzu Gümüş, C. Hobbs, P. D. Kirsch	2013	38
3	High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs Cruz Yépez, Katharine K. Sujata, Rowland Hill, Chan Kang, C. Hobbs, P. D. Kirsch, W. Maszara, Jesús A. del Alamo	2013	1
4	Optical Probing of FinFETs María Eugenia Pujalte Navarro, Chadwin D. Young, C. Hobbs, G. Bersuker, Abou-Elela Y.S., Jan Taylor	2013	4
5	Multi-technique study of defect generation in high-k gate stacks Dmitry Veksler, G. Bersuker, Himanshu Madan, Luca Vandelli, 中新, K. Matthews, Chadwin D. Young, Suman Datta, C. Hobbs, P. D. Kirsch	2012	6
6	PBTI improvement in gate last HfO<inf>2</inf> gate dielectric nMOSFET due to Zr incorporation S. Deora, G. Bersuker, Chadwin D. Young, 梶山美明, K. Matthews, Kah‐Wee Ang, Sun Zhao-xing, C. Hobbs, P. D. Kirsch, R. Jammy	2012	1
7	Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements Journal of Applied Physics ·Dmitry Veksler, 則雄柳澤, Abdullah Batu, 陽一蓑, Vadim Tokranov, Michail M. Yakimov, 전종관, Jimin Huang, N. Goel, Jungwoo Oh, G. Bersuker, C. Hobbs, P. D. Kirsch, S. Oktyabrsky	2012	14
8	Plasma doping of silicon fin structures Susan B. Felch, C. Hobbs, Joel Barnett, Tyler Parker, О.Ю. Фетисова, Martin Rodgers, Stephen Earl Bennett, Frank Torregrosa, 季銘陶, Laurent Roux	2011	8
9	Enhanced performance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node Kang Min Ok, Chadwin D. Young, W.Y. Loh, T. Ngai, S. Lian, Jungwoo Oh, Martin Rodgers, Stephen Earl Bennett, Renita Azzahra, Kunito Ohkubo, Shaohui Lin, Kerem Akarvardar, Casey Smith, C. Hobbs, P. D. Kirsch, R. Jammy	2010	8
10	High Mobility SiGe Channel NonPlanar Devices ECS Transactions ·C. Hobbs, Casey Smith, Hemant Adhikari, Shota Iseki, Injo Ok, Kerem Akarvardar, Se‐Hoon Lee, 健太梅鶯, Chadwin D. Young, Sana Tehseen, Prashant Majhi, Raj Jammy	2010	5
11	Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI Kang Min Ok, Kerem Akarvardar, Shota Iseki, Eliana Piccoli Zordan, Chadwin D. Young, Ihamuddin Ihamuddin, Martin Rodgers, Stephen Earl Bennett, Renita Azzahra, Kunito Ohkubo, J. Yum, Jean Baptista von Schweitzer, C. Hobbs, P. D. Kirsch, P. Majhi, R. Jammy	2010	15
12	Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node Casey Smith, Hemant Adhikari, Seng Hua Lee, 健太梅鶯, Songlin Gu, Chadwin D. Young, John Creer, Sana Tehseen, C. Hobbs, P. Majhi, P. D. Kirsch, R. Jammy	2009	9
13	Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterization M. Rafik, X. Garros, G. Ribes, G. Ghibaudo, C. Hobbs, A. Zauner, Markus Müller, V. Huard, Katsuhiro Sotoyama	2007	15
14	Process damages in HfO/sub 2/TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals X. Garros, G. Reimbold, O. Louveau, P. Holliger, C. Hobbs, C. Leroux, Loan Pham-Nguyen, F. Martín, F. Boulanger	2006	2
15	Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water Applied Surface Science ·P. Holliger, C. Hobbs, D. Jalabert, F. Martín, F. Pierre, G. Reimbold, P. Rivallin	2006	1
16	Atomic Vapour Deposition (AVD™) Process for High Performance HfO₂2 Dielectric Layers MRS Proceedings ·Martin Grolms, 井上雄一, S. Blonkowski, S. Lhostis, S. Zoll, Y. Morand, Rafael fl. 1937, B. Guillaumot, C. Hobbs, N. Rochat, G. Rolland, O. Renault, X. Garros, M. Cassé, Jérôme Mitard, P. Lehnen, M.L. O'Connell, J. Lindner, M. Schumacher	2004	5
17	Compatibility of silicon gates with hafnium-based gate dielectrics Microelectronic Engineering ·D. C. Gilmer, R. I. Hegde, John P. Worgan, James A. Smith, Laurynas Šedvydis, R. Garcia, V. Dhandapani, Dina H. Triyoso, D. Roan, Alexander Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L.B. La, S. Samavedam, B. Taylor, H.‐H. Tseng, Philip J. Tobin	2003	21
18	Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films Applied Physics Letters ·Chunli Liu, Z. X. Jiang, R. I. Hegde, 小福王, Frederick JA Beek, D. C. Gilmer, C. Hobbs, Philip J. Tobin, Shi-Feng Lu	2002	15
19	Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. C. Gilmer, C. Hobbs, R. I. Hegde, L.B. La, Érick Soares dos Reis, J. Conner, 高廣古澤, L. Prabhu, S. Bagchi, Philip J. Tobin	2000	15
20	Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation MRS Proceedings ·C. Hobbs, R. I. Hegde, B. Maiti, Arik Messermann, L.B. La, K. Reid, Wang Zuo-h, Sumiyo Tanigawa, J. Conner, V. Kaushik, L. Prabhu, Assaf Y. Anderson, S. Bagchi, Kimberley Collette, Philip J. Tobin	1999	1

About C. Hobbs

C. Hobbs is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 46 papers that have together received 826 indexed citations. Recurring topics across this work include Semiconductor materials and devices (43 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Electronic and Structural Properties of Oxides (8 papers), Copper Interconnects and Reliability (4 papers), Semiconductor materials and interfaces (4 papers) and Metal and Thin Film Mechanics (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (781 citations), Materials Chemistry (287 citations), Electronic, Optical and Magnetic Materials (71 citations), Atomic and Molecular Physics, and Optics (118 citations) and Ceramics and Composites (19 citations). C. Hobbs has collaborated with scholars based in United States, France and Germany. Frequent co-authors include R. I. Hegde, Gregory N. Parsons, Dongfang Niu, Tonya M. Klein, I. J. R. Baumvol, W. Li, William S. Epling, D. M. Maher, Philip J. Tobin and L.B. La. Their work appears in journals such as Applied Physics Letters, Journal of The Electrochemical Society, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Solid-State Electronics and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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