Prashant Majhi

1.7k total citations
94 papers, 1.4k citations indexed

About

Prashant Majhi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Prashant Majhi has authored 94 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 15 papers in Biomedical Engineering. Recurrent topics in Prashant Majhi's work include Semiconductor materials and devices (82 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Semiconductor materials and interfaces (25 papers). Prashant Majhi is often cited by papers focused on Semiconductor materials and devices (82 papers), Advancements in Semiconductor Devices and Circuit Design (63 papers) and Semiconductor materials and interfaces (25 papers). Prashant Majhi collaborates with scholars based in United States, South Korea and United Kingdom. Prashant Majhi's co-authors include Raj Jammy, Jungwoo Oh, Sandwip K. Dey, Diefeng Gu, Hsing‐Huang Tseng, Chang Yong Kang, Kanghoon Jeon, Anupama Bowonder, Pratik Patel and Tsu‐Jae King Liu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Prashant Majhi

93 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Prashant Majhi United States 21 1.3k 357 275 275 77 94 1.4k
Wakana Takeuchi Japan 15 752 0.6× 294 0.8× 541 2.0× 271 1.0× 90 1.2× 87 1.1k
Tsu-Jae King United States 12 1.2k 0.9× 273 0.8× 315 1.1× 154 0.6× 72 0.9× 23 1.3k
Barry O’Sullivan Belgium 15 970 0.7× 188 0.5× 333 1.2× 99 0.4× 63 0.8× 109 1.1k
B.A. Korevaar Netherlands 10 870 0.7× 263 0.7× 637 2.3× 714 2.6× 51 0.7× 24 1.1k
Joleyn Balch United States 6 629 0.5× 233 0.7× 433 1.6× 732 2.7× 60 0.8× 13 870
Xu-Qian Zheng United States 14 452 0.3× 293 0.8× 534 1.9× 290 1.1× 152 2.0× 41 832
D. Z. Singapore 15 564 0.4× 277 0.8× 446 1.6× 67 0.2× 83 1.1× 44 791
Shun-ichiro Ohmi Japan 16 1.1k 0.9× 420 1.2× 411 1.5× 119 0.4× 92 1.2× 145 1.3k
Sarah H. Olsen United Kingdom 20 1.2k 0.9× 203 0.6× 194 0.7× 306 1.1× 54 0.7× 87 1.3k
J. Jadczak Poland 14 603 0.5× 155 0.4× 815 3.0× 102 0.4× 63 0.8× 34 920

Countries citing papers authored by Prashant Majhi

Since Specialization
Citations

This map shows the geographic impact of Prashant Majhi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Prashant Majhi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Prashant Majhi more than expected).

Fields of papers citing papers by Prashant Majhi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Prashant Majhi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Prashant Majhi. The network helps show where Prashant Majhi may publish in the future.

Co-authorship network of co-authors of Prashant Majhi

This figure shows the co-authorship network connecting the top 25 collaborators of Prashant Majhi. A scholar is included among the top collaborators of Prashant Majhi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Prashant Majhi. Prashant Majhi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sivasubramani, P., et al.. (2013). Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(2). 14 indexed citations
2.
Akarvardar, Kerem, Chadwin D. Young, Injo Ok, et al.. (2012). Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities. IEEE Electron Device Letters. 33(3). 351–353. 13 indexed citations
3.
Lee, Se‐Hoon, Prashant Majhi, D. Ferrer, et al.. (2011). Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices. 58(9). 2917–2923. 1 indexed citations
4.
Jeon, Kanghoon, Chang Yong Kang, Jungwoo Oh, et al.. (2011). Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm. Solid-State Electronics. 65-66. 22–27. 13 indexed citations
5.
Loh, Wei-Yip, Kanghoon Jeon, Chang Yong Kang, et al.. (2010). Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> &#x003E;100 &#x00B5;A/&#x00B5;m. 162–165. 10 indexed citations
6.
Tseng, Hsing‐Huang, Paul Kirsch, G. Bersuker, et al.. (2009). The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper). Microelectronic Engineering. 86(7-9). 1722–1727. 17 indexed citations
7.
Oh, Jungwoo, Prashant Majhi, Chang Yong Kang, et al.. (2009). High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-k Dielectric and Metal Gate. Japanese Journal of Applied Physics. 48(4S). 04C055–04C055. 3 indexed citations
8.
Choi, Chel‐Jong, Jungwoo Oh, Ga‐Won Lee, et al.. (2009). Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation. Electrochemical and Solid-State Letters. 12(11). H402–H402. 8 indexed citations
9.
Kang, Min Ho, et al.. (2009). Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si Substrate. Journal of the Korean Physical Society. 55(1). 221–226. 3 indexed citations
10.
Adhikari, Hemant, H. R. Harris, Casey Smith, et al.. (2009). High mobility SiGe shell-Si core omega gate pFETS. 136–138. 2 indexed citations
11.
Padovani, Andrea, Luca Larcher, Paolo Pavan, et al.. (2008). Statistical Modeling of Leakage Currents Through SiO<inf>2</inf>/High-&#x03BA; Dielectrics Stacks for Non-Volatile Memory Applications. IRIS UNIMORE (University of Modena and Reggio Emilia). 616–620. 25 indexed citations
12.
Bowonder, Anupama, Pratik Patel, Kanghoon Jeon, et al.. (2008). Low-voltage green transistor using ultra shallow junction and hetero-tunneling. 93–96. 29 indexed citations
13.
Olsen, Sarah H., Olayiwola Alatise, S. Bull, et al.. (2008). Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing. 11(5-6). 271–278. 7 indexed citations
14.
Ok, Injo, Feng Zhu, Soyeun Park, et al.. (2008). High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer. Applied Physics Letters. 93(13). 6 indexed citations
15.
Majhi, Prashant, et al.. (2007). CMOS Scaling Beyond High-k and Metal Gates. ECS Meeting Abstracts. MA2007-02(25). 1312–1312. 1 indexed citations
16.
Hussain, Muhammad M., Ji‐Woon Yang, Paul Kirsch, et al.. (2007). Dual work function high-k/Metal Gate CMOS FinFETs. 46. 207–209. 5 indexed citations
17.
Harris, H. R., Chadwin D. Young, Husam N. Alshareef, et al.. (2006). On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics. IEEE Electron Device Letters. 27(12). 984–987. 28 indexed citations
18.
Zhang, Zhibo, S. C. Song, C. Huffman, et al.. (2005). Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process. Electrochemical and Solid-State Letters. 8(10). G271–G271. 32 indexed citations
19.
Najdoski, Metodija, Prashant Majhi, & Ivan Grozdanov. (2001). A simple chemical method for preparation of hydroxyapatite coatings on Ti6Al4V substrate. Journal of Materials Science Materials in Medicine. 12(6). 479–483. 13 indexed citations
20.
Majhi, Prashant, et al.. (1998). ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing. Integrated ferroelectrics. 21(1-4). 305–318. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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