Philip J. Tobin

3.9k citations

98 papers · 3.1k indexed · h-index 31

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 90
- Semiconductor materials and devices 86
- Advancements in Semiconductor Devices and Circuit Design 44
- Integrated Circuits and Semiconductor Failure Analysis 29
- Ferroelectric and Negative Capacitance Devices 20
Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 8

Co-authors: Rama I. Hegde B. E. White Dina H. Triyoso R. I. Hegde Sergio A. Ajuria S. Samavedam M. W. Stoker B. Maiti
Journals: Applied Physics Letters (13 papers)Journal of The Electrochemical Society (11 papers)IEEE Transactions on Electron Devices (9 papers)IEEE Electron Device Letters (8 papers)Journal of Applied Physics (6 papers)
Partner nations: United States Finland Taiwan

In The Last Decade

Philip J. Tobin

96 papers receiving 2.9k citations

Peers

Countries citing papers authored by Philip J. Tobin

Since Specialization

Citations

This map shows the geographic impact of Philip J. Tobin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philip J. Tobin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philip J. Tobin more than expected).

Fields of papers citing papers by Philip J. Tobin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philip J. Tobin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philip J. Tobin. The network helps show where Philip J. Tobin may publish in the future.

Co-authors

The 25 scholars most cited alongside Philip J. Tobin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Philip J. Tobin Line = papers co-authored together Philip J. Tobin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A low-frequency noise model for advanced gate-stack MOSFETs Microelectronics Reliability ·Zeynep Çelik‐Butler, Siva Prasad Devireddy, Hsing‐Huang Tseng, Philip J. Tobin, Ania Zlotnicka	2009	12
2	Impact of Zr addition on properties of atomic layer deposited HfO2 Applied Physics Letters ·Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer, D. Roan, Philip J. Tobin, S. Samavedam, B. E. White, R. Gregory, X.-D. Wang	2006	76
3	Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer Applied Physics Letters ·Dina H. Triyoso, Philip J. Tobin, B. E. White, R. Gregory, X. D. Wang	2006	50
4	Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso, H. Li, R. I. Hegde, Zhiyi Yu, Karen Moore, Jennifer E. Grant, B. E. White, Philip J. Tobin	2005	11
5	Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition Journal of Applied Physics ·Dina H. Triyoso, R. I. Hegde, Stefan Zollner, Michael Ramon, S. Kalpat, R. Gregory, X.-D. Wang, Jian Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B. E. White, Philip J. Tobin	2005	72
6	Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso, R. I. Hegde, J. M. Grant, J. K. Schaeffer, D. Roan, B. E. White, Philip J. Tobin	2005	39
7	Low-Frequency Noise in Submicrometer MOSFETs With HfO<tex>$_2$</tex>, HfO<tex>$_2/hbox Al_2hbox O_3$</tex>and HfAlO<tex>$_x$</tex>Gate Stacks IEEE Transactions on Electron Devices ·Bigang Min, Siva Prasad Devireddy, (unknown), Fang Wang, A. Zlotnicka, Hsin Tseng, Philip J. Tobin	2004	54
8	Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films Chemistry of Materials ·Kaupo Kukli, Mikko Ritala, Tero Pilvi, Timo Sajavaara, Markku Leskelä, Anthony C. Jones, Helen C. Aspinall, D. C. Gilmer, Philip J. Tobin	2004	43
9	Fermi level pinning at the polySi/metal oxide interface Chris Hobbs, L.M. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, Jennifer E. Grant, L. Dip, Dina H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H.‐H. Tseng, Bruce White, Philip J. Tobin	2004	74
10	Crystallization in hafnia‐ and zirconia‐based systems physica status solidi (b) ·Sergey V. Ushakov, Alexandra Navrotsky, Yingju Yang, Susanne Stemmer, Kaupo Kukli, Mikko Ritala, Markku Leskelä, Peter Fejes, Alexander A. Demkov, C. Wang, B.Y. Nguyen, Dina H. Triyoso, Philip J. Tobin	2004	138
11	Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO 2 and HfO 2 in Contact with Si and SiO_2 APS March Meeting Abstracts ·Maciej Gutowski, John E. Jaffe, Chunli Liu, M. W. Stoker, Rama I. Hegde, S. Raghaw, Philip J. Tobin	2002	2
12	PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology B. Maiti, Philip J. Tobin, Chris Hobbs, R. I. Hegde, Fanghao Huang, David L. O'Meara, D. Jovanovic, M. Mendicino, J. Chen, Daniel Connelly, O. Adetutu, J. Mogab, J. Candelaria, L.B. La	2002	13
13	Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. C. Gilmer, C. Hobbs, R. I. Hegde, L.B. La, O. Adetutu, J. Conner, Mike Tiner, L. Prabhu, S. Bagchi, Philip J. Tobin	2000	15
14	Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation MRS Proceedings ·C. Hobbs, R. I. Hegde, B. Maiti, R. Nagabushnam, L.B. La, K. Reid, A. Dip, L. Grove, J. Conner, V. Kaushik, L. Prabhu, Assaf Y. Anderson, S. Bagchi, J. Mendonca, Philip J. Tobin	1999	1
15	Effect of physiological conditions on the autolysis ofStaphylococcus aureus strains Antonie van Leeuwenhoek ·Philip J. Tobin, Nagraj Mani, Radheshyam K. Jayaswal	1994	16
16	Uniformity of the N 2 O Furnace Oxynitride Process for the Formation of Thin Tunnel Dielectrics Journal of The Electrochemical Society ·Yoshio Okada, Philip J. Tobin, K. Reid, Rama I. Hegde, Sergio A. Ajuria	1994	2
17	Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N/sub 2/O oxynitridation IEEE Electron Device Letters ·Y.-S. Kim, Y Okada, Ko-Min Chang, Philip J. Tobin, Bob Morton, H. Choe, Morris B. Bowers, C. Kuo, D. Chrudimsky, Sergio A. Ajuria, J.R. Yeargain	1993	11
18	Thin film properties of low-pressure chemical vapor deposition TiN barrier for ultra-large-scale integration applications Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Rama I. Hegde, R. Fiordalice, E. Travis, Philip J. Tobin	1993	69
19	Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen Applied Physics Letters ·Yoshio Okada, Philip J. Tobin, Rama I. Hegde, Jimmy C. Liao, Peter Rushbrook	1992	29
20	The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation IEEE Transactions on Electron Devices ·Hsin Tseng, Philip J. Tobin, F.K. Baker, J.R. Pfiester, Katharine Evans, P. Fejes	1992	27

About Philip J. Tobin

Philip J. Tobin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 98 papers that have together received 3.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (86 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Ferroelectric and Negative Capacitance Devices (20 papers), Metal and Thin Film Mechanics (11 papers), Electronic and Structural Properties of Oxides (10 papers), Copper Interconnects and Reliability (9 papers) and GaN-based semiconductor devices and materials (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.8k citations), Materials Chemistry (1.2k citations), Electronic, Optical and Magnetic Materials (305 citations), Ceramics and Composites (78 citations) and Atomic and Molecular Physics, and Optics (334 citations). Philip J. Tobin has collaborated with scholars based in United States, Finland and Taiwan. Frequent co-authors include Rama I. Hegde, B. E. White, Dina H. Triyoso, R. I. Hegde, Sergio A. Ajuria, S. Samavedam, M. W. Stoker, B. Maiti, Chunli Liu and S. Raghaw. Their work appears in journals such as Applied Physics Letters, Journal of The Electrochemical Society, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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