J. Conner

883 total citations
24 papers, 625 citations indexed

About

J. Conner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Conner has authored 24 papers receiving a total of 625 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in J. Conner's work include Semiconductor materials and devices (16 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). J. Conner is often cited by papers focused on Semiconductor materials and devices (16 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). J. Conner collaborates with scholars based in United States, Taiwan and South Korea. J. Conner's co-authors include F. J. Walker, R. A. McKee, David E. Zelmon, E. D. Specht, Rishi Raj, V. Kaushik, L. Prabhu, W. Hung, Sue Ann Bidstrup Allen and N. Vijaykrishnan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J. Conner

22 papers receiving 600 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Conner United States 12 515 297 197 76 67 24 625
A. Kalnitsky United States 13 529 1.0× 186 0.6× 112 0.6× 50 0.7× 92 1.4× 47 602
V. Loup France 15 752 1.5× 213 0.7× 228 1.2× 41 0.5× 191 2.9× 57 812
Howard R. Huff United States 19 1.1k 2.2× 347 1.2× 201 1.0× 80 1.1× 109 1.6× 92 1.2k
Shigemitsu Maruno Japan 13 404 0.8× 232 0.8× 209 1.1× 47 0.6× 110 1.6× 53 531
Janko Versluijs Belgium 10 269 0.5× 205 0.7× 180 0.9× 217 2.9× 77 1.1× 40 529
Antonio Rotondaro United States 16 927 1.8× 223 0.8× 150 0.8× 75 1.0× 49 0.7× 54 974
Y. Ohmura Japan 12 414 0.8× 194 0.7× 171 0.9× 27 0.4× 99 1.5× 58 522
C. Vrancken Belgium 19 939 1.8× 195 0.7× 411 2.1× 33 0.4× 118 1.8× 70 1.0k
P. Chang Taiwan 15 751 1.5× 364 1.2× 286 1.5× 172 2.3× 85 1.3× 50 912
Hirohito Watanabe Japan 14 393 0.8× 255 0.9× 112 0.6× 129 1.7× 129 1.9× 44 584

Countries citing papers authored by J. Conner

Since Specialization
Citations

This map shows the geographic impact of J. Conner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Conner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Conner more than expected).

Fields of papers citing papers by J. Conner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Conner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Conner. The network helps show where J. Conner may publish in the future.

Co-authorship network of co-authors of J. Conner

This figure shows the co-authorship network connecting the top 25 collaborators of J. Conner. A scholar is included among the top collaborators of J. Conner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Conner. J. Conner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Han, Myung‐Geun, Peter Fejes, Qianghua Xie, et al.. (2007). Quantitative Analysis of 2-D Electrostatic Potential Distributions in 90-nm Si pMOSFETs Using Off-Axis Electron Holography. IEEE Transactions on Electron Devices. 54(12). 3336–3341. 19 indexed citations
2.
Han, Myung‐Geun, Jing Li, Qianghua Xie, et al.. (2006). Sample Preparation for Precise and Quantitative Electron Holographic Analysis of Semiconductor Devices. Microscopy and Microanalysis. 12(4). 295–301. 17 indexed citations
3.
Thean, A. V-Y., L. Mathew, C. Parker, et al.. (2006). Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors. 1–4. 28 indexed citations
4.
Hung, W., et al.. (2006). Temperature-aware voltage islands architecting in system-on-chip design. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 689–694. 42 indexed citations
5.
Braceras, G., et al.. (2003). A 940 MHz data rate 8 Mb CMOS SRAM. 198–199. 3 indexed citations
6.
Rao, R. A., R. Muralidhar, J. Conner, et al.. (2003). Thermal oxidation of silicon nanocrystals in O2 and NO ambient. Journal of Applied Physics. 93(9). 5637–5642. 28 indexed citations
7.
Vandooren, A., Ana María Miranda Zavala, L. Mathew, et al.. (2003). 50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate. IEEE Transactions on Nanotechnology. 2(4). 324–328. 11 indexed citations
8.
Vandooren, A., L. Mathew, T. White, et al.. (2003). Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions. IEEE Electron Device Letters. 24(5). 342–344. 24 indexed citations
9.
Braceras, G., et al.. (2002). A 350 MHz 3.3 V 4 Mb SRAM fabricated in a 0.3 μm CMOS process. 404–405,. 4 indexed citations
10.
Conner, J., et al.. (2001). Angled Plan View FIB Sample Preparation for Accurate via Sidewall Measurements. Microscopy and Microanalysis. 7(S2). 960–961. 2 indexed citations
11.
Rhodes, Larry F., et al.. (2001). Porous Methylsilsesquioxane for Low-k Dielectric Applications. Electrochemical and Solid-State Letters. 4(11). F25–F25. 53 indexed citations
12.
Gilmer, D. C., C. Hobbs, R. I. Hegde, et al.. (2000). Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1158–1162. 15 indexed citations
13.
Raghaw, S., et al.. (2000). Specific Area Planar and Cross-Sectional Lift-Out Techniques: Procedures and Novel Applications. Proceedings - International Symposium for Testing and Failure Analysis. 30842. 415–421. 4 indexed citations
14.
Yu, Zhiyi, J. Ramdani, J. Curless, et al.. (2000). Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1653–1657. 61 indexed citations
15.
Hobbs, C., R. I. Hegde, B. Maiti, et al.. (1999). Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation. MRS Proceedings. 567. 1 indexed citations
16.
Conner, J., et al.. (1994). In situ study of MgO on GaAs (001) for integrating thin film ferroelectrics with semiconductors. Ferroelectrics. 157(1). 353–358. 1 indexed citations
17.
McKee, R. A., F. J. Walker, J. Conner, & Rishi Raj. (1993). BaSi2 and thin film alkaline earth silicides on silicon. Applied Physics Letters. 63(20). 2818–2820. 106 indexed citations
18.
McKee, R. A., F. J. Walker, J. Conner, E. D. Specht, & David E. Zelmon. (1991). Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon. Applied Physics Letters. 59(7). 782–784. 171 indexed citations
19.
Walker, F. J., J. Conner, & R. A. McKee. (1990). The Epitaxial Growth of Copper on the (111) Surface of Silicon. MRS Proceedings. 187. 5 indexed citations
20.
Cooman, Bruno C. De, et al.. (1986). Imaging of III-V Compound Superlattices by Hrem and Rem. MRS Proceedings. 77. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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